ST280C06C2L [VISHAY]

Silicon Controlled Rectifier, 960A I(T)RMS, 500000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB, APUK-2;
ST280C06C2L
型号: ST280C06C2L
厂家: VISHAY    VISHAY
描述:

Silicon Controlled Rectifier, 960A I(T)RMS, 500000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB, APUK-2

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中文:  中文翻译
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Bulletin I25159 rev. C 02/00  
ST280C..C SERIES  
PHASE CONTROL THYRISTORS  
Hockey Puk Version  
Features  
500A  
Center amplifying gate  
Metal case with ceramic insulator  
International standard case TO-200AB (A-PUK)  
TypicalApplications  
DC motor controls  
Controlled DC power supplies  
AC controllers  
case style TO-200AB (A-PUK)  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST280C..C  
Units  
500  
55  
A
°C  
@ T  
hs  
IT(RMS)  
960  
25  
A
@ T  
°C  
hs  
ITSM  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
7850  
8220  
308  
281  
A
A
I2t  
KA2s  
KA2s  
VDRM/VRRM  
400 to 600  
100  
V
t
typical  
µs  
q
TJ  
- 40 to 125  
°C  
1
www.irf.com  
ST280C..C Series  
Bulletin I25159 rev. C 02/00  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
VDRM/VRRM, max. repetitive  
VRSM , maximum non-  
IDRM/IRRM max.  
@ TJ = TJ max  
mA  
Type number Code  
peak and off-state voltage  
repetitive peak voltage  
V
V
04  
400  
600  
500  
700  
ST280C..C  
06  
30  
On-state Conduction  
Parameter  
ST280C..C  
Units Conditions  
IT(AV) Max. average on-state current  
@ Heatsink temperature  
500 (185)  
55 (85)  
960  
A
180° conduction, half sine wave  
°C  
double side (single side) cooled  
IT(RMS) Max. RMS on-state current  
DC @ 25°C heatsink temperature double side cooled  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
ITSM  
Max. peak, one-cycle  
7850  
8220  
6600  
6900  
308  
non-repetitive surge current  
A
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
281  
KA2s  
218  
200  
I2t  
Maximum I2t for fusing  
3080  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VT(TO) Low level value of threshold  
1
0.84  
0.88  
0.50  
0.47  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
voltage  
V
VT(TO) High level value of threshold  
2
(I > π x IT(AV)),TJ = TJ max.  
voltage  
rt1  
Low level value of on-state  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
mΩ  
slope resistance  
rt2  
High level value of on-state  
slope resistance  
(I > π x IT(AV)),TJ = TJ max.  
VTM  
IH  
Max. on-state voltage  
1.36  
600  
V
I = 1050A, TJ = 125°C, t = 10ms sine pulse  
pk p  
Maximum holding current  
mA  
TJ = 25°C, anode supply 12V resistive load  
IL  
Max. (typical) latching current  
1000 (300)  
Switching  
Parameter  
ST280C..C  
1000  
Units Conditions  
di/dt  
Max. non-repetitive rate of rise  
of turned-on current  
Gate drive 20V, 20, t 1µs  
r
A/µs  
TJ = TJ max, anode voltage 80% VDRM  
Gate current 1A, di /dt = 1A/µs  
g
t
Typical delay time  
1.0  
d
q
V
= 0.67% VDRM, TJ = 25°C  
d
µs  
I
TM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V  
t
Typical turn-off time  
100  
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs  
p
2
www.irf.com  
ST280C..C Series  
Bulletin I25159 rev. C 02  
Blocking  
Parameter  
ST280C..C  
500  
Units Conditions  
V/µs TJ = TJ max. linear to 80% rated VDRM  
mA TJ = TJ max, rated VDRM/VRRM applied  
dv/dt Maximum critical rate of rise of  
off-state voltage  
IDRM  
IRRM  
Max. peak reverse and off-state  
leakage current  
30  
Triggering  
Parameter  
Maximum peak gate power  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
ST280C..C  
Units Conditions  
PGM  
10.0  
2.0  
TJ = TJ max, t 5ms  
p
W
A
TJ = TJ max, f = 50Hz, d% = 50  
3.0  
TJ = TJ max, t 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
V
TJ = TJ max, t 5ms  
p
-VGM Maximum peak negative  
gate voltage  
5.0  
TYP.  
