ST1900C46R3LPBF [VISHAY]
Silicon Controlled Rectifier, 3500A I(T)RMS, 4600V V(DRM), 4600V V(RRM), 1 Element, RPUK-2;
| 型号： | ST1900C46R3LPBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 3500A I(T)RMS, 4600V V(DRM), 4600V V(RRM), 1 Element, RPUK-2 |
| 文件： | 总6页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25197 rev. B 02/00
ST1900C..R SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
1940A
Double side cooling
High surge capability
High mean current
Fatigue free
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
(R-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST1900C..R
Units
1625
80
A
°C
A
@ TC
IT(AV)
1940
@ T
@ T
55
°C
A
hs
IT(RMS)
3500
25
°C
A
hs
ITSM
@ 50Hz
@ 60Hz
27500
29000
A
I2t
@ 50Hz
@ 60Hz
3780
3490
KA2s
KA2s
V
VDRM/VRRM
4500 to 5200
500
t
typical
max.
µs
q
TJ
125
°C
1
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ST1900C..R Series
Bulletin I25197 rev. B 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
ST1900C..R
peak and off-state voltage
V
repetitive peak voltage
V
@ T = 125°C
CmA
45
46
48
50
52
4500
4600
4800
5000
5200
4600
4700
4900
5100
5300
250
On-state Conduction
Parameter
ST1900C..R
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
1625 (1030)
80
A
°C
A
180° conduction, half sine wave
IT(AV) Max. average on-state current
1940 (800)
double side (single side [anode side]) cooled
@ Heatsink temperature
55 (85)
3500
°C
IT(RMS) Max. RMS on-state current
A
DC @ 25°C heatsink temperature double side cooled
27500
29000
22000
23500
3780
3490
2420
2290
1.4
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
TJ = TJ max.
ITSM
Max. peak, one-cycle
No voltage
reapplied
50% VRRM
reapplied
No voltage
reapplied
50% VRRM
reapplied
non-repetitive surge current
A
Sinusoidal half wave,
I2t
Maximum I2t for fusing
Initial TC = 125°C
KA2s
VT(TO) Max. value of threshold voltage
V
rt
Max. value of on-state slope
resistance
mΩ
0.31
TJ = TJ max.
VTM
IL
Max. on-state voltage
Typical latching current
2.1
V
I = 2900A, TC = 25°C
pk
300
mA
TJ = 25°C, VD = 5V
Switching
Parameter
ST1900C..R
150 (300)
Units Conditions
di/dt
Max. repetitive 50Hz (no repetitive)
rate of rise of turned-on current
From 67% VDRM to 1000A gate drive 20V, 10Ω, t = 0.5µs
r
A/µs
to 1A, TJ = TJ max.
Gate drive 30V, 15Ω, V = 67% VDRM, TJ = 25°C
d
t
Maximum delay time
Typical turn-off time
2.5
d
q
Rise time 0.5µs
µs
IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V,
p
t
500
dIRR/dt = 20A/µs, VDR =67% VDRM, dVDR/dt = 8V/µs linear
2
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ST1900C..R Series
Bulletin I25197 rev. B 02/00
Blocking
Parameter
ST1900C..R
500
Units Conditions
V/µs TJ = TJ max. to 67% rated VDRM
dv/dt Maximum linear rate of rise of
off-state voltage
IRRM
IDRM
Max. peak reverse and off-state
leakage current
250
mA
TJ = 125°C rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
ST1900C..R
Units Conditions
= 100µs
PGM
150
10
t
p
W
IGM
Max. peak positive gate current
Max. peak positive gate voltage
30
A
V
V
Anode positive with respect to cathode
Anode positive with respect to cathode
Anode negative with respect to cathode
VGM
30
-VGM Max. peak negative gate voltage
0.25
IGT
Maximum DC gate current
required to trigger
400
4
mA
V
TC = 25°C, VDRM = 5V
VGT
Maximum gate voltage required
to trigger
TC = 25°C, VDRM = 5V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
VGD
DC gate voltage not to trigger
0.25
V
TC = 125°C
Thermal and Mechanical Specification
Parameter
ST1900C..R
Units Conditions
On-state (conducting)
TJ max. Max. operating temperature
125
°C
T
Max. storage temperature range
-55 to 125
stg
RthJ-C Thermal resistance, junction
to case
0.019
DC operation single side cooled
DC operation double side cooled
K/W
K/W
0.0095
Rth(C-h) Thermal resistance, case
to heatsink
0.004
0.002
Singlesidecooled
Double side cooled
Clamping force 43KN with
mounting compound
43000
(4400)
N
F
Mounting force 10%
(Kg)
wt
Approximate weight
Case style
1600
g
(R-PUK)
See Outline Table
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
Single side
0.0010
Double side
0.0010
Units
K/W
Conditions
TJ = TJ max.
