SST406-E3 [VISHAY]
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, LEAD FREE, SOIC-8;
| 型号： | SST406-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, LEAD FREE, SOIC-8 |
| 文件： | 总6页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SST/U401 Series
Vishay Siliconix
Monolithic N-Channel JFET Duals
SST404
SST406
U401
U404
U406
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IG Typ (pA)
ꢀ
V
–
V
ꢀ
M
a
x
(
m
V
)
G
S
1
G
S
2
U401
–0.5 to –2.5
–0.5 to –2.5
–0.5 to –2.5
–40
–40
–40
1
1
1
–2
–2
–2
5
SST/U404
SST/U406
15
40
FEATURES
BENEFITS
APPLICATIONS
D Monolithic Design
D High Slew Rate
D Tight Differential Match vs. Current
D Wideband Differential Amps
D Improved Op Amp Speed, Settling Time Accuracy D High-Speed,Temp-Compensated,
Single-Ended Input Amps
D Low Offset/Drift Voltage
D Low Gate Leakage: 2 pA
D Low Noise
D Minimum Input Error/Trimming Requirement
D High-Speed Comparators
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Impedance Converters
D High CMRR: 102 dB
D Minimum Error with Large Input Signal
DESCRIPTION
The SST/U401 series of high-performance monolithic dual
JFETs features extremely low noise, tight offset voltage and
low drift over temperature specifications, and is targeted for
use in a wide range of precision instrumentation applications.
This series has a wide selection of offset and drift
specifications with the U401 featuring a 5-mV offset and
10-mV/_C drift.
with full military processing (see Military Information). The SST
series SO-8 package provides ease of manufacturing, and the
symmetrical pinout prevents improper orientation. The SO-8
package is available with tape-and-reel options for
compatibility with automatic assembly methods (see
Packaging Information).
For similar high-gain products in TO-78 packaging, see the
2N5911/5912 data sheet.
The U series, hermetically sealed TO-71 package is available
TO-71
Narrow Body SOIC
S
G
2
1
1
3
6
4
S
D
G
NC
1
2
3
4
8
7
6
5
1
1
1
G
2
D
1
D
2
2
5
D
2
NC
S
2
G
1
S
2
Top View
SST404, SST406
Top View
U401, U404, U406
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
a
Power Dissipation :
Per Side . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
b
Total . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Notes
Storage Temperature :
U Prefix . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
a. Derate 2.4 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
SST Prefix . . . . . . . . . . . . . . . . . . . –55 to 150_C
For applications information see AN106.
Document Number: 70247
S-04031—Rev. F, 04-Jun-01
www.vishay.com
8-1
SST/U401 Series
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
SST/U404
U401
SST/U406
Parameter
Static
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
V
I
G
= –1 mA, V = 0 V
–58
–40
–40
–40
(BR)GSS
DS
Gate-Source
Breakdown Voltage
V
I
G
= "1 mA, V = 0 V, V = 0 V
"45
"30
"30
"30
(BR)G1 – G2
DS
GS
V
Gate-Source
Cutoff Voltage
V
V
= 15 V, I = 1 nA
–1.5
–0.5
–2.5
–0.5
–2.5
–0.5
–2.5
GS(off)
DS
D
Saturation
Drain Current
I
V
= 10 V, V = 0 V
3.5
0.5
10
0.5
10
0.5
10
mA
DSS
DS
GS
b
V
= –30 V, V = 0 V
–2
–1
–25
–25
–25
pA
nA
pA
nA
GS
DS
Gate Reverse Current
I
GSS
T
= 125_C
A
V
= 15 V, I = 200 mA
–2
–15
–10
–15
–10
–15
–10
DG
D
Gate Operating
Current
I
G
T
A
= 125_C
–0.8
Drain-Source
On-Resistance
r
V
= 0 V, I = 0.1 mA
250
–1
W
DS(on)
GS
D
Gate-Source Voltage
V
V
= 15 V, I = 200 mA
–2.3
–2.3
–2.3
GS
DG
D
V
Gate-Source
Forward Voltage
V
I
G
= 1 mA , V = 0 V
DS
0.7
GS(F)
Dynamic
Common-Source
Forward
Transconductance
g
1.5
1.3
4
1
2
2
2
7
1
2
2
2
7
1
2
2
2
7
mS
mS
fs
V
= 15 V, I = 200 mA
f = 1 kHz
DS
D
Common-Source
Output Conductance
g
os
Common-Source
Forward
Transconductance
g
fs
mS
mS
V
= 10 V, V = 0 V
DS
GS
f = 1 kHz
Common-Source
Output Conductance
g
os
5
4
30
8
30
8
30
8
Common-Source
Input Capacitance
C
iss
V
