ST180S04P0PBF [VISHAY]
Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, TO-93, 3 PIN;
| 型号： | ST180S04P0PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB, ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, TO-93, 3 PIN 栅 栅极 |
| 文件： | 总8页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST180SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 200 A
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
RoHS
• Hermetic metal case with ceramic insulator
COMPLIANT
(Also available with glass-metal seal up to 1200 V)
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Lead (Pb)-free
TO-209AB (TO-93)
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
PRODUCT SUMMARY
IT(AV)
200 A
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
200
UNITS
A
°C
A
IT(AV)
TC
85
IT(RMS)
314
50 Hz
60 Hz
50 Hz
60 Hz
5000
ITSM
A
5230
125
I2t
kA2s
114
V
DRM/VRRM
400 to 2000
100
V
tq
Typical
µs
°C
TJ
- 40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM REPETITIVE PEAK
V
RSM, MAXIMUM
I
DRM/IRRM MAXIMUM
TYPE
NUMBER
VOLTAGE
CODE
AND OFF-STATE VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
mA
04
08
12
16
20
400
800
500
900
ST180S
30
1200
1600
2000
1300
1700
2100
Document Number: 94397
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST180SPbF Series
Phase Control Thyristors
(Stud Version), 200 A
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
180° conduction, half sine wave
DC at 76 °C case temperature
VALUES UNITS
200
85
A
Maximum average on-state current
at case temperature
IT(AV)
°C
Maximum RMS on-state current
IT(RMS)
314
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
5000
5230
4200
4400
125
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
114
Maximum I2t for fusing
I2t
kA2s
88
100 % VRRM
reapplied
81
Maximum I2√t for fusing
I2√t
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
1250
1.08
1.14
1.18
1.14
1.75
600
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
V
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
mΩ
V
rt2
VTM
IH
Ipk = 570 A, TJ = 125 °C, tp = 10 ms sine pulse
Maximum holding current
TJ = TJ maximum, anode supply 12 V resistive load
mA
Maximum (typical) latching current
IL
1000 (300)
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
dI/dt
1000
A/µs
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical delay time
Typical turn-off time
td
tq
1.0
µs
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
100
V
R = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise
of off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
500
V/µs
Maximum peak reverse and
off-state leakage current
IRRM
,
30
mA
IDRM
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94397
Revision: 11-Aug-08
ST180SPbF Series
Phase Control Thyristors
(Stud Version), 200 A
Vishay High Power Products
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP.
MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
TJ = TJ maximum, tp ≤ 5 ms
10
2.0
3.0
20
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp ≤ 5 ms
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ VGM
- VGM
TJ = TJ maximum, tp ≤ 5 ms
V
5.0
TJ = - 40 °C
TJ = 25 °C
180
90
-
150
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate trigger/
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
40
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.9
1.8
1.2
-
VGT
3.0
-
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.105
UNITS
Maximum operating junction
temperature range
TJ
°C
Maximum storage temperature range
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
K/W
Maximum thermal resistance,
case to heatsink
RthC-hs
Mounting surface, smooth, flat and greased
Non-lubricated threads
0.04
31
(275)
N · m
(lbf ⋅ in)
Mounting torque, 10 %
24.5
(210)
Lubricated threads
Approximate weight
Case style
280
g
See dimensions - link at the end of datasheeet
TO-209AB (TO-93)
ΔRthJC CONDUCTION
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
180°
120°
90°
0.015
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94397
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST180SPbF Series
Phase Control Thyristors
(Stud Version), 200 A
Vishay High Power Products
130
130
120
110
ST18 0S Se r i e s
(DC) = 0.105 K/W
ST1 80 S Se rie s
thJC
R
R
(DC) = 0.105 K/ W
thJC
120
110
100
90
Conduction Period
Conduction Angle
100
90
30°
60°
90°
30°
120°
60°
90°
80
180°
120°
DC
180°
70
80
0
50 100 150 200 250 300 350
0
40
80
120 160 200 240
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
R
t
180°
h
S
120°
A
0
300
.
=
0
1
6
90°
60°
K
.
