ST173S12MDH2LPBF [VISHAY]
Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, ROHS COMPLIANT, TO-93, 3 PIN;
| 型号： | ST173S12MDH2LPBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, ROHS COMPLIANT, TO-93, 3 PIN |
| 文件： | 总11页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST173SPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 175 A
FEATURES
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Lead (Pb)-free
RoHS
COMPLIANT
TO-209AB (TO-93)
• Designed and qualified for industrial level
PRODUCT SUMMARY
TYPICAL APPLICATIONS
• Inverters
IT(AV)
175 A
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
175
UNITS
A
IT(AV)
TC
85
°C
IT(RMS)
275
50 Hz
60 Hz
50 Hz
60 Hz
4680
A
ITSM
4900
110
I2t
kA2s
100
V
DRM/VRRM
1000 to 1200
15 to 25
- 40 to 125
V
tq
Range
µs
°C
TJ
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM
V
RSM, MAXIMUM
IDRM/IRRM MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
REPETITIVE PEAK VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
mA
10
12
1000
1200
1100
1300
ST173S
40
Document Number: 94367
Revision: 29-Apr-08
For technical questions, contact: ind-modules@vishay.com
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1
ST173SPbF Series
Inverter Grade Thyristors
(Stud Version), 175 A
Vishay High Power Products
CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 µs
4510
180° el
180° el
50 Hz
500
450
330
170
320
290
190
80
790
810
760
510
550
540
490
300
3310
1350
680
400 Hz
1970
1050
480
A
V
1000 Hz
2500 Hz
280
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
50
VDRM
50
50
50
VDRM
-
VDRM
-
A/µs
°C
60
85
60
85
60
85
47/0.22
47/0.22
47/0.22
Ω/µF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
VALUES
UNITS
175
85
A
Maximum average on-state current
at case temperature
180° conduction, half sine wave
°C
Maximum RMS on-state current
IT(RMS)
DC at 75 °C case temperature
275
4680
4900
3940
4120
110
100
77
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
Maximum I2t for fusing
I2t
kA2s
100 % VRRM
reapplied
71
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
1100
kA2√s
ITM = 600 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
Maximum peak on-state voltage
VTM
2.07
V
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
1.55
1.58
0.87
0.82
600
VT(TO)2
rt1
rt2
IH
IL
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
mΩ
TJ = 25 °C, IT > 30 A
mA
Typical latching current
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned on current
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
dI/dt
1000
A/µs
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source
Typical delay time
td
1.1
µs
TJ = TJ maximum,
minimum
Maximum turn-off time
15
25
tq
I
TM = 300 A, commutating dI/dt = 20 A/µs
maximum
VR = 50 V, tp = 500 µs, dV/dt: See table in device code
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94367
Revision: 29-Apr-08
ST173SPbF Series
Inverter Grade Thyristors
(Stud Version), 175 A
Vishay High Power Products
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum, linear to 80 % VDRM
higher value available on request
,
Maximum critical rate of rise of off-state voltage
dV/dt
500
V/µs
IRRM
IDRM
,
Maximum peak reverse and off-state leakage current
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
60
10
10
20
5
TJ = TJ maximum, f = 50 Hz, d% = 50
W
A
Maximum average gate power
PG(AV)
IGM
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
+ VGM
- VGM
IGT
TJ = TJ maximum, tp ≤ 5 ms
V
200
3
mA
V
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
VGT
IGD
20
0.25
mA
V
TJ = TJ maximum, rated VDRM applied
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.105
UNITS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
TJ
°C
TStg
RthJC
RthCS
DC operation
K/W
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.04
31
(275)
N · m
(lbf · in)
Mounting torque, 10 %
24.5
(210)
Lubricated threads
Approximate weight
Case style
280
g
