SST111-T1 [VISHAY]
Transistor;
| 型号： | SST111-T1 |
| 厂家： | 
VISHAY |
| 描述： | Transistor |
| 文件： | 总6页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
J/SST111 Series
Vishay Siliconix
N-Channel JFETs
J111 SST111
J112 SST112
J113 SST113
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max (W)
ID(off) Typ (pA)
tON Typ (ns)
–3 to –10
–1 to –5
v–3
30
50
5
5
5
4
4
4
J/SST111
J/SST112
J/SST113
100
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 111 < 30 W
D Fast Switching—tON: 4 ns
D Low Leakage: 5 pA
D Low Error Voltage
D Analog Switches
D Choppers
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
D Low Capacitance: 3 pF
D Low Insertion Loss
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
TO-226AA (TO-92)
TO-236 (SOT-23)
1
D
S
D
S
1
2
3
G
2
G
3
Top View
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
Top View
J111
J112
J113
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
a
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V
Power Dissipation
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1
Lead Temperature ( / ” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C
16
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Notes
a. Derate 2.8 mW/_C above 25_C
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-1
J/SST111 Series
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
J/SST112
J/SST113
J/SST111
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= –1 mA , V = 0 V
–55
–35
–35
–35
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
–10
–1
–1
–5
–1
–3
–1
V
= 5 V, I = 1 mA
–3
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
20
5
2
mA
DSS
DS
GS
V
= –15 V, V = 0 V
–0.005
–3
GS
DS
Gate Reverse Current
Gate Operating Current
I
nA
pA
GSS
T
A
= 125_C
I
G
V
V
= 15 V, I = 10 mA
–5
DG
D
= 5 V, V = –10 V
0.005
3
1
1
1
DS
GS
Drain Cutoff Current
I
nA
D(off)
T
A
= 125_C
Drain-Source On-Resistance
Gate-Source Forward Voltage
r
V
= 0 V, V = 0.1 V
30
50
100
W
DS(on)
GS
DS
V
I
G
= 1 mA , V = 0 V
0.7
V
GS(F)
DS
Dynamic
Common-Source Forward
Transconductance
g
6
mS
mS
W
fs
V
= 20 V, I = 1 mA
D
f = 1 kHz
DS
Common-Source
Output Conductance
g
os
25
V
= 0 V, I = 0 mA
D
GS
Drain-Source On-Resistance
r
30
12
5
50
12
5
100
12
5
ds(on)
f = 1 kHz
Common-Source
Input Capacitance
C
iss
7
3
3
V
= 0 V, V = -10 V
DS
GS
pF
f = 1 MHz
Common-Source Reverse Transfer
Capacitance
C
rss
Equivalent Input
Noise Voltage
V
= 10 V, I = 1 mA
D
f = 1 kHz
nV⁄
√Hz
DG
e
n
Switching
t
2
2
d(on)
Turn-On Time
t
r
V
= 10 V, V
= 0 V
DD
GS(H)
ns
See Switching Circuit
t
6
d(off)
Turn-Off Time
t
f
15
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NCB
b. Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-2
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
100
80
100
80
200
160
r
DS @ ID = 1 mA, VGS = 0
DSS @ VDS = 20 V, VGS = 0
T
A
= 25° C