0
/
8
W
K
/
0
.
2
W
250
30°
K
/
-
W
D
0
.
3
e
K
l
t
/
a
W
RMS Lim it
R
200
150
100
50
Conduction Angle
ST18 0 S Se rie s
0
.
8
K
/
W
T = 1 25° C
J
0
0
40
80
120 160 200
2
2
4
5
0
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
RMS Lim it
Conduction Period
0
.
5
K
/
W
ST180SSeries
T = 125° C
J
0
0
40 80 120 160 200 240 280 3
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
2
0
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94397
Revision: 11-Aug-08
ST180SPbF Series
Phase Control Thyristors
(Stud Version), 200 A
Vishay High Power Products
5500
4800
4400
4000
3600
3200
2800
2400
2000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
5000
4500
4000
3500
3000
2500
2000
Initial T = 125°C
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Ra t e d V
Re a p p lie d
RRM
ST1 8 0 S Se r ie s
ST180SSeries
1
10
100
0.01
0.1
Pulse Tra in Durat ion (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
10000
1000
100
T = 2 5° C
J
T = 125°C
J
ST1 8 0 S Se r ie s
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
1
0.1
Steady State Value
= 0.105 K/ W
R
thJC
(DC Operation)
0.01
ST1 8 0 S Se r ie s
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Document Number: 94397
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
ST180SPbF Series
Phase Control Thyristors
(Stud Version), 200 A
Vishay High Power Products
100
(1) PGM = 10W, tp = 4ms
Rectangular gate pulse
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(a)
10
1
(b)
(3)
(1) (2)
(4)
VGD
IGD
De v i c e : ST180S Se r i e s
0.1
Frequency Limited by PG(AV)
10 100
0.1
0.001
0.01
1
In st a n t a n e o us G a t e C urre n t ( A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
ST
18
0
S
20
P
0
-
PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
-
-
-
Thyristor
Essential part number
0 = Converter grade
-
-
-
-
S = Compression bonding stud
Voltage code x 100 = VRRM (see Voltage Ratings table)
P = Stud base 3/4"-16UNF2A threads
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
V = Glass-metal seal (only up to 1200 V)
None = Ceramic housing (over 1200 V)
Lead (Pb)-free
-
-
8
9
Note: For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95082
www.vishay.com
6
For technical questions, contact: ind-modules@vishay.com
Document Number: 94397
Revision: 11-Aug-08
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-209AB (TO-93)
DIMENSIONS in millimeters (inches)
Glass metal seal
13 (0.75) MAX.
4 (0.16) MAX.
8.5 (0.ꢀꢀ) DIA.
4.ꢀ (0.17) DIA.
Flexible leads
C.S. 25 mm2
(0.0ꢀ3 s.i.)
Red silicon rubber
Red cathode
C.S. 0.4 mm2
(0.0006 s.i.)
White gate
Fast-on terminals
AMP. 280000-1
REF-250
Red shrink
White shrink
28.5 (1.12) MAX. DIA.
27.5 (1.08) MAX.
SW ꢀ2
ꢀ/4"-16UNF-2A (1)
ꢀ5 (1.ꢀ8) MAX.
Ceramic housing
13 (0.75) MAX.
4 (0.16) MAX.
8.5 (0.ꢀꢀ) DIA.
4.ꢀ (0.17) DIA.
Flexible leads
C.S. 25 mm2
(0.0ꢀ3 s.i.)
Red silicon rubber
Red cathode
C.S. 0.4 mm2
(0.006 s.i.)
White gate
Red shrink
White shrink
27.5 (1.08) MAX. DIA.
27.5 (1.08) MAX.
SW ꢀ2
ꢀ/4"-16UNF-2A (1)
ꢀ5 (1.ꢀ8) MAX.
Note
(1)
For metric device: M16 x 1.5 - length 21 (0.83) maximum
Revision: 05-Mar-12
Document Number: 95082
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
ST180S04P0VLPBF
Silicon Controlled Rectifier, 314A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB
INFINEON
©2020 ICPDF网 联系我们和版权申明