See dimensions - link at the end of datasheet
TO-209AB (TO-93)
ΔRthJC CONDUCTION
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
180°
120°
90°
0.016
0.012
0.019
0.020
0.025
0.027
TJ = TJ maximum
K/W
60°
0.036
0.037
30°
0.060
0.060
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94367
Revision: 29-Apr-08
For technical questions, contact: ind-modules@vishay.com
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3
ST173SPbF Series
Inverter Grade Thyristors
(Stud Version), 175 A
Vishay High Power Products
130
130
ST173S Series
RthJC (DC) = 0.105 K/W
ST173S Series
RthJC (DC) = 0.105 K/W
120
110
100
90
120
110
100
90
Ø
Ø
Conduction angle
Conduction period
30 °C
60 °C
90°
180°
90 °C
180 °C
80
30° 60°
DC
120 °C
120°
160
80
70
0
20 40 60 80 100 120 140 160 180
0
40
80
120
200
240
280
Average On-State Current (A)
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
350
300
250
200
150
100
50
350
300
250
200
150
100
50
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
ST173S Series
TJ = 125 °C
0
0
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
Average On-State Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
500
400
300
200
100
0
500
400
300
200
100
0
120°
90°
30°
DC
180°
60°
RMS limit
Ø
Conduction period
ST173S Series
TJ = 125 °C
25
50
75
100
125
0
40
80
120
160
200
240
280
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Average On-State Current (A)
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94367
Revision: 29-Apr-08
ST173SPbF Series
Inverter Grade Thyristors
(Stud Version), 175 A
Vishay High Power Products
1
4500
4000
3500
3000
2500
2000
At any rated load condition and with
rated VRRM applied following surge.
Steady state value
RthJC = 0.105 K/W
(DC operation)
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
0.1
0.01
0.001
ST173S Series
ST173S Series
0.001
0.01
0.1
1
10
1
10
100
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
5000
250
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
ST173S Series
TJ = 125 °C
4500
4000
3500
3000
2500
2000
1500
200
150
100
50
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
ITM = 50 A
ST173S Series
0
0.01
0.1
1
0
20
40
60
80
100
Pulse Train Duration (s)
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovered Current Characteristics
10 000
160
ST173S Series
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
140
120
100
80
1000
TJ = 125 °C
TJ = 25 °C
60
40
ST173S Series
TJ = 125 °C
20
100
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
20
40
60
80
100
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
Document Number: 94367
Revision: 29-Apr-08
For technical questions, contact: ind-modules@vishay.com
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5
ST173SPbF Series
Inverter Grade Thyristors
(Stud Version), 175 A
Vishay High Power Products
10 000
10 000
Snubber circuit
Rs = 47 Ω
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
Cs = 0.22 µF
VD = 80 % VDRM
100
200
400
50 Hz
500
1000
1500
2000
2500
3000
50 Hz
100
1000
1000
200
400
500
1000
1500
2000
2500
3000
ST173S Series
ST173S Series
Sinusoidal pulse
TC = 85 °C
Sinusoidal pulse
TC = 60 °C
tp
tp
100
100
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
10 000
1000
100
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
500
1000
1000
100
10
50 Hz
100
50 Hz
200
100
200
400
500
1000
400
1500
2500
2000
1500
3000
2000
2500
5000
3000
ST173S Series
Trapezoidal pulse
TC = 60 °C
ST173S Series
Trapezoidal pulse
TC = 85 °C
5000
tp
tp
dI/dt = 50 A/µs
dI/dt = 50 A/µs
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
10 000
1000
100
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
1000
100
10
400
200
100
500
1000
1500
50 Hz
100
200
400
500
1000
1500
2000
2500
5000
10 000
2000
5000
2500
ST173S Series
Trapezoidal pulse
TC = 60 °C
ST173S Series
Trapezoidal pulse
TC = 85 °C
10 000
tp
tp
dI/dt = 100 A/µs
dI/dt = 100 A/µs
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94367