= 15 V, I = 200 mA
DS
D
pF
Common-Source
Reverse Transfer
Capacitance
f = 1 MHz
C
rss
1.5
10
3
3
3
Equivalent Input
Noise Voltage
V
= 15 V, I = 200 mA
nV⁄
√Hz
DS
D
e
20
20
20
n
f = 10 Hz
Matching
Differential
Gate-Source Voltage
|
|
GS2
V
– V
V
= 10 V, I = 200 mA
5
15
25
40
80
mV
DG
D
GS1
SST404
20
40
Gate-Source Voltage Differ-
ential Change
with Temperature
V
= 10 V
DG
|
|
D V
– V
GS2
DT
GS1
SST406
All U
I
D
= 200 mA
mV/_C
T
A
= –55 to 125C
10
Common Mode
Rejection Ratio
CMRR
V
= 10 to 20 V, I = 200 mA
102
95
95
dB
DG
D
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NNR
b. Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70247
S-04031—Rev. F, 04-Jun-01
www.vishay.com
8-2
SST/U401 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
10
8.0
100 nA
10 nA
1 nA
IDSS @ VDS = 15 V, VGS = 0 V
g
fs
@ VDG = 15 V, VGS = 0 V
f = 1 kHz
IG @ I = 500 mA
D
8
6
4
2
0
6.4
T
= 125_C
A
4.8
3.2
1.6
0
g
fs
I
@ 125_C
GSS
50 mA
100 pA
50 mA
T
A
= 25_C
10 pA
1 pA
IDSS
IGSS @ 25_C
0.1 pA
0
50
0
0
0
–0.5
–1.0
–1.5
–2.0
–2.5
10
20
30
40
VGS(off) – Gate-Source Cutoff Voltage (V)
VDG – Drain-Gate Voltage (V)
Output Characteristics
Output Characteristics
4
7
VGS(off) = –1.5 V
VGS(off) = –2 V
V
= 0 V
GS
V
= 0 V
GS
6
5
3.2
2.4
1.6
0.8
0
–0.2 V
–0.2 V
–0.4 V
–0.6 V
4
–0.4 V
–0.6 V
3
2
–0.8 V
–1.0 V
–1.2 V
–1.2 V
–0.8 V
–1.0 V
1
0
4
8
12
16
20
0
4
8
12
16
20
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
3
4
V
= 0 V
V
= 0 V
GS
GS
VGS(off) = –1.5 V
VGS(off) = –2 V
–0.2 V
–0.4 V
–0.6 V
2.4
1.8
1.2
0.6
0
3.2
2.4
1.6
0.8
0
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–0.8 V
–1.0 V
–1.2 V
–1.2 V
–1.4 V
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Document Number: 70247
S-04031—Rev. F, 04-Jun-01
www.vishay.com
8-3
SST/U401 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Gate-Source Differential Voltage
vs. Drain Current
Transfer Characteristics
100
10
1
5
4
3
2
VGS(off) = –1.5V
VDS = 15 V
VDG = 15 V
T
= –55_C
A
25_C
SST/U404
U401
125_C
1
0
0
–0.4
–0.8
–1.2
–1.6
–2
0.01
0.1
ID – Drain Current (mA)
1
VGS – Gate-Source Voltage (V)
Voltage Differential with Temperature
vs. Drain Current
Common Mode Rejection Ratio
vs. Drain Current
100
130
120
110
100
90
VDG = 15 V
DVDG
DT = 25 to 125_C
CMRR = 20 log
A
DT = –55 to 25_C
D
A
V
V
GS2
–
GS1
SST/U404
U401
DV = 10 – 20 V
DG
10
5 – 10 V
80
1
0.01
0.1
1
0.01
0.1
1
ID – Drain Current (mA)
ID – Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
On-Resistance vs. Drain Current
150
500
400
120
90
VGS(off) = –1.5 V
VGS(off) = –1.0 V
–2.0 V
300
200
–1.5 V
–2.0 V
60
g
R
L
fs
A
+
V
1 ) R g
os
L
Assume VDD = 15 V, V = 5 V
DS
30
0
100
0
10 V
R
+
I
L
D
0.01
0.1
1
0.01
0.1
1
ID – Drain Current (mA)
ID – Drain Current (mA)
Document Number: 70247
S-04031—Rev. F, 04-Jun-01
www.vishay.com
8-4
SST/U401 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
10
10
f = 1 MHz
f = 1 MHz
8
6
8
6
VDS = 0 V
VDS = 0 V
5 V
4
2
0
4
2
0
5 V
15 V
15 V
0
–4
–8
–12
–16
–20
0
–4
–8
–12
–16
–20
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Output Conductance vs. Drain Current
Equivalent Input Noise Voltage vs. Frequency
20
5
4
3
2
1
0
VGS(off) = –1.5 V
VDS = 15 V
f = 1 kHz
VDG = 15 V
16
12
8
ID @ 200 mA
T
A
= –55_C
25_C
4
0
VGS = 0 V
125_C
0.01
0.1
ID – Drain Current (mA)
1
10
100
1 k
10 k
100 k
f – Frequency (Hz)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
4.0
3.2
2.4
1.6
500
30
VGS(off) = –1.5 V
VDS = 15 V
f = 1 kHz
rDS
400
300
200
100
0
24
18
gos
T
A
= –55_C
r
V
@ ID = 100 mA
DS
= 0 V
GS
g
V
@ VDG = 15 V
os
= 0 V
GS
25_C
12
6
f = 1 kHz
125_C
0.8
0
0
0
–0.5
–1.0
–1.5
–2.0
–2.5
0.01
0.1
ID – Drain Current (mA)
1
VGS(off) – Gate-Source Cutoff Voltage (V)
Document Number: 70247
S-04031—Rev. F, 04-Jun-01
www.vishay.com
8-5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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