ST083S08PFK2PBF [VISHAY]
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC, ROHS COMPLIANT, TO-94, 3 PIN;
| 型号： | ST083S08PFK2PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC, ROHS COMPLIANT, TO-94, 3 PIN |
| 文件： | 总10页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST083SPbF Series
Vishay High Power Products
Inverter Grade Thyristors (Stud Version), 85 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
TO-209AC (TO-94)
TYPICAL APPLICATIONS
• Inverters
PRODUCT SUMMARY
• Choppers
IT(AV)
85 A
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
85
UNITS
A
°C
A
IT(AV)
TC
85
IT(RMS)
135
50 Hz
60 Hz
50 Hz
60 Hz
2450
A
ITSM
2560
A
30
I2t
kA2s
27
V
DRM/VRRM
400 to 1200
10 to 20
- 40 to 125
V
tq
Range
μs
°C
TJ
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAX.
AT TJ = TJ MAX.
mA
VOLTAGE
TYPE NUMBER
REPETITIVE PEAK VOLTAGE
V
CODE
04
400
800
500
900
08
ST083S
30
10
1000
1200
1100
1300
12
Document Number: 94334
Revision: 25-Nov-09
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
ST083SPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 85 A
CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 μs
2540
180° el
180° el
50 Hz
210
200
150
70
120
120
80
330
350
320
220
50
270
210
190
85
1930
810
400
100
50
400 Hz
1190
630
250
50
A
V
1000 Hz
2500 Hz
25
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
50
50
50
VDRM
VDRM
VDRM
50
60
50
85
-
-
-
-
A/μs
°C
60
85
60
85
22/0.15
22/0.15
22/0.15
W/μF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
UNITS
A
85
85
Maximum average on-state current at
case temperature
180° conduction, half sine wave
°C
Maximum RMS on-state current
IT(RMS)
DC at 77 °C case temperature
135
2450
2560
2060
2160
30
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
27
Maximum I2t for fusing
I2t
kA2s
21
100 % VRRM
reapplied
19
Maximum I2√t for fusing
I2√t
VTM
VT(TO)1
VT(TO)2
rt1
t = 0.1 ms to 10 ms, no voltage reapplied
ITM = 300 A, TJ = TJ maximum, tp = 10 ms sine wave pulse
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
300
2.15
1.46
1.52
2.32
2.34
600
1000
kA2√s
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
V
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
mΩ
rt2
IH
TJ = 25 °C, IT > 30 A
mA
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
SWITCHING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
MIN. MAX.
Maximum non-repetitive rate of rise
of turned on current
dI/dt
td
TJ = TJ max., VDRM = Rated VDRM, ITM = 2 x dI/dt
1000
A/μs
TJ = 25 °C, VDM = Rated VDM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 Ω source
Typical delay time
0.80
μs
TJ = TJ maximum, ITM = 100 A,
commutating dI/dt = 10 A/μs
Maximum turn-off time
tq
10
20
VR = 50 V, tp = 200 μs, dV/dt = 200 V/μs
www.vishay.com
2
For technical questions, contact: indmodules@vishay.com
Document Number: 94334
Revision: 25-Nov-09
ST083SPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 85 A
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum, linear to 80 % VDRM
higher value available on request
,
Maximum critical rate of rise of off-state voltage
dV/dt
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
30
mA
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
40
5
TJ = TJ maximum, f = 50 Hz, d% = 50
W
A
Maximum average gate power
PG(AV)
IGM
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
5
+ VGM
- VGM
IGT
TJ = TJ maximum, tp ≤ 5 ms
20
5
V
200
3
mA
V
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
VGT
IGD
20
0.25
mA
V
TJ = TJ maximum, rated VDRM/VRRM applied
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.195
UNITS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
TJ
°C
TStg
RthJC
RthCS
DC operation
K/W
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.08
15.5
