ST173S10PHH2 [VISHAY]
Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM);
| 型号： | ST173S10PHH2 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM) 栅 栅极 |
| 文件： | 总10页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25181 rev. C 12/96
ST173S SERIES
Stud Version
INVERTER GRADE THYRISTORS
Features
175A
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
TypicalApplications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST173S
175
Units
A
@ TC
85
°C
IT(RMS)
ITSM
275
4680
A
A
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
4900
A
I2t
110
KA2s
KA2s
V
100
VDRM/VRRM
1000 to 1200
15 to 25
- 40 to 125
case style
TO-209AB (TO-93)
t
range
µs
q
TJ
°C
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Document Number: 93667
ST173S Series
Bulletin I25181 rev. C 12/96
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST173S
repetitive peak voltage
V
non-repetitive peak voltage
V
10
12
1000
1200
1100
1300
40
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
100µs
4510
1970
1050
480
50
180oel
50Hz
400Hz
500
450
320
290
790
810
550
540
3310
1350
1000Hz
330
170
50
190
80
760
510
50
490
300
50
680
280
50
A
V
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state currentdi/dt
50
VDRM
VDRM
V DRM
50
60
50
85
-
-
-
-
A/µs
Case temperature
60
85
60
85
°C
Equivalent values for RC circuit
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
ST173S
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
175
85
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
275
DC @ 75°C case temperature
ITSM
Max. peak, one half cycle,
non-repetitive surge current
4680
4900
3940
4120
110
100
77
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
A
reapplied
100% VRRM
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
No voltage Initial TJ = TJ max
reapplied
KA2s
100% VRRM
71
reapplied
I2√t
Maximum I2√t for fusing
1100
KA2√s t = 0.1 to 10ms, no voltage reapplied
Document Number: 93667
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2
ST173S Series
Bulletin I25181 rev. C 12/96
On-state Conduction
Parameter
ST173S
2.07
Units Conditions
VTM
Max. peak on-state voltage
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
1.55
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
1.58
0.87
0.82
(I > π x IT(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
1
t
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
t2
IH
IL
Maximum holding current
600
TJ = 25°C, IT > 30A
mA
Typical latching current
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST173S
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM
A/µs
ITM = 2 x di/dt
TJ = 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
1.1
d
Resistive load, Gate pulse: 10V, 5Ω source
µs
Min Max
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
t
Max. turn-off time
15
25
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST173S
500
Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max., linear to 80% VDRM, higher value
V/µs
available on request
IRRM
IDRM
Max. peak reverse and off-state
leakage current
40
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST173S
Units Conditions
PGM
60
10
10
W
A
TJ = TJ max, f = 50Hz, d% = 50
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
T
J = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max., rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
Document Number: 93667
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ST173S Series
Bulletin I25181 rev. C 12/96
Thermal and Mechanical Specifications
Parameter
ST173S
Units
°C
Conditions
TJ
T
Max. junction operating temperature range -40 to 125
Max. storage temperature range
-40 to 150
0.105
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
DC operation
K/W
0.04
Mounting surface, smooth, flat and greased
T
Mounting torque, ± 10%
31
Nm
(Ibf-in)
Nm
Non lubricated threads
Lubricated threads
(275)
24.5
(210)
280
(Ibf-in)
g
wt
Approximate weight
Case style
TO-209AB (TO-93)
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
180°
120°
90°
0.016
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
ST 17
3
S
12
P
F
K
0
7
1
2
3
4
5
6
8
9
10
12345- T3ESVhos=ysltraeCFisgnaotetosimartclpotuprderaensr:stoCinoffonudmbeobxned1ri0n0g=StVud
RRM-76(SRPeee=aVpSpotullitedadgbedavsR/edat3ticn/4og"ds1et6a(UfbolNer )Ft -2A
M = Stud base metric threads M16 x 1.5
dv/dt - tq combinations available
dv/dt (V/µs) 20
50
100 200 400
-8test t condition)
q
15
18
20
25
30
CL
CP
CK
CJ
--
--
--
--
FP *
--
--
-9co0de= Eyelet terminals (Gate and Aux. Cathode Leads)
q
DP
DK
DJ
DH
EP
EK
EJ
EH
t (µs)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
FK * HK
q
FJ
HJ
2 = Flag terminals (For Cathode and Gate Terminals)
Critical dv/dt:
FH
HH
-
*Standard part number.
All other types available only on request.
