SST5484 [VISHAY]
N-Channel JFETs; N沟道JFET的
| 型号： | SST5484 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel JFETs |
| 文件： | 总7页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N/SST5484 Series
Vishay Siliconix
N-Channel JFETs
2N5484
2N5485
2N5486
SST5484
SST5485
SST5486
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
2N/SST5484
2N/SST5485
2N/SST5486
–0.3 to –3
–0.5 to –4
–2 to –6
–25
–25
–25
3
3.5
4
1
4
8
FEATURES
BENEFITS
APPLICATIONS
D Excellent High-Frequency Gain:
D Wideband High Gain
D High-Frequency Amplifier/Mixer
D Oscillator
Gps 13 dB (typ) @ 400 MHz – 5485/6
D Very High System Sensitivity
D High Quality of Amplification
D Very Low Noise: 2.5 dB (typ) @
D Sample-and-Hold
400 MHz – 5485/6
D High-Speed Switching Capability
D High Low-Level Signal Amplification
D Very Low Capacitance Switches
D Very Low Distortion
D High AC/DC Switch Off-Isolation
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs
designed to provide high-performance amplification,
especially at high frequencies up to and beyond 400 MHz.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).
TO-236
(SOT-23
)
TO-226AA
(TO-92)
1
D
D
S
1
2
3
G
S
2
3
G
Top View
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
Top View
2N5484
2N5485
2N5486
*Marking Code for TO-236
For applications information see AN102 and AN105.
Document Number: 70246
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-1
2N/SST5484 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR 2N SERIES (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
2N5484
2N5485
2N5486
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= –1 ꢀA , V = 0 V
–35
–25
–25
–25
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
V
= 15 V, I = 10 nA
–0.3
–3
5
–0.5
–4
10
–2
–6
20
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
1
4
8
mA
nA
DSS
DS
GS
V
= –20 V, V = 0 V
–0.002
–0.2
–1
–1
–1
GS
DS
Gate Reverse Current
I
GSS
T
= 100_C
–200
–200
–200
A
c
Gate Operating Current
I
G
V
= 10 V, I = 1 mA
–20
pA
V
DG
D
Gate-Source
Forward Voltage
V
I
G
= 10 mA , V = 0 V
0.8
GS(F)
DS
c
Dynamic
Common-Source
Forward Transconductance
g
3
6
50
5
3.5
7
60
5
4
8
75
5
mS
fs
b
V
= 15 V, V = 0 V
GS
f = 1 kHz
DS
Common-Source
Output Conductance
g
ꢀ
S
os
iss
b
Common-Source
Input Capacitance
C
C
2.2
0.7
1
Common-Source
Reverse Transfer Capacitance
V
V
= 15 V, V = 0 V
GS
f = 1 MHz
DS
DS
1
1
1
pF
rss
Common-Source
Output Capacitance
C
oss
2
2
2
Equivalent Input
= 15 V, V = 0 V
GS
f = 100 Hz
nV⁄
√Hz
e
10
n
c
Noise Voltage
High-Frequency