(137)
N · m
(lbf · in)
Mounting torque, 10 %
14
(120)
Lubricated threads
Approximate weight
Case style
130
g
See dimensions - link at the end of datasheet
TO-209AC (TO-94)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
120°
90°
0.034
0.041
0.052
0.076
0.126
0.025
0.042
0.056
0.079
0.127
TJ = TJ maximum
K/W
60°
30°
Note
•
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94334
Revision: 25-Nov-09
For technical questions, contact: indmodules@vishay.com
www.vishay.com
3
ST083SPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 85 A
130
130
120
110
ST083S Series
RthJC (DC) = 0.195 K/W
ST083S Series
RthJC (DC) = 0.195 K/W
120
110
Ø
Ø
Conduction period
Conduction angle
100
90
100
90
30°
60°
90°
120°
80
30°
60° 90° 120° 180°
180°
100
DC
120
80
70
0
10 20 30 40 50 60 70 80 90
Average On-State Current (A)
0
20
40
60
80
140
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
180
160
140
120
100
80
180
160
140
120
100
80
180°
120°
90°
60°
30°
RMS limit
Ø
60
60
Conduction angle
40
40
ST083S Series
TJ = 125 °C
20
20
0
0
0
10 20 30 40 50 60 70 80 90
25
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
250
200
150
100
50
250
200
150
100
50
DC
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction period
ST083S Series
TJ = 125 °C
0
0
0
20
40
60
80
100
120
140
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
www.vishay.com
4
For technical questions, contact: indmodules@vishay.com
Document Number: 94334
Revision: 25-Nov-09
ST083SPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 85 A
2200
2000
1800
1600
1400
1200
1000
1
At any rated load condition and with
rated VRRM applied following surge
Steady state value
RthJC = 0.195 K/W
(DC operation)
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
0.1
ST083S Series
ST083S Series
0.01
0.001
1
10
100
0.01
0.1
1
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
2600
160
ITM = 500 A
ITM = 300 A
Maximum non repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained
ST083S Series
TJ = 125 °C
2400
2200
2000
1800
1600
1400
1200
1000
140
120
100
80
ITM = 200 A
ITM = 100 A
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
60
ITM = 50 A
40
ST083S Series
20
0.01
0.1
1
10 20 30 40 50 60 70 80 90 100
Pulse Train Duration (s)
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovered Charge Characteristics
10 000
1000
100
120
ITM = 500 A
ITM = 300 A
110
100
ITM = 200 A
ITM = 100 A
90
80
70
60
50
40
30
20
10
TJ = 25 °C
TJ = 125 °C
ITM = 50 A
ST083S Series
TJ = 125 °C
ST083S Series
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Instantaneous On-State Voltage (V)
10 20 30 40 50 60 70 80 90 100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Document Number: 94334
Revision: 25-Nov-09
For technical questions, contact: indmodules@vishay.com
www.vishay.com
5
ST083SPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 85 A
10 000
10 000
Snubber circuit
Rs = 22 Ω
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
Cs = 0.15 µF
VD = 80 % VDRM
1000
100
10
1000
100
10
100
200
50 Hz
50 Hz
1000
1500
2000
2500
3000
400
1500
1000
500
2000
2500
3000
400
500
100
200
ST083S Series
Sinusoidal pulse
TC = 60 °C
ST083S Series
Sinusoidal pulse
TC = 85 °C
tp
tp
10
100
1000
10 000
10
10
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
10 000
1000
100
10 000
1000
100
Snubber circuit
ST083S Series
Trapezoidal pulse
TC = 85 °C
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
tp
dI/dt = 50 A/µs
500
50 Hz
50 Hz
1500
2500
500
200 100
400
2000
100
1500
1000
200
100
400
1000
ST083S Series
Trapezoidal pulse
TC = 60 °C
3000
2000
tp
2500
100
dI/dt = 50 A/µs
10
10
10
1000
10 000
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
10 000
1000
100
10 000
1000
100