180°
120°
60°
0.0017
0.0017
0.0044
0.0044
3
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ST1900C..R Series
Bulletin I25197 rev. B 02/00
Ordering Information Table
Device Code
ST 190
0
C
52
R
1
7
1
2
3
5
6
8
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
R = Puk Case
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
Outline Table
112.5 (4.4) DIA. MAX.
73.2 (2.9) DIA. MAX.
TWO PLACES
GATE
1.5 (0.06) DIA.
ANODE
HOLE 1.5 (0.06)
DIA. MAX.
4.76 (0.2)
CATHODE
20° 5°
)
4
2
.
0
(
3
.
6
(R-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
3.7 (0.15) DIA. NOM. X
2.1 (0.1) DEEP MIN.
BOTH ENDS
4
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ST1900C..R Series
Bulletin I25197 rev. B 02/00
130
120
110
100
90
130
120
110
100
90
ST1900C..R Series
(Double Side Cooled)
ST1900C..R Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.0115 K/W
R
(DC) = 0.023 K/W
thJ-hs
Conduction Angle
80
80
Conduction Angle
70
70
60˚
60
60
120˚
60˚
50
180˚
50
120˚
40
40
180˚
30
30
DC
DC
20
20
0
1000
2000
3000
4000
0
500 1000 1500 2000 2500
AverageOn-stateCurrent(A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
10000
1000
100
DC
180˚
120˚
60˚
RMS Limit
T = 125˚C
J
Conduction Angle
ST1900C..R Series
ST1900C..R Series
T
= 125˚C
J
1
1.5
2
2.5
3
3.5
4
4.5
0
1000
2000
3000
4000
Average On-state Current (A)
Average On-state Current (A)
Fig. 4- On-state Power Loss Characteristics
Fig. 3- On-state Power Loss Characteristics
26000
24000
22000
20000
18000
16000
14000
12000
10000
8000
60
55
50
45
40
35
30
25
20
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
50% Rated V
Applied Following Surge
RRM
Initial T = 125˚C
J
Initial T = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
50% Rated V
Reapplied
RRM
ST1900C..R Series
ST1900C..R Series
1
10
100
1
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig.5 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 6 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
5
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ST1900C..R Series
Bulletin I25197 rev. B 02/00
100000
T
= 125˚C
J
I
T
d
I
T
d
t
I
= 1400A
T
t
= s
3m
t
p
Q
rr
10000
(R C)
E
I
RM
ST1900C..R Series
10
1000
0.1
1
100
Rate Of Decay Of On-state Current - di/dt (A/µs)
Fig. 7 - Stored Charged
0.1
0.01
ST1900C..R Series
Steady State Value
= 0.019 K/W
R
thJ-C
(Single Side Cooled)
= 0.0095 K/W
0.001
0.0001
R
thJ-C
(Double Side Cooled)
(DC Operation)
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1
10
100
100
10
1
(1) PGM = 2W
(2) PGM = 4W
(3) PGM = 8W
(4) PGM = 20W
(5) PGM = 50W
(6) PGM =100W
(6)
(5)
(2)
(4)
(3)
(1)
VGD
IGD
Device: ST1900C..R Series
Frequency Limited by PG(AV)
1
0.1
0.001
0.01
0.1
10
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
6
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