f = 100 MHz
5.5
5.5
45
2.5
Common-Source
Transconductance
Y
mS
ꢀS
fs(RE)
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
3
3.5
75
Common-Source
Output Conductance
V
V
= 15 V
= 0 V
DS
Y
os(RE)
V
GS
65
100
1
100
1
0.05
0.8
0.1
Common-Source
Input Conductance
Y
mS
is(RE)
V
= 15 V, I = 1 mA
f = 100 MHz
DS
D
20
16
25
Common-Source Power Gain
G
ps
f = 100 MHz
f = 400 MHz
21
13
18
10
30
20
18
10
30
20
= 15 V
= 4 mA
DS
I
D
V
R
= 15 V, V = 0 V
GS
= 1 Mꢁ , f = 1 kHz
DS
0.3
2
2.5
3
2.5
2.5
dB
G
V
= 15 V, I = 1 mA
DS
D
R
G
= 1 kꢁ , f = 100 MHz
Noise Figure
NF
V
= 15 V
= 4 mA
= 1 kꢁ
f = 100 MHz
f = 400 MHz
1
2
4
2
4
DS
I
D
2.5
R
G
Document Number: 70246
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-2
2N/SST5484 Series
Vishay Siliconix
SPECIFICATIONS FOR SST SERIES (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
SST5484
SST5485
SST5486
Parameter
Symbol
Test Conditions
Typb Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= –1 ꢀA , V = 0 V
–35
–25
–25
–25
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
V
= 15 V, I = 10 nA
DS D
–0.3
–3
5
–0.5
–4
10
–2
–6
20
GS(off)
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
DS GS
1
8
mA
nA
4
DSS
V
= –20 V, V = 0 V
–0.002
–0.2
–1
–1
–1
GS
DS
Gate Reverse Current
I
GSS
T
= 100_C
–200
–200
–200
A
c
Gate Operating Current
I
G
V
= 10 V, I = 1 mA
–20
pA
V
DG
D
Gate-Source
Forward Voltage
V
I
G
= 10 mA , V = 0 V
0.8
GS(F)
DS
c
Dynamic
Common-Source
Forward Transconductance
g
fs
3
6
3.5
7
4
8
mS
b
V
= 15 V, V = 0 V
GS
DS
f = 1 kHz
Common-Source
Output Conductance
g
50
60
75
ꢀ
S
os
iss
b
Common-Source
Input Capacitance
C
C
2.2
0.7
Common-Source
Reverse Transfer
Capacitance
V
V
= 15 V, V = 0 V
GS
f = 1 MHz
DS
DS
pF
rss
Common-Source
Output Capacitance
C
oss
1
Equivalent Input
= 15 V, V = 0 V
GS
f = 100 Hz
nV⁄
√Hz
e
10
n
c
Noise Voltage
High-Frequency
f = 100 MHz
5.5
5.5
45
Common-Source
Transconductance
Y
mS
ꢀS
fs
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
Common-Source
Output Conductance
V
V
= 15 V
= 0 V
DS
GS
Y
os
65
0.05
0.8
Common-Source
Input Conductance
Y
mS
is
V
= 15 V, I = 1 mA
DS
D
20
f = 100 MHz
Common-Source
Power Gain
G
ps
f = 100 MHz
f = 400 MHz
21
13
V
= 15 V
= 4 mA
DS
I
D
V
R
= 15 V, V = 0 V
GS
= 1 Mꢁ , f = 1 kHz
DS
0.3
2
dB
G
V
= 15 V, I = 1 mA
DS
D
R
G
= 1 kꢁ , f = 100 MHz
Noise Figure
Notes
NF
V
= 15 V
= 4 mA
= 1 kꢁ
f = 100 MHz
f = 400 MHz
1
DS
I
D
2.5
R
G
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ꢀs duty cycle v3%.
NH
c. This parameter not registered with JEDEC.