10
None = 500V/µsec (Standard value)
= 1000V/µsec (Special selection)
L
Document Number: 93667
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4
ST173S Series
Bulletin I25181 rev. C 12/96
Outline Table
CERAMIC HOUSING
19 (0.75) MAX.
4 (0.16) MAX.
8.5 (0.33) DIA.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 25mm
(0.039 s.i.)
RED SILICON RUBBER
RED CATHODE
2
Fast-on Terminals
C.S. 0.4mm
(0.0006 s.i.)
AMP. 280000-1
REF-250
WHITE GATE
+I
+
220 (8.66) 10 (0.39)
-
RED SHRINK
WHITE SHRINK
27.5 (1.08) MAX. DIA.
SW 32
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
3/4"-16UNF-2A *
35 (1.38) MAX.
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING
FLAG TERMINALS
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
1.5 (0.06) DIA.
DIA. 27.5 (1.08) MAX.
SW 32
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
Document Number: 93667
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ST173S Series
Bulletin I25181 rev. C 12/96
130
130
120
110
100
90
ST173S Se rie s
(DC ) = 0.105 K/ W
ST173S Se rie s
R
R
(DC ) = 0.105 K/ W
th JC
thJC
120
110
100
90
C o nd u ction Pe rio d
C o nd uc tio n An g le
30°
60°
30°
90°
120°
80
60°
180°
90°
120°
180°
DC
80
70
0
20 40 60 80 100 120 140 160 180
0
40
80
120 160 200 240 280
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e On-sta te C urre nt (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
350
180°
120°
300
90°
250
200
150
100
50
60°
30°
0
.
4
K
RMS Lim it
/
W
0
0
.
5
K
/
W
W
.
8
C o nd uc tion Ang le
K
/
1
. 2
K
/W
ST173S Se rie s
T
= 125°C
J
0
0
20 40 60 80 100 120 140 160 1
8
0
50
75
100
125
Ave ra g e On-sta te C urre nt (A)
Ma xim um Allow a b le Am b ie n t Te mp e ra ture (°C )
Fig. 3 - On-state Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
DC
R
180°
120°
90°
60°
30°
=
0
.
0
8
K
/
0
0
W
.
1
6
-
K
D
/
W
e
l
t
a
.
2
R
K
/
W
0
RMS Lim it
.
.
4
5
K
/
W
Co n d uc tion Pe rio d
0
0
K
/
W
W
.8
K
/
ST173S Se rie s
T = 125°C
J
1
.2
K
/ W
0
0
40
80 120 160 200 240
2
8
0
50
75
100
125
Ave ra g e On -sta te Curre nt (A)
Ma ximum Allo wa b le Amb ie n t Te mp e ra ture (°C )
Fig. 4 - On-state Power Loss Characteristics
Document Number: 93667
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ST173S Series
Bulletin I25181 rev. C 12/96
5000
4500
4000
3500
3000
2500
2000
1500
4500
4000
3500
3000
2500
2000
Ma xim um Non Re p e titive Surg e C urre nt
Ve rsus Pulse Tra in Dura tio n. C on tro l
O f Co nd uc tion Ma y No t Be Ma inta ine d .
At An y Ra te d Lo a d C o nd itio n And With
Ra te d V
Ap p lie d Fo llow in g Surg e .