180  
MAX.  
-
TJ = - 40°C  
IGT  
DC gate current required  
to trigger  
90  
40  
150  
mA TJ = 25°C  
TJ = 125°C  
Max. required gate trigger/ cur-  
rent/ voltage are the lowest value  
which will trigger all units 12V  
anode-to-cathode applied  
-
-
2.9  
1.8  
1.2  
TJ = - 40°C  
VGT  
DC gate voltage required  
to trigger  
3.0  
-
V
TJ = 25°C  
TJ = 125°C  
Max. gate current/voltage not to  
trigger is the max. value which  
will not trigger any unit with rated  
VDRM anode-to-cathode applied  
IGD  
DC gate current not to trigger  
DC gate voltage not to trigger  
10  
mA  
V
TJ = TJ max  
VGD  
0.30  
Thermal and Mechanical Specification  
Parameter  
ST280C..C  
-40 to 125  
Units Conditions  
TJ  
T
Max. operating temperature range  
Max. storage temperature range  
°C  
-40 to 150  
stg  
RthJ-hs Max. thermal resistance,  
junction to heatsink  
0.17  
0.08  
DC operation single side cooled  
DC operation double side cooled  
K/W  
K/W  
RthC-hs Max. thermal resistance,  
case to heatsink  
0.033  
0.017  
4900  
(500)  
50  
DC operation single side cooled  
DC operation double side cooled  
F
Mounting force, 10%  
N
(Kg)  
g
wt  
Approximate weight  
Case style  
TO - 200AB (A-PUK)  
See Outline Table  
3
www.irf.com  
ST280C..C Series  
Bulletin I25159 rev. C 02/00  
RthJ-hs Conduction  
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)  
Sinusoidal conduction Rectangular conduction  
Conduction angle  
Units  
Conditions  
TJ = TJ max.  
Single Side Double Side Single Side Double Side  
180°  
120°  
90°  
0.016  
0.019  
0.024  
0.035  
0.060  
0.016  
0.019  
0.024  
0.035  
0.060  
0.011  
0.019  
0.026  
0.036  
0.060  
0.011  
0.019  
0.026  
0.037  
0.061  
K/W  
60°  
30°  
Ordering Information Table  
Device Code  
ST 28  
0
C
06  
C
1
7
1
2
5
6
8
3
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor  
Essential part number  
0 = Converter grade  
C = Ceramic Puk  
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)  
C = Puk Case TO-200AB (A-PUK)  
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)  
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)  
Critical dv/dt: None = 500V/µsec (Standard selection)  
8
-
L
= 1000V/µsec (Special selection)  
4
www.irf.com  
ST280C..C Series  
Bulletin I25159 rev. C 02  
Outline Table  
ANODE TO GATE  
CREEPAGE DISTANCE: 7.62 (0.30) MIN.  
STRIKE DISTANCE: 7.12 (0.28) MIN.  
19 (0.75)  
0.3 (0.01) MIN.  
DIA. MAX.  
13.7 / 14.4  
(0.54 / 0.57)  
0.3 (0.01) MIN.  
19 (0.75)  
GATE TERM. FOR  
1.47 (0.06) DIA.  
PIN RECEPTACLE  
DIA. MAX.  
Case Style TO-200AB (A-PUK)  
All dimensions in millimeters (inches)  
38 (1.50) DIA MAX.  
Quote between upper and lower  
pole pieces has to be considered  
after application of Mounting Force  
(see Thermal and Mechanical  
Specification)  
2 HOLES 3.56 (0.14) x  
1.83 (0.07) MIN. DEEP  
6.5 (0.26)  
4.75 (0.19)  
25° 5°  
42 (1.65) MAX.  
