ST303C04CCK1 [VISHAY]
Silicon Controlled Rectifier, 620000mA I(T), 400V V(DRM);
| 型号： | ST303C04CCK1 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 620000mA I(T), 400V V(DRM) |
| 文件： | 总10页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25186 rev. B 04/00
ST303C..L SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
515A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capibility
Low thermal impedance
High speed performance
TypicalApplications
Inverters
Choppers
case style TO-200AC (B-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST303C..L
Units
515
55
A
°C
@ T
hs
IT(RMS)
ITSM
I2t
995
25
A
@ T
°C
hs
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
7950
8320
316
289
A
A
KA2s
KA2s
V
DRM/VRRM
400 to 1200
10 to 30
V
t range (*)
q
µs
TJ
- 40 to 125
°C
(*) t = 10 to 20µs for 400 to 800V devices
q
t
= 15 to 30µs for 1000 to 1200V devices
q
Document Number: 93675
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1
ST303C..L Series
Bulletin I25186 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST303C..L
repetitive peak voltage
non-repetitive peak voltage
V
V
04
08
10
12
400
800
1000
1200
500
900
1100
1300
50
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
100µs
5660
2830
1490
540
50
180oel
50Hz
400Hz
1130
1010
950
820
1800
1850
1540
1570
4990
2420
A
V
1000Hz
680
230
50
530
140
50
1560
690
50
1300
510
50
1220
390
50
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state currentdi/dt
VDRM
VDRM
V DRM
50
40
50
55
-
-
-
-
A/µs
Heatsink temperature
40
55
40
55
°C
Equivalent values for RC circuit
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
ST303C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
515 (190)
55 (85)
995
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
ITSM
Max. peak, one half cycle,
non-repetitive surge current
7950
8320
6690
7000
316
A
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
289
KA2s
224
204
I2√t
Maximum I2√t for fusing
3160
KA2√s t = 0.1 to 10ms, no voltage reapplied
Document Number: 93675
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2
ST303C..L Series
Bulletin I25186 rev. B 04/00
On-state Conduction
Parameter
ST303C..L Units Conditions
VTM
Max. peak on-state voltage
2.16
1.44
ITM= 1255A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
voltage
VT(TO)2 High level value of threshold
voltage
1.48
0.57
0.56
(I > π x IT(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
t1
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
t
IH
IL
Maximum holding current
600
TJ = 25°C, IT > 30A
mA
Typical atching current
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST303C..L Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
T
J = TJ max, VDRM = rated VDRM
1000
A/µs
ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
0.83
d
Resistive load Gate pulse: 10V, 5Ω source
µs
Min Max
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
t
Max. turn-off time (*)
q
10
30
VR = 50V, t = 500µs, dv/dt: see table in device code
p
(*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices.
q
q
Blocking
Parameter
ST303C..L Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
50
V/µs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST303C..L Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max, f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
T
J = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
Document Number: 93675
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3
ST303C..L Series
Bulletin I25186 rev. B 04/00
Thermal and Mechanical Specification
Parameter
ST303C..L
Units Conditions
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
J
°C
T
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.11
0.05
DC operation single side cooled
K/W
K/W
DC operation double side cooled
RthC-hs Max. thermal resistance,
case to heatsink
0.011
0.005
9800
(1000)
250
DC operation single side cooled
DC operation double side cooled
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AC (B-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
60°
30°
Ordering Information Table
Device Code
ST 30
3
C
12
L
H
K
1
2
1
2134-5 TC3EVhos==lystareFC4igsnaettsorictarotlmudpre5ican:rCPotoufnfdkue6mxb1e0r07= V
8
9
10
RRM76-(SLRee=eaVPpopulktiaeCgdeadsRvea/dtTitnOgco-T2da0eb0l(eAf)oCr t(B-PUK)
dv/dt - tq combinations available
dv/dt (V/µs) 20 50 100 200 400
CN DN EN FN * HN
-8tetst condition)
q
t (µs)
10
12
15
20
-9c0o=deEyelet term. (Gate and Aux. Cathode Unsoldered Leads) q
q
CM DM EM FM HM
CL DL EL FL * HL
CK DK EK FK * HK
up to 800V
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
t (µs)
15
18
20
25
30
CL
CP DP
CK DK EK FK * HK
CJ
--
--
--
--
--
--
--
q
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
only for
1000/1200V
DJ
EJ FJ * HJ
None = 500V/µsec (Standard value)
10
--
DH EH FH HH
L
= 1000V/µsec (Special selection)
*TStandard part number.
