ST203C10CDK0L-PBF [VISHAY]
Silicon Controlled Rectifier, SCR;
| 型号： | ST203C10CDK0L-PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, SCR |
| 文件： | 总10页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST203CPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
RoHS
COMPLIANT
• International standard case TO-200AB (A-PUK)
• Guaranteed high dI/dt
TO-200AB (A-PUK)
• High surge current capability
• Low thermal impedance
• High speed performance
• Lead (Pb)-free
• Designed and qualified for industrial level
PRODUCT SUMMARY
TYPICAL APPLICATIONS
IT(AV)
370 A
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
370
UNITS
A
°C
A
IT(AV)
Ths
55
700
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
5260
A
5510
138
kA2s
126
V
DRM/VRRM
1000 to 1200
20 to 30
- 40 to 125
V
tq
Range
µs
°C
TJ
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RSM, MAXIMUM
V
DRM/VRRM, MAXIMUM
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VOLTAGE
CODE
TYPE NUMBER
REPETITIVE PEAK VOLTAGE NON-REPETITIVE PEAK VOLTAGE
V
V
10
12
1000
1200
1100
1300
ST203C..C
40
Document Number: 94370
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST203CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 µs
5620
180° el
180° el
1340
50 Hz
860
840
700
430
750
706
580
340
1160
1220
1170
830
5020
2590
1520
780
400 Hz
1400
1350
980
2940
1750
910
A
V
1000 Hz
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
50
VDRM
50
50
VDRM
-
50
VDRM
-
A/µs
°C
40
55
40
55
40
55
47/0.22
47/0.22
47/0.22
Ω/µF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
VALUES
UNITS
370 (140)
55 (85)
700
A
Maximum average on-state current
at heatsink temperature
°C
Maximum RMS on-state current
IT(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
5260
5510
4420
4630
138
No voltage
reapplied
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
126
Maximum I2t for fusing
I2t
kA2s
98
100 % VRRM
reapplied
89
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
1380
kA2√s
ITM = 600 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
Maximum peak on-state voltage
VTM
1.72
V
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
1.17
1.22
0.92
0.83
600
VT(TO)2
rt1
rt2
IH
IL
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
mΩ
TJ = 25 °C, IT > 30 A
mA
Typical latching current
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
1000
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94370
Revision: 30-Apr-08
ST203CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned on current
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
dI/dt
1000
A/µs
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source
Typical delay time
td
0.8
µs
TJ = TJ maximum,
minimum
maximum
20
30
Maximum turn-off time
tq
I
TM = 300 A, commutating dI/dt = 20 A/µs
R = 50 V, tp = 500 µs, dV/dt: See table in device code
V
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum, linear to 80 % VDRM
higher value available on request
,
Maximum critical rate of rise of off-state voltage
dV/dt
500
V/µs
IRRM
IDRM
,
Maximum peak reverse and off-state leakage current
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
60
10
10
20
5
TJ = TJ maximum, f = 50 Hz, d % = 50
W
A
Maximum average gate power
PG(AV)
IGM
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
+ VGM
- VGM
IGT
TJ = TJ maximum, tp ≤ 5 ms
V
200
3
mA
V
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
VGT
IGD
20
0.25
mA
V
TJ = TJ maximum, rated VDRM applied
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.17
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
0.08
K/W
0.033
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
RthC-hs
0.017
4900
(500)
N
(kg)
Approximate weight
Case style
50
g
See dimensions - link at the end of datasheet
TO-200AB (A-PUK)
Document Number: 94370
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST203CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.015
0.018
0.024
0.035
0.060
0.017
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
130
120
110
100
90
130
120
110
100
90
ST203C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
ST203C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
Ø
Ø
Conduction angle
80
Conduction angle
70
80
60
70
50
60
180°
180°
40
30°
60°
90°
120°
50
30
30°
60°
200
90°
120°
20
40
0
50
100
150
200
250
0
100
300
400
500
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
130
120
110
100
90
130
120
110
100
90
ST203C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
ST203C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
Ø
Ø
80
80
Conduction period
Conduction period
70
70
60
60
50
50
60°
DC
DC
40
40
30°
90°
60°
120°
180°
30
30
30°
180°
120°
90°
20
20
0
50 100 150 200 250 300 350 400
0
100 200 300 400 500 600 700 800
Average On-State Current (A)
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94370
Revision: 30-Apr-08
ST203CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
1000
900
800
700
600
500
400
300
200
100
0
5500
5000
4500
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained
Initial TJ = 125 °C
180°
120°
90°
60°
30°
No voltage reapplied
Rated VRRM reapplied
RMS limit
4000
3500
Ø
3000
Conduction angle
ST203C..C Series
TJ = 125 °C
2500
ST203C..C Series
2000
0
50 100 150 200 250 300 350 400 450
0.01
0.1
1
Average On-State Current (A)
Pulse Train Duration (s)
