ST180C18C1PBF [VISHAY]
Silicon Controlled Rectifier, 660A I(T)RMS, 350000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, TO-200AB, LEAD FREE, APUK-2;
| 型号： | ST180C18C1PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 660A I(T)RMS, 350000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, TO-200AB, LEAD FREE, APUK-2 栅 栅极 |
| 文件： | 总8页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST180CPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 350 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
RoHS
• International standard case TO-200AB (A-PUK)
• Lead (Pb)-free
COMPLIANT
TO-200AB (A-PUK)
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
PRODUCT SUMMARY
IT(AV)
350 A
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
350
UNITS
A
°C
A
IT(AV)
Ths
55
660
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
5000
A
5230
125
kA2s
114
V
DRM/VRRM
400 to 2000
100
V
tq
Typical
µs
°C
TJ
- 40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
V
RSM, MAXIMUM
IDRM/IRRM MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
AND OFF-STATE VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
mA
04
08
12
16
18
20
400
800
500
900
1200
1600
1800
2000
1300
1700
1900
2100
ST180C..C
30
Document Number: 94396
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST180CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 350 A
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
350 (140)
55 (85)
660
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
IT(AV)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
5000
5230
4200
4400
125
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
114
Maximum I2t for fusing
I2t
kA2s
88
100 % VRRM
reapplied
81
Maximum I2√t for fusing
I2√t
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
1250
1.08
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
V
1.14
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
1.18
mΩ
V
rt2
1.14
VTM
IH
Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.96
Maximum holding current
600
TJ = 25 °C, anode supply 12 V resistive load
mA
Maximum (typical) latching current
IL
1000 (300)
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
dI/dt
1000
A/µs
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical delay time
Typical turn-off time
td
tq
1.0
µs
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
100
V
R = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
500
V/µs
Maximum peak reverse and
off-state leakage current
IRRM
,
30
mA
IDRM
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94396
Revision: 11-Aug-08
ST180CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 350 A
Vishay High Power Products
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
TJ = TJ maximum, tp ≤ 5 ms
10
2.0
3.0
20
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ VGM
- VGM
TJ = TJ maximum, tp ≤ 5 ms
V
5.0
TJ = - 40 °C
TJ = 25 °C
180
90
-
150
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate trigger/
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
40
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied
2.9
1.8
1.2
-
VGT
3.0
-
Maximum gate current/voltage not
to trigger is the maximum value
TJ = TJ maximum which will not trigger any unit with
rated VDRM anode to cathode
applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
0.17
DC operation single side cooled
Maximum thermal resistance,
junction to heatsink
RthJ-hs
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
0.08
K/W
0.033
0.017
Maximum thermal resistance,
case to heatsink
RthC-hs
4900
(500)
N
(kg)
Mounting force, 10 %
Approximate weight
Case style
50
g
See dimensions - link at the end of datasheet
TO-200AB (A-PUK)
ΔRthJC CONDUCTION
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
0.015
SINGLE SIDE
0.011
DOUBLE SIDE
0.011
0.015
0.018
0.024
0.035
0.060
180°
120°
90°
0.019
0.019
0.019
0.024
0.026
0.026
TJ = TJ maximum
K/W
0.035
0.036
0.037
60°
0.060
0.060
0.061
30°
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94396
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST180CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 350 A
Vishay High Power Products
130
120
130
ST180C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
ST180C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
120
110
100
90
110
100
90
Ø
Ø
80
Conduction angle
Conduction period
70
80
60
70
30°
50
180°
DC
180°
60
90°
40
30°
50
60°
90°
30
60°
120°
200
120°
20
40
0
0
0
50
100
150
250
0
100
200
300
400
500
600
700
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
130
120
110
100
90
1000
900
800
700
600
500
400
300
200
100
0
180°
120°
90°
60°
30°
ST180C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
RMS limit
Ø
80
Conduction period
70
60
Ø
50
Conduction angle
30°
DC
40
90°
ST180C..C Series
TJ = 125 °C
180°
30
60°
120°
200
20
100
300
400
0
50 100 150 200 250 300 350 400 450
Average On-State Current (A)
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
130
120
110
100
90
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
DC
180°
120°
90°
60°
30°
ST180C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.17 K/W
RMS limit
Ø
80
Conduction angle
70
60
30°
Ø
Conduction period
180°
50
40
ST180C..C Series
TJ = 125 °C
30
60°
90°
120°
20
50 100 150 200 250 300 350 400 450
Average On-State Current (A)
0
100
200
300
400
500
600
700
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
Fig. 3 - Current Ratings Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94396
Revision: 11-Aug-08
ST180CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 350 A
Vishay High Power Products
4500
4000
3500
3000
2500
2000
5000
At any rated load condition and with
rated VRRM applied following surge
Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
4500
4000
3500
3000
2500
2000
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
No Voltage Reapplied
Rated VRRM Reapplied
ST180C..C Series
ST180C..C Series
1
10
100
0.01
0.1
1
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10 000
TJ = 25 °C
TJ = 125 °C
1000
ST180C..C Series
100
1
2
3
4
5
6
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
1
0.1
Steady state value
thJ-hs = 0.17 K/W
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
R
0.01
ST180C..C Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Document Number: 94396
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
ST180CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 350 A
Vishay High Power Products
100
(1) PGM = 10 W, tp = 4 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 40 W, tp = 1 ms
(4) PGM = 60 W, tp = 0.66 ms
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(a)
10
(b)
1
(3) (4)
(1)
(2)
VGD
IGD
0.01
Device: ST180C..C Series
0.1
Frequency limited by PG(AV)
10
0.1
0.001
1
100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
ST
18
0
C
20
C
1
-
PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
-
-
-
Thyristor
Essential part number
0 = Converter grade
-
-
-
-
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
C = PUK case TO-200AB (A-PUK)
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
8
9
-
-
Critical dV/dt: None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95074
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6
For technical questions, contact: ind-modules@vishay.com
Document Number: 94396
Revision: 11-Aug-08
Outline Dimensions
Vishay Semiconductors
TO-200AB (A-PUK)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95074
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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