All other types available only on request.
Document Number: 93675
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4
ST303C..L Series
Bulletin I25186 rev. B 04/00
Outline Table
34 (1.34) DIA. MAX.
TWO PLACES
0.7 (0.03) MIN.
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
Case Style TO-200AC (B-PUK)
36.5 (1.44)
QAlul odtiemebnestwioenesninupmpiellirmaentedrslo(winecrhes)
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
1 3 0
1 2 0
1 1 0
1 0 0
9 0
1 30
ST 303C ..L S erie s
(Sin gle S id e C oo le d )
S T 303C ..L S eries
(S in g le Sid e C oo le d )
1 20
1 10
1 00
9 0
R
(D C ) = 0.11 K /W
R
(D C ) = 0.11 K /W
th J-hs
th J- hs
8 0
C ondu ction Period
C onduction Angle
7 0
8 0
30 °
6 0
60°
7 0
90°
30°
5 0
1 20°
180°
60°
6 0
4 0
9 0°
120 °
5 0
3 0
18 0°
4 00
D C
50 0
2 0
4 0
0
1 00
2 00
3 0 0
60 0
0
50
1 00
15 0
2 00
2 50
3 0 0
35 0
A ve ra g e O n -sta te C u rr en t (A)
Av era g e O n -sta te C urr en t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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Document Number: 93675
ST303C..L Series
Bulletin I25186 rev. B 04/00
1 3 0
1 3 0
1 2 0
1 1 0
1 0 0
90
ST 30 3C ..L Se rie s
(D ou b le S id e C oo led )
1 2 0
1 1 0
1 0 0
9 0
R
(D C ) = 0.05 K /W
th J- hs
C onduction Period
80
8 0
70
30°
7 0
60
60 °
6 0
90 °
30°
50
1 20°
5 0
40
180°
4 0
30
D C
80 0
3 0
20
0
0
1
1 0 0
20 0
70 0
0
20 0
40 0
60 0
1 0 00
1 2 00
Av era g e O n - sta te C u rr en t (A)
A ve ra g e O n -sta te C urre n t (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
2 0 00
1 8 00
1 6 00
1 4 00
1 2 00
1 0 00
80 0
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
180°
120°
9 0°
6 0°
3 0°
DC
180°
120°
90°
60°
30°
R M S Lim it
RMS Limit
C ondu ction P eriod
ST303C..L Series
Con duction Angle
ST 30 3C ..L S e rie s
60 0
600
40 0
400
T
= 125°C
J
20 0
T
= 125 °C
J
200
0
0
10 0 20 0 3 0 0 40 0 5 0 0 6 0 0 7 00 8 00
0
200
400
600
800
1000 1200
Av era g e O n - sta te C u rre n t ( A)
Average On-state Current (A)
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
7000
6500
6000
5500
5000
4500
4000
3500
3000
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
At Any Rated Load Condition And With
M a x im u m N on R ep e titiv e Su rg e C u rre n t
V er su s P u lse T ra in D ura tion . C on tro l
O f C o n d u c tion M a y N ot B e M a in ta in ed .
Rated V
Applied Following Surge.