Revision: 29-Apr-08
ST173SPbF Series
Inverter Grade Thyristors
(Stud Version), 175 A
Vishay High Power Products
100 000
10 000
1000
100
100 000
ST173S Series
Rectangular pulse
dI/dt = 50 A/µs
tp
10 000
1000
100
20 joules per pulse
7.5
4
20 joules per pulse
2
1
10
5
3
2
0.5
0.3
0.2
1
0.5
0.4
0.3
0.2
0.1
ST173S Series
Sinusoidal pulse
0.1
tp
10
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
10
Rectangular gate pulse
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(a)
(b)
1
(1)
(2)
(3) (4)
VGD
IGD
Device: ST173S Series
0.1
Frequency limited by PG(AV)
10
0.1
0.001
0.01
1
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Document Number: 94367
Revision: 29-Apr-08
For technical questions, contact: ind-modules@vishay.com
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7
ST173SPbF Series
Inverter Grade Thyristors
(Stud Version), 175 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
ST
17
3
S
12
P
F
K
0
-
PbF
1
2
3
4
5
6
7
8
9
10
11
1
2
3
4
5
6
-
-
-
-
-
-
Thyristor
Essential part number
3 = Fast turn-off
S = Compression bonding stud
Voltage code x 100 = VRRM (see Voltage Ratings table)
P = Stud base 3/4" 16UNF-2A
M = Stud base metric threads M16 x 1.5
Reapplied dV/dt code (for tq test condition)
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
7
8
9
-
-
-
15
18
20
25
30
CL
-
-
-
-
-
tq code
CP DP EP FP*
FK*
tq (µs)
0 = Eyelet terminals
(gate and aux. cathode leads)
CK DK EK
HK
CJ DJ EJ FJ HJ
-
DH EH FH HH
1 = Fast-on terminals
(gate and aux. cathode leads)
* Standard part number.
All other types available only on request.
2 = Flag terminals (for cathode and gate terminals)
-
-
Critical dV/dt:
10
11
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95079
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8
For technical questions, contact: ind-modules@vishay.com
Document Number: 94367
Revision: 29-Apr-08
Outline Dimensions
Vishay Semiconductors
TO-209AB (TO-93)
DIMENSIONS - TO-209AB (TO-93) in millimeters (inches)
4 (0.16) MAX.
Ceramic housing
19 (0.75) MAX.
8.5 (0.33) DIA.
4.3 (0.17) DIA.
Flexible leads
C.S. 25 mm2
(0.039 s.i.)
22 (0.86) MIN.
Red silicon rubber
Red cathode
C.S. 0.4 mm2
(0.006 s.i.)
White gate
Fast-on Terminals
AMP. 280000-1
REF-250
Red shrink
White shrink
27.5 (1.08)
MAX. DIA.
SW 32
3/4"-16UNF-2A (1)
35 (1.38)
MAX.
Note
(1)
For metric device: M16 x 1.5 - length 21 (0.83) maximum
Document Number: 95079
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
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1
Outline Dimensions
Vishay Semiconductors
TO-209AB (TO-93)
DIMENSIONS - TO-209AB (TO-93) FLAG TERMINALS in millimeters (inches)
Ceramic housing
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
1.5 (0.06) DIA.
DIA. 27.5 (1.08) MAX.
16 (0.63)
MAX.
SW 32
3/4"-16UNF-2A (1)
3 (0.12)
Note
(2)
For metric device: M16 x 1.5 - length 21 (0.83) maximum
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Document Number: 95079
Revision: 01-Aug-07
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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VISHAY
ST173S12MDJ1LPBF
Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, ROHS COMPLIANT, TO-93, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
ST173S12MDJ1PBF
Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, ROHS COMPLIANT, TO-93, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
ST173S12MDJ2LPBF
Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, ROHS COMPLIANT, TO-93, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
ST173S12MDK0
Silicon Controlled Rectifier, 275A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209ABWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
ST173S12MDK0L
Silicon Controlled Rectifier, 275A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209ABWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
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