I
IDSS
VGS(off) = –2 V
rDS
60
40
120
80
60
40
–4 V
–8 V
20
0
40
0
20
0
0
–2
–4
–6
–8
–10
1
10
100
V
GS(off) – Gate-Source Cutoff Voltage (V)
ID – Drain Current (mA)
Turn-On Switching
On-Resistance vs. Temperature
5
4
200
160
t approximately independent of ID
r
VDD = 5 V, RG = 50 Ω
GS(L) = –10 V
I
r
= 1 mA
changes X 0.7%/_C
D
DS
V
t
r
120
80
40
0
V
= –2 V
3
2
1
0
GS(off)
t
@
d(on)
I
D = 12 mA
–4 V
–8 V
t
@
d(on)
I
D = 3 mA
0
–10
–55 –35 –15
5
25 45
65
85 105 125
–2
–4
–6
–8
T
A
– Temperature ( _C)
VGS(off) – Gate-Source Cutoff Voltage (V)
Turn-Off Switching
Capacitance vs. Gate-Source Voltage
30
30
t
independent of device VGS(off)
d(off)
f = 1 MHz
VDD = 5 V, VGS(L) = –10 V
24
18
12
6
24
18
12
6
t @
f
V
= –2 V
GS(off)
t
d(off)
C
iss
@ VDS = 0 V
t @
f
GS(off) = –8 V
C
rss
@ VDS = 0 V
V
0
0
0
2
4
6
8
10
0
–4
–8
–12
–16
–20
ID – Drain Current (mA)
VGS – Gate-Source Voltage (V)
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-3
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
Noise Voltage vs. Frequency
100
10
1
50
500
g
fs
and g @ VDS = 20 V
os
VDS = 10 V
V
GS = 0 V, f = 1 kHz
40
g
fs
g
os
30
20
10
250
ID = 1 mA
ID = 10 mA
0
0
0
–2
–4
–6
–8
–10
10
100
1 k
10 k
100 k
f – Frequency (Hz)
VGS(off) – Gate-Source Cutoff Voltage (V)
Gate Leakage Current
Common-Gate Input Admittance
10 nA
1 nA
100
10
IGSS @ 125_C
VDG = 10 V
D = 10 mA
I
T
ID = 10 mA
= 25_C
g
ig
A
T
A
= 125_C
1 mA
100 pA
10 pA
1 pA
b
ig
1 mA
10 mA
IGSS @ 25_C
1
T
A
= 25_C
0.1 pA
0.1
0
6
12
18
24
30
100
200
500
1000
VDG – Drain-Gate Voltage (V)
f – Frequency (MHz)
Common-Gate Forward Admittance
Common-Gate Reverse Admittance
100
10
VDG = 10 V
D = 10 mA
VDG = 10 V
ID = 10 mA
I
T
A
= 25_C
T
A
= 25_C
–g
fg
b
fg
–b
rg
1.0
10
1
g
fg
+g
rg
–g
rg
0.1
0.01
0.1
100
200
500
1000
100
200
500
1000
f – Frequency (MHz)
f – Frequency (MHz)
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-4
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Gate Output Admittance
Output Characteristics
100
80
100
10
V
I
T
A
= 10 V
DG
VGS(off) = –4 V
D = 10 mA
= 25_C
b
og
VGS = 0 V
60
40
20
0
–0.5
–1.0
g
og
1
–1.5
–2.0
–2.5
0.1
100
200
500
1000
0
10
2
4
6
8
f – Frequency (MHz)
VDS – Drain-Source Voltage (V)
Output Characteristics
Transfer Characteristics
40
32
100
80
VGS(off) = –4 V
VDS = 20 V
VGS(off) = –4 V
T
A
= –55_C
VGS = 0 V
24
16
8
–0.5
–1.0
60
40
20
0
25_C
–1.5
–2.0
–2.5
–3.0
125_C
–1
0
0
1.0
0
–5
0.2
0.4
0.6
0.8
–2
–3
–4
V
DS – Drain-Source Voltage (V)
V
GS – Gate-Source Voltage (V)
VDD
SWITCHING TIME TEST CIRCUIT
J/SST111
J/SST112
J/SST113
R
L
V
–12 V
800 W
12 mA
–7 V
1600 W
6 mA
–5 V
3200 W
3 mA
GS(L)
OUT
R *
L
VGS(H)
VGS(L)
I
D(on)
*Non-inductive
1 kW
51 W
51 W
INPUT PULSE
SAMPLING SCOPE
VGS
Scope
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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