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
ST083S Series
Trapezoidal pulse Rs = 22 Ω
TC = 85 °C
dI/dt = 100 A/µs
Snubber circuit
Cs = 0.15 µF
VD = 80 % VDRM
tp
400
1000
50 Hz
400
50 Hz
500
200
100
1500
2000
500
200 100
1500
1000
2500
2000
ST083S Series
Trapezoidal pulse
TC = 60 °C
3000
2500
100
tp
dI/dt = 100 A/µs
10
10
10
100
1000
10 000
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
www.vishay.com
6
For technical questions, contact: indmodules@vishay.com
Document Number: 94334
Revision: 25-Nov-09
ST083SPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 85 A
10 000
1000
100
10 000
1000
100
ST083S Series
Rectangular pulse
dI/dt = 50 A/µs
20 joules per pulse
tp
20 joules
per pulse
7.5
10
5
3
2
1
4
0.5
2
0.3
0.2
1
0.5
0.3
0.2
0.1
0.1
ST083S Series
Sinusoidal pulse
tp
10
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
(a)
(b)
1
(1)
(2)
(3) (4)
VGD
IGD
Device: ST083S Series
0.1
Frequency limited by PG(AV)
10
0.1
0.001
0.01
1
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Document Number: 94334
Revision: 25-Nov-09
For technical questions, contact: indmodules@vishay.com
www.vishay.com
7
ST083SPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 85 A
ORDERING INFORMATION TABLE
Device code
ST
08
3
S
12
P
F
N
0
PbF
1
2
3
4
5
6
7
8
9
10
1
2
3
4
- Thyristor
- Essential part number
- 3 = Fast turn-off
- S = Compression bonding stud
- Voltage code x 100 = VRRM (see Voltage Ratings table)
5
6
-
P = Stud base 1/2"-20UNF-2A threads
M = Metric M12, contact factory for availability
- Reapplied dV/dt code (for tq test condition)
- tq code
7
8
9
dV/dt - tq combinations available
dV/dt (V/µs)
200
tq (µs)
10
20
FN
FK
-
0 = Eyelet terminals (gate and aux. cathode leads)
1 = Fast-on terminals (gate and aux. cathode leads)
2 = Flag terminals (gate and aux. cathode leads)
up to 800V
tq (µs)
only for
20
FK
1000/1200 V
- PbF = Lead (Pb)-free
10
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95003
www.vishay.com
8
For technical questions, contact: indmodules@vishay.com
Document Number: 94334
Revision: 25-Nov-09
Outline Dimensions
Vishay Semiconductors
TO-209AC (TO-94) for ST083S and ST103S Series
DIMENSIONS in millimeters (inches)
Ceramic housing
2.6 (0.10) MAX.
16.5 (0.65) MAX.
Ø 8.5 (0.33)
Ø 4.3 (0.17)
9.5 (0.37) MIN.
Flexible lead
20 (0.79) MIN.
C.S. 16 mm2
(0.025 s.i.)
C.S. 0.4 mm2
(0.0006 s.i.)
Red silicon rubber
Red cathode
157 (6.18)
170 (6.69)
215 10
(8.46 0.39)
White gate
Red shrink
70 (2.75)
MIN.
White shrink
Ø 22.5 (0.88) MAX.
29 (1.14)
MAX.
12.5 (0.49) MAX.
21 (0.83)
MAX.
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Document Number: 95003
Revision: 30-Sep-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
ST083S08PFL0LPBF
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC
INFINEON
ST083S08PFL0PBF
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC
INFINEON
ST083S08PFL1
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC
INFINEON
ST083S08PFL1LPBF
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC
INFINEON
ST083S08PFL2
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-208AD
INFINEON
ST083S08PFL2L
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-208AD
INFINEON
ST083S08PFL2LPBF
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-208AD
INFINEON
ST083S08PFL2PBF
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-208AD
INFINEON
ST083S08PFM0
Silicon Controlled Rectifier, 135A I(T)RMS, 85000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC, TO-209AC, 3 PIN
INFINEON
ST083S08PFM0L
Silicon Controlled Rectifier, 135A I(T)RMS, 85000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC
INFINEON
ST083S08PFM0LPBF
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC
INFINEON
©2020 ICPDF网 联系我们和版权申明