SST5461-E3 [VISHAY]

Small Signal Field-Effect Transistor, P-Channel, Junction FET;


型号：	SST5461-E3
厂家：	VISHAY
描述：	Small Signal Field-Effect Transistor, P-Channel, Junction FET
文件：	总6页 (文件大小：66K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2N/SST5460 Series

Vishay Siliconix

P-Channel JFETs

2N5460

2N5461

2N5462

SST5460

SST5461

SST5462

PRODUCT SUMMARY

Part Number

V_GS(off)(V)

V_(BR)GSSMin (V)

g_fsMin (mS) I_DSSMin (mA)

2N/SST5460

2N/SST5461

2N/SST5462

0.75 to 6

1 to 7.5

1.8 to 9

1.5

–1

–2

–4

FEATURES

BENEFITS

APPLICATIONS

D High Input Impedance

D Low Signal Loss/System Error

D Low-Current, Low-Voltage Amplifiers

D Very Low Noise

D High System Sensitivity

D High-Side Switching

D High Gain: A_V= 80 @ 20 mA

D Low Capacitance: 1.2 pF Typical

D High-Quality Low-Level Signal

D Ultrahigh Input Impedance

Amplification

Pre-Amplifiers

DESCRIPTION

The 2N/SST5460 series are p-channel JFETs designed to

provide all-around performance in a wide range of amplifier

and analog switch applications.

The 2N series, TO-226AA (TO-92), and SST series, TO-236

(SOT-23), plastic packages provide low cost options, and are

available in tape-and-reel for automated assembly, (see

Packaging Information).

TO-226AA

(TO-92)

TO-236

(SOT-23)

SST5460 (B0)*

SST5461 (B1)*

SST5462 (B2)*

2N5460

2N5461

2N5462

*Marking Code for TO-236

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 mA

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW

Notes

a. Derate 2.8 mW/_C above 25_C

Document Number: 70262

S-04030—Rev. D, 04-Jun-01

www.vishay.com

9-1

2N/SST5460 Series

Vishay Siliconix

SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)

Limits

2N/SST5460

2N/SST5461

2N/SST5462

Parameter

Symbol

Test Conditions

Typ^aMin Max Min Max Min Max Unit

Static

Gate-Source

Breakdown Voltage

= 10 mA , V = 0 V

(BR)GSS

Gate-Source Cutoff Voltage

= –15 V, I = –1 mA

0.75

7.5

1.8

GS(off)

Saturation Drain Current

= –15 V, V = 0 V

–1

–5

–2

–9

–4

–16

DSS

= 20 V, V = 0 V

0.003

0.0003

Gate Reverse Current

GSS

= 100_C

Gate Operating Current

Drain Cutoff Current

= –20 V, I = –0.1 mA

DG D

= –15 V, V = 10 V

–5

D(off)

= –0.1 mA

= –0.2 mA

= –0.4 mA

1.3

0.5

2.3

0.8

4.5

Gate-Source Voltage

= –15 V

3.8

1.5

Gate-Source

Forward Voltage

= –1 mA , V = 0 V

–0.7

GS(F)

Dynamic

Common-Source

Forward Transconductance

1.5

= –15 V, V = 0 V

f = 1 kHz

Common-Source

Output Conductance

4.5

Common-Source

Reverse Transfer

Capacitance

iss

SST

Common-Source

Reverse Transfer

Capacitance

= –15 V, V = 0 V

f = 1 MHz

rss

1.2

SST

1.5

Common-Source

Output Capacitance

oss

115

2.5

115

2.5

115

2.5

Equivalent Input

Noise Voltage

= –15 V, V = 0 V

f = 100 Hz

nV⁄

√Hz

SST

= –15 V, V = 0 V

0.2

Noise Figure

Notes

f = 100 Hz, R = 1 MW

SST

BW = 1 Hz

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

PSCIB

b. Pulse test: PW v300 ms duty cycle v2%.