28 (1.10)  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
ST280C..C Series  
(Single Side Cooled)  
ST280C..C Series  
(Single Side Cooled)  
(DC) = 0.17 K/W  
R
R
(DC) = 0.17 K/W  
thJ-hs  
thJ-hs  
Conduction Period  
80  
Conduction Angle  
70  
80  
30°  
60  
60°  
30°  
70  
90°  
50  
60°  
60  
120°  
90°  
120°  
40  
180°  
50  
30  
180°  
D C  
500 600  
40  
20  
0
0
50 100 150 200 250 300 350  
AverageOn-stateCurrent(A)  
100 200 300 400  
AverageOn-stateCurrent(A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
5
www.irf.com  
ST280C..C Series  
Bulletin I25159 rev. C 02/00  
130  
130  
120  
110  
100  
90  
ST280C..C Series  
(Double Side Cooled)  
ST280C..C Series  
(Double Side Cooled)  
120  
110  
100  
90  
R
(DC) = 0.08 K/W  
R
(DC) = 0.08 K/W  
thJ-hs  
thJ-hs  
Conduction Period  
80  
80  
Conduction Angle  
70  
70  
30°  
30°  
60  
60  
60°  
60°  
90°  
90°  
50  
50  
120°  
120°  
40  
40  
180°  
180°  
30  
30  
D C  
800  
20  
20  
0
200  
400  
600  
1000  
0
100 200 300 400 500 600 700  
AverageOn-stateCurrent(A)  
AverageOn-stateCurrent(A)  
Fig. 3 - Current Ratings Characteristics  
Fig. 4 - Current Ratings Characteristics  
1300  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
D C  
180°  
120°  
90°  
60°  
30°  
180°  
120°  
90°  
60°  
30°  
RMS Limit  
RMS Limit  
Conduction Angle  
ST280C..C Series  
Conduction Period  
ST280C..C Series  
T
= 125°C  
T
= 125°C  
J
J
0
100 200 300 400 500 600 700  
AverageOn-stateCurrent(A)  
0
200  
400  
600  
800  
1000  
AverageOn-stateCurrent(A)  
Fig. 5- On-state Power Loss Characteristics  
Fig. 6- On-state Power Loss Characteristics  
8000  
7500  
7000  
6500  
6000  
5500  
5000  
4500  
4000  
3500  
3000  
7000  
6500  
6000  
5500  
5000  
4500  
4000  
3500  
3000  
Maximum Non Repetitive Surge Current  
Versus Pulse Train Duration. Control  
Of Conduction May Not Be Maintained.  
At Any Rated Load Condition And With  
Rated V  
Applied Following Surge.  
R R M  
Initial T = 125°C  
J
Initial T = 125°C  
J
@
@
60 Hz 0.0083  
50 Hz 0.0100  
s
s
No Voltage Reapplied  
Rated V  
Reapplied  
R R M  
ST280C..C Series  
10  
ST280C..C Series  
0.1  
0.01  
1
1
100  
Number Of Equal Amplitude Half Cycle Current Pulses (N)  
Pulse Train Duration (s)  
Fig. 7 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
Fig. 8 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
6
www.irf.com  
ST280C..C Series  
Bulletin I25159 rev. C 02/00  
10000  
1000  
100  
T
= 25°C  
J
T
= 125°C  
J
ST280C..C Series  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
Instantaneous On-state Voltage (V)  
Fig. 9 - On-state Voltage Drop Characteristics  
1
0.1  
Steady State Value  
= 0.17 K/W  
R
thJ-hs  
(Single Side Cooled)  
R
= 0.08 K/W  
thJ-hs  
(Double Side Cooled)  
(DC Operation)  
0.01  
ST280C..C Series  
0.001  
0.001  
0.01  
0.1  
1
10  
Square Wave Pulse Duration (s)  
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics  
100  
10  
1
(1) PGM  
(2) PGM  
(3) PGM  
(4) PGM  
=
=
=
=
10W, tp  
20W, tp  
40W, tp  
60W, tp  
=
=
=
=
4ms  
2ms  
1ms  
0.66ms  
Rectangular gate pulse  
a) Recommended load line for  
rated di/dt : 20V, 10ohms; tr<=1 µs  
b) Recommended load line for  
<=30% rated di/dt  
tr<=1 µs  
: 10V, 10ohms  
(a)  
(b)  
(1)  
(2) (3) (4)  
V GD  
IG D  
Device: ST280C..C Series Frequency Limited by PG(AV)  
0.1  
0.001  
0.01  
0.1  
1
10  
100  
Instantaneous Gate Current (A)  
Fig. 11 - Gate Characteristics  
7
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