RRM
Initia l T = 125°C
J
In itia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
ST173S Se rie s
ST173S Se rie s
1
10
100
0.01
0.1
Pulse Tra in Dura tion (s)
1
Numb er O f Eq ua l Amp litu d e Ha lf C ycle Cu rre nt Pulse s (N)
Fig. 6 - Maximum Non-repetitive Surge Current
Fig. 5 - Maximum Non-repetitive Surge Current
10000
1
Ste a d y Sta te Va lue
ST173S Series
R
= 0.105 K/W
thJ C
(DC O p e ra tion )
0.1
1000
T = 25°C
J
0.01
T = 125°C
J
ST173S Se rie s
100
0.001
0.001
0.01
0.1
1
10
1
1.5
2
2.5
3
3.5
4
4.5
Sq ua re Wa ve Pulse Dura tio n (s)
InstantaneousOn-state Volta ge (V)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
250
200
150
100
50
160
140
120
100
80
I
= 500 A
TM
I
= 500 A
300 A
200 A
100 A
50 A
TM
ST173S Se rie s
300 A
200 A
T = 125 °C
J
100 A
60
50 A
40
ST173S Se rie s
20
T = 125 °C
J
0
0
0
20
40
60
80
100
0
20
40
60
80
100
Ra te Of Fa ll Of On -sta te C urre nt - d i/ d t (A/ µs)
Fig. 9 - Reverse Recovered Charge Characteristics
Document Number: 93667
Ra te O f Fa ll Of O n-sta te C urre nt - d i/d t (A/ µs)
Fig. 10 - Reverse Recovery Current Characteristics
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ST173S Series
Bulletin I25181 rev. C 12/96
1E4
Snub b e r c irc u it
Snub b e r c irc uit
R
C
V
= 47 ohm s
= 0.22 µF
= 80% V
R
C
V
= 47 o hm s
= 0.22 µF
= 80% V
s
s
s
s
D
D
DRM
DRM
400
50 Hz
100
200
500
1000
100 50 Hz
1E3
400 200
500
1000
1500
2000
2500
1500
2000
ST173S Se rie s
3000
ST173S Se rie s
Sinuso id a l p ulse
2500
Sinuso id a l p ulse
T = 85°C
tp
T
= 60°C
3000
C
tp
C
1E2
1E1
11
E1
1E2
1E3
1E4
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se w id th (µs)
Fig. 11 - Frequency Characteristics
1E4
1E3
1E2
1E1
Snub b e r c irc uit
Snub b e r c irc uit
R
C
V
= 47 o hm s
= 0.22 µF
= 80% V
s
s
R
C
V
= 47 o hm s
= 0.22 µF
= 80% V
s
s
D
D
DRM
DRM
50 Hz
100
200
400
50 Hz
100
200
400
500
500
1000
1500
1000
1500
2000
2500
3000
2000
2500
3000
ST173S Se rie s
Tra p e zo id a l p ulse
= 60°C
5000
ST173SSe rie s
Tra p e zoid a l p ulse
T
C
T
= 85°C
C
d i/d t = 50A/µs
5000
tp
d i/ d t = 50A/ µs
1
E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se width (µs)
Pulse Ba se wid th (µs)
Fig. 12 - Frequency Characteristics
1E4
1E3
1E2
1E1
Snub b e r c irc uit
Snub b e r c irc uit
R
C
V
= 47 o hm s
= 0.22 µF
= 80% V
R
C
V
= 47 o hm s
= 0.22 µF
= 80% V
s
s
s
s
D
D
DRM
DRM
50 Hz
50 Hz
100
200
400
100
200
500
400
500
1000
1500
1000
1500
2000
2500
5000
10000
2000
ST173S Se rie s
Tra p e zo id a l p ulse
= 60°C
2500
ST173S Se rie s
5000
10000
Tra p e zo id a l p u lse
= 85°C
T
T
C
C
tp
tp
d i/d t = 100A/µs
d i/d t = 100A/µs
1
1E4
E1
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Ba se width (µs)
Pulse Ba se wid th (µs)
Fig. 13 - Frequency Characteristics
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Document Number: 93667
ST173S Series
Bulletin I25181 rev. C 12/96
1E5
1E4
1E3
1E2
1E1
ST173S Se rie s
Re c ta ng ula r p ulse
d i/d t = 50A/µs
tp
20 jo ule s p e r p ulse
20 jo u le s p e r p ulse
7.5
4
10
2
5
1
3
2
0.5
1
0.3
0.5
0.2
0.1
0.4
0.3
0.2
ST173S Se rie s
0.1
Sinuso id a l p u lse
tp
1E1
1E2
1E3
1E411E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
10
1
Re c ta ng ula r g a te p ulse
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3m s
a ) Re c o mme nd e d lo a d lin e for
ra te d d i/ d t : 20V, 10oh ms; tr<=1 µs
b ) Re c om me n d e d loa d line fo r
<=30% ra te d d i/ d t : 10V, 10oh ms
tr<=1 µs
(a )
(b )
(2) (3) (4)
(1)
VGD
IG D
De vic e : ST173S Se rie s
Fre q ue nc y Lim ite d b y PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Insta nta ne ous Ga te Curre n t (A)
Fig. 15 - Gate Characteristics
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Document Number: 93667
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 99901
Revision: 08-Mar-07
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1
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Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209ABWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
ST173S10PHK0PBF
Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB, ROHS COMPLIANT, TO-93, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
ST173S10PHK1LPBF
Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB, ROHS COMPLIANT, TO-93, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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