Fig. 5 - On-State Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10 000
1000
100
1400
1200
1000
800
600
400
200
0
DC
180°
120°
90°
60°
30°
ST203C..C Series
RMS limit
Ø
Conduction period
TJ = 25 °C
ST203C..C Series
TJ = 125 °C
TJ = 125 °C
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
100 200 300 400 500 600 700 800
Instantaneous On-State Voltage (V)
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
Fig. 9 - On-State Voltage Drop Characteristics
1
0.1
5000
4500
4000
3500
3000
2500
2000
At any rated load condition and with
rated VRRM applied following surge
ST203C..C Series
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
0.01
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
ST203C..C Series
0.001
0.001
0.01
0.1
1
10
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Document Number: 94370
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
ST203CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
160
140
120
100
250
ITM = 500 A
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
ST203C..C Series
TJ = 125 °C
ITM = 300 A
200
150
100
50
ITM = 200 A
80
60
40
20
0
ITM = 100 A
ITM = 50 A
ST203C..C Series
TJ = 125 °C
0
0
20
40
60
80
100
0
20
40
60
80
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Reverse Recovery Current Characteristics
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
10 000
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
100
V
D = 80 % VDRM
400
500
50 Hz
50 Hz
200
1000
500
200
1000
100
1500
400
1500
1000
1000
2500
3000
5000
2500
3000
5000
ST203C..C Series
Sinusoidal pulse
TC = 55 °C
ST203C..C Series
Sinusoidal pulse
TC = 40 °C
tp
tp
10 000
10 000
100
100
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
10 000
1000
100
10 000
Snubber circuit
Rs = 22 Ω
Cs = 0.15 µF
VD = 80 % VDRM
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
200
50 Hz
400
1000
1500
400
100
100
1000
1500
1000
100
200
500
500
2500
2500
3000
3000
5000
5000
10 000
ST203C..C Series
Trapezoidal pulse
TC = 55 °C
ST203C..C Series
Trapezoidal pulse
TC = 40 °C
10 000
tp
tp
dI/dt = 50 A/µs
dI/dt = 50 A/µs
10
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Frequency Characteristics
www.vishay.com
6
For technical questions, contact: ind-modules@vishay.com
Document Number: 94370
Revision: 30-Apr-08
ST203CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
10 000
1000
100
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
50 Hz
100
400
VD = 80 % VDRM
400
100
200
1000
1500
200
1000
1000
500
500
2500
3000
1500
2500
3000
5000
5000
100
ST203C..C Series
Trapezoidal pulse
TC = 40 °C
ST203C..C Series
Trapezoidal pulse
10 000
10 000
T
C = 55 °C
tp
tp
dI/dt = 100 A/µs
dI/dt = 100 A/µs
10
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
100 000
100 000
10 000
1000
100
ST203C..C Series
Rectangular pulse
dI/dt = 50 A/µs
tp
10 000
1000
100
20 joules per pulse
10
20 joules per pulse
4
10
2
2
1
3
1
5
0.5
0.3
0.5
0.2
0.1
0.3
0.2
ST203C..C Series
Sinusoidal pulse
0.1
tp
10
10
10
100
1000
10 000
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
100
10
Rectangular gate pulse
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(a)
(b)
1
(1)
(2)
(3) (4)
VGD
IGD
Device: ST203C..C Series
0.1
Frequency limited by PG(AV)
0.1
0.001
0.01
1
10
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
Document Number: 94370
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
ST203CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
ST
20
3
C
12
C
H
H
1
-
P
1
2
3
4
5
6
7
8
9
10
11
1
2
3
4
5
6
7
8
9
-
-
-
-
-
-
-
-
-
Thyristor
Essential part number
3 = Fast turn-off
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
C = PUK case TO-200AB (A-PUK)
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
Reapplied dV/dt code (for tq test condition)
tq code
20
25
30
CK DK EK
-
-
tq (µs)
CJ DJ EJ FJ*
-
0 = Eyelet terminals
CH DH EH FH HH
(gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals
* Standard part number.
All other types available only on request.
(gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals
(gate and auxiliary cathode soldered leads)
3 = Fast-on terminals
(gate and auxiliary cathode soldered leads)
Critical dV/dt:
-
-
10
11
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
P = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95074
www.vishay.com
8
For technical questions, contact: ind-modules@vishay.com
Document Number: 94370
Revision: 30-Apr-08
Outline Dimensions
Vishay Semiconductors
TO-200AB (A-PUK)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
0.3 (0.01) MIN.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95074
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
相关型号：
ST203C10CDK0LP
Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, LEAD FREE, CERAMIC, APUK-3
VISHAY
ST203C10CDK0P
Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, LEAD FREE, CERAMIC, APUK-3
VISHAY
ST203C10CDK1LP
Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, LEAD FREE, CERAMIC, APUK-3
VISHAY
ST203C10CDK2LP
Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, LEAD FREE, CERAMIC, APUK-3
VISHAY
ST203C10CDK2P
Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, LEAD FREE, CERAMIC, APUK-3
VISHAY
ST203C10CDK3P
Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, LEAD FREE, CERAMIC, APUK-3
VISHAY
ST203C10CEH0
Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明