SSA34 [VISHAY]

High-Current Density Surface Mount Schottky Rectifier; 高电流密度表面贴装肖特基整流器
SSA34
型号: SSA34
厂家: VISHAY    VISHAY
描述:

High-Current Density Surface Mount Schottky Rectifier
高电流密度表面贴装肖特基整流器

整流二极管
文件: 总2页 (文件大小:58K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SSA33L and SSA34  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
High-Current Density Surface Mount Schottky Rectifier  
Reverse Voltage 30 & 40V  
Forward Current 3.0A  
DO-214AC (SMA)  
Cathode Band  
0.065 (1.65)  
0.049 (1.25)  
Mounting Pad Layout  
0.110 (2.79)  
0.100 (2.54)  
0.066 MIN.  
(1.68 MIN.)  
0.074 MAX.  
(1.88 MAX.)  
0.177 (4.50)  
0.157 (3.99)  
0.012 (0.305)  
0.006 (0.152)  
0.060 MIN.  
(1.52 MIN.)  
0.208  
(5.28) REF  
0.090 (2.29)  
0.078 (1.98)  
Dimensions in inches  
and (millimeters)  
0.130 (3.30)  
0.106 (2.70)  
0.008 (0.2)  
0.060 (1.52)  
0.030 (0.76)  
0 (0)  
0.208 (5.28)  
0.194 (4.93)  
Features  
• Low power loss, high efficiency  
• Low profile surface mount package  
• Built-in strain relief  
• For use in low voltage high frequency inverters, free  
wheeling, and polarity protection applications  
• Guardring for overvoltage protection  
Mechanical Data  
Case: JEDEC DO-214AC molded plastic body  
Terminals: Solder plated, solderable per  
MIL-STD750, Method 2026  
High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
Polarity: Color band denotes cathode end  
Weight: 0.002 ounce, 0.064 gram  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
SSA33L  
33L  
30  
SSA34  
S34  
40  
Unit  
V
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
Maximum DC blocking voltage  
VRRM  
VRMS  
VDC  
V
21  
28  
V
30  
40  
V
Maximum average forward rectified current  
IF(AV)  
IFSM  
3.0  
75  
A
A
at TL (See Fig. 1)  
Peak forward surge current 8.3ms single half  
sine-wave superimposed on rated load (JEDEC Method)  
RΘJA  
RΘJL  
110  
28  
Typical thermal resistance (2)  
°C/W  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10,000  
V/µs  
°C  
-65 to +150  
-65 to +150  
TSTG  
°C  
Electrical Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Typ.  
Max.  
Typ.  
Max.  
Unit  
Maximum instantaneous  
0.43  
0.34  
0.45  
0.38  
0.46  
0.38  
0.49  
0.42  
V
TJ=25°C  
VF  
forward voltage at 3.0A(1)  
TJ=125°C  
Maximum DC reverse current  
at rated DC blocking voltage (1)  
TJ=25°C  
TJ=125°C  
20  
0.5  
35  
17  
0.2  
30  
IR  
mA  
Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle  
(2) Aluminum substrate mounted  
Document Number 88883  
16-Jun-04  
www.vishay.com  
1
SSA33L and SSA34  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig. 2 – Maximum Non-Repetitive  
Peak Forward Surge Current  
Fig. 1 – Forward Current  
Derating Curve  
3.5  
80  
60  
40  
3.0  
2.5  
2.0  
1.5  
1.0  
20  
0
0.5  
SSA33L  
SSA34  
0
0
0
1
25  
75  
100  
125  
150  
50  
1
10  
100  
Lead Temperature (°C)  
Number of Cycles at 60 HZ  
Fig. 3 – Typical Instantaneous  
Forward Characteristics  
Fig. 4 – Typical Reverse  
Characteristics  
100  
10  
100  
10  
TJ = 150°C  
TJ = 150°C  
TJ = 125°C  
1
1
0.1  
TJ = 25°C  
0.1  
SSA33L  
SSA34  
0.01  
0.001  
TJ = 25°C  
SSA33L  
SSA34  
TJ = 125°C  
0.01  
0
20  
40  
60  
80  
100  
0.2  
0.4  
0.6  
0.8  
1.0  
Instantaneous Forward Voltage (V)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 5 – Typical Junction  
Capacitance  
1000  
TJ = 25°C  
f = 1.0 MHZ  
Vsig = 50mVp-p  
100  
SSA33L  
SSA34  
10  
10  
100  
Reverse Voltage (V)  
www.vishay.com  
2
Document Number 88883  
16-Jun-04  

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