Document Number: 70246
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-3
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
10
8
100
80
20
16
500
400
r
DS @ ID = 1 mA, VGS = 0 V
os
g
@ VDS = 10 V, VGS = 0 V
IDSS
f = 1 kHz
rDS
6
4
60
40
g
fs
12
8
300
200
g
os
IDSS @ V = 10 V, VGS = 0 V
DS
2
0
20
0
4
0
100
0
g
fs
@ V = 10 V, VGS = 0 V
DS
f = 1 kHz
0
–2
–4
–6
–8
–10
0
–2
–4
–6
–8
–10
V
GS(off) – Gate-Source Cutoff Voltage (V)
V
GS(off) – Gate-Source Cutoff Voltage (V)
Common-Source Forward
Transconductance vs. Drain Current
Gate Leakage Current
10
8
100 nA
10 nA
I
D
= 5 mA
VGS(off) = –3 V
VDS = 10 V
f = 1 kHz
1 mA
0.1 mA
T
= 125_C
1 nA
100 pA
10 pA
1 pA
A
T
A
= –55_C
125_C
6
4
2
0
IGSS
125_C
@
ID = 5 mA
25_C
1 mA
0.1 mA
T
A
= 25_C
IGSS @ 25_C
0.1 pA
0.1
1
10
0
4
8
12
16
20
VDG – Drain-Gate Voltage (V)
I – Drain Current (mA)
D
Output Characteristics
Output Characteristics
10
8
15
12
VGS(off) = –2 V
VGS(off) = –3 V
VGS = 0 V
V
= 0 V
GS
–0.3 V
–0.2 V
–0.4 V
–0.6 V
6
4
9
6
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–0.8 V
–1.0 V
–1.2 V
2
0
3
0
–1.8 V
–1.4 V
8
0
2
4
6
10
0
2
4
6
8
10
V
DS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Document Number: 70246
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-4
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Transfer Characteristics
Transfer Characteristics
10
8
10
8
VGS(off) = –2 V
VDS = 10 V
V
= –3 V
V
= 10 V
DS
GS(off)
T
A
= –55_C
T
= –55_C
A
25_C
25_C
6
4
6
4
125_C
125_C
2
0
2
0
0
–0.4
–0.8
–1.2
–1.6
–2
0
–0.6
–1.2
–1.8
–2.4
–3
VGS – Gate-Source Voltage (V)
V
– Gate-Source Voltage (V)
GS
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
10
8
10
8
VGS(off) = –2 V
VDS = 10 V
f = 1 kHz
VGS(off) = –3 V
VDS = 10 V
f = 1 kHz
T
= –55_C
A
T
= –55_C
A
6
4
6
4
25_C
25_C
125_C
125_C
2
0
2
0
0
–0.4
–0.8
–1.2
–1.6
–2
0
–0.6
–1.2
–1.8
–2.4
–3
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
300
240
100
80
g
R
L
fs
T
A
= 25_C
A
+
V
1 ) R g
os
L
Assume VDD = 15 V, V = 5 V
DS
10 V
VGS(off) = –2 V
R
+
I
L
D
180
120
60
40
–3 V
V
= –2 V
GS(off)
60
0
20
0
–3 V
0.1
1
10
0.1
1
10
ID – Drain Current (mA)
ID – Drain Current (mA)
Document Number: 70246
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-5
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
4
3
f = 1 MHz
f = 1 MHz
2.4
3
2
1.8
1.2
VDS = 0 V
VDS = 0 V
10 V
10 V
1
0
0.6
0
0
–4
–8
–12
–16
–20
0
–4
–8
–12
–16
–20
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Input Admittance
Forward Admittance
100
10
100
10
T
V
V
= 25_C
T
V
V
= 25_C
A
A
DS = 15 V
GS = 0 V
DS = 15 V
GS = 0 V
Common Source
Common Source
b
is
g
fs
g
is
–b
fs
1
1
0.1
0.1
100
1000
100
200
500
1000
200
500
f – Frequency (MHz)
f – Frequency (MHz)
Reverse Admittance
Output Admittance
10
10
T
V
V
= 25_C
DS = 15 V
GS = 0 V
T
V
V
= 25_C
DS = 15 V
GS = 0 V
A
A
b
os
–b
rs
Common Source
Common Source
1
1
–g
rs
0.1
0.1
g
os
0.01
0.01
100
1000
100
1000
200
500
200
500
f – Frequency (MHz)
f – Frequency (MHz)
Document Number: 70246
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-6
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
20
16
20
16
V
= –3 V
V
= 10 V
DS
GS(off)
V
= –3 V
V
= 10 V
DS
GS(off)
f = 1 kHz
T
A
= –55_C
12
8
12
8
25_C
125_C
I
D
= 5 mA
4
0
4
0
I
D
= I
DSS
10
100
1 k
f – Frequency (Hz)
10 k
100 k
0.1
1
10
I
D
– Drain Current (mA)
Document Number: 70246
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-7
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