Document Number: 70262

S-04030—Rev. D, 04-Jun-01

www.vishay.com

9-2

2N/SST5460 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance

vs. Gate-Source Cutoff Voltage

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

–20

–16

–12

–8

1000

800

600

400

200

100

I_DSS

r_DS

2.5

@ V_DS= –15 V, V_GS= 0 V

I_DSS@ V_DS= –15 V, V_GS= 0 V

–4

r_DS@ I_D= –100 mA, V_GS= 0 V

@ V_DS= –15 V, V_GS= 0 V

f = 1 kHz

V_GS(off)– Gate-Source Cutoff Voltage (V)

Output Characteristics

–2

–1.6

–1.2

–0.8

–0.4

–10

–8

–6

–4

–2

V_GS(off)= 1.5 V

V_GS= 0 V

0.2 V

V_GS(off)= 3 V

0.4 V

0.6 V

= 0 V

0.5 V

1.0 V

0.8 V

1.0 V

1.5 V

2.0 V

–4

–8

–12

–16

–20

–4

–8

–12

–16

–20

V_DS– Drain-Source Voltage (V)

Output Characteristics

–2

–1.6

–1.2

–0.8

–0.4

–0.5

–0.4

–0.3

–0.2

–0.1

= 0 V

V_GS(off)= 1.5 V

V_GS= 0 V

V_GS(off)= 3 V

0.4 V

0.5 V

0.6 V

0.8 V

1.0 V

0.2 V

1.5 V

2.0 V

1.0 V

1.2 V

2.5 V

–0.2

–0.4

–0.6

–0.8

–1

–0.2

–0.4

–0.6

–0.8

–1

V_DS– Drain-Source Voltage (V)

Document Number: 70262

S-04030—Rev. D, 04-Jun-01

www.vishay.com

9-3

2N/SST5460 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

Transfer Characteristics

–5

–4

–3

–2

–1

–10

–8

–6

–4

–2

V_GS(off)= 1.5 V

V_DS= –15 V

V_GS(off)= 3 V

V_DS= –15 V

= –55_C

25_C

125_C

0.4

0.8

1.2

1.6

V_GS– Gate-Source Voltage (V)

On-Resistance vs. Drain Current

Gate Leakage Current

10 nA

1 nA

1000

800

600

400

= 25_C

–5 mA

= 125_C

V_GS(off)= 1.5 V

100 pA

–1 mA

I_GSS@ 125_C

3 V

–0.1 mA

10 p A

1 pA

–5 mA

= 25_C

4 V

I_GSS@ 25_C

200

0.1 pA

–0.1

–1

–10

–20

–30

–40

–50

V_DG– Drain-Gate Voltage (V)

I_D– Drain Current (mA)

Transconductance vs. Gate-Source Voltage

V_GS(off)= 1.5 V

V_DS= –15 V

f = 1 kHz

V_GS(off)= 3 V

V_DS= –15 V

f = 1 kHz

= –55_C

25_C

125_C

0.4

0.8

1.2

1.6

_GS– Gate-Source Voltage (V)

Document Number: 70262

S-04030—Rev. D, 04-Jun-01

www.vishay.com

9-4

2N/SST5460 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

Common-Source Forward Transconductance

vs. Drain Current

Circuit Voltage Gain vs. Drain Current

100

V_GS(off)= 3 V

V_GS(off)= 1.5 V

= –55_C

V_GS(off)= 3 V

25_C

125_C

V_DS= –15 V

f = 1 kHz

Assume V = –15 V, V = –5 V

10 V

1 ) R g

0.1

–0.01

–0.1

–1

–0.1

–1

I_D– Drain Current (mA)

–10

I_D– Drain Current (mA)

Common-Source Input Capacitance

vs. Gate-Source Voltage

Common-Source Reverse Feedback Capacitance

vs. Gate-Source Voltage

f = 1 MHz

2.5

–5 V

–15 V

V_GS– Gate-Source Voltage (V)

Equivalent Input Noise Voltage vs. Frequency

Output Conductance vs. Drain Current

100

V_DS= –15 V

V_GS(off)= 3 V

= –55_C

I_D= –0.1 mA

I_D= –1 mA

25_C

125_C

–1

V_DS= –15 V

f = 1 kHz

–0.1

–10

100

1 k

10 k

100 k

f – Frequency (Hz)

I_D– Drain Current (mA)

Document Number: 70262

S-04030—Rev. D, 04-Jun-01

www.vishay.com

9-5

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

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