RRM
In itial T = 125°C
J
In itia l T
=
1 25° C
N o V o lta g e R e a pp lie d
R a te d R e a p p lied
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
V
RRM
ST303C..L Series
S T 303 C ..L S eries
0.01
0.1
1
10
100
Numb er O f Equa l Amplitud e H alf C ycle C urrent Pulses (N)
P u ls e Tr a in D u ra tio n (s)
Fig. 7 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Fig. 8 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
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Document Number: 93675
ST303C..L Series
Bulletin I25186 rev. B 04/00
10000
1000
100
1
S tea d y S ta te V a lu e
0.11 K /W
(S in gle S id e C o oled )
0.05 K /W
R
=
th J- hs
R
=
th J-hs
0 .1
(D ou b le S id e C o oled )
(D C O p era tio n )
T
T
= 25°C
J
= 125°C
0.0 1
J
S T 303C ..L S erie s
ST303C..L Series
0 .0 01
0
1
2
3
4
5
6
7
8
0 .0 01
0 .0 1
0 .1
1
1 0
Sq u a re W a ve P u lse D u ra tio n (s )
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
18 0
320
300
280
260
240
I
= 1000 A
500 A
300 A
200 A
17 0
16 0
15 0
14 0
13 0
12 0
11 0
10 0
9 0
8 0
7 0
6 0
5 0
I
= 1000 A
TM
TM
500 A
300 A
200 A
100 A
100 A
220
200
180
160
140
120
100
80
S T 30 3C ..L S e rie s
ST303C..L Series
= 125 °C
T
=
125 ° C
J
T
J
4 0
3 0
10 20 30 40 50 60 70 80 90 100
10
2 0
3 0
4 0
50
6 0
7 0 8 0
9 0 10 0
Rate Of Fall Of On-state Current - di/dt (A/µs)
R a te O f F a ll O f F orw a rd C u rre n t - d i/d t (A /µ s)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
1 E4
1 E3
1 E2
100
50 Hz
200
400
100
50 H z
500
200
400
1000
500
1000
1500
Sn ubber circuit
= 10 ohms
1500
2000
2500
3000
Sn ubber circu it
= 10 ohms
R
C
s
2000
R
=
=
0.47 µF
80%
s
s
s
C
V
=
=
0.47 µ F
80% V
V
V
DR M
D
2500
3000
DR M
D
ST303C..L Series
Sinusoida l pulse
= 40°C
ST303C..L Series
Sinusoida l p ulse
= 55°C
T
t p
C
tp
T
C
1E1
1E4 E1
1E4
1 E1
1 E2
1 E3
1 E2
1 E3
1 E4
P u lse Ba se w id th (µ s)
P u lse Ba sew id th (µ s)
Fig. 13 - Frequency Characteristics
Document Number: 93675
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7
ST303C..L Series
Bulletin I25186 rev. B 04/00
1E 4
Snu bber circuit
Snub ber circuit
R
C
= 10 oh ms
= 0.47 µF
s
R
C
V
= 10 ohms
= 0.47 µF
s
s
s
V
= 80%
V
= 80%
V
D
DR M
DR M
D
50 Hz
100
200
400
50 H z
100
200
500
400
1E 3
1E 2
1E 1
500
1000
1000
1500
1500
2000
2000
2500
2500
3000
ST303C..L Series
Trap ezoid al p ulse
ST303C ..L Series
Tra pezoidal pulse
3000
T
= 40°C
T
=
55°C
C
C
tp
tp
di/d t = 50A/µs
di/dt = 50A/µs
1 E1
1 E2
1 E3
1E14E41 E11E1
1E 2
1 E3
1E4
Pu lse B a sew id th (µ s)
P u lse Ba se w id th (µ s)
Fig. 14 - Frequency Characteristics
1E4
1E3
1E2
1E1
Snub ber circuit
Snu bber circuit
R
C
= 10 ohms
= 0.47 µF
R
C
= 10 ohms
s
s
=
0.47 µF
s
s
V
= 80%
V
V
=
80%
V
DRM
D
DR M
D
50 Hz
100
200
50 Hz
100
200
400
500
400
500
1000
1000
1500
1500
2000
2000
2500
3000
2500
3000
ST303C..L Series
Tra pezoid al p ulse
= 55°C
ST303C ..L Series
Trapezoidal pulse
T
T
= 40°C
C
C
tp
tp
di/dt = 100A/µs
di/dt = 100A/µs
1E1
1E14
1E2
1 E3
1E4
1 E1
1 E2
1 E3
Pu lse B a sew id th (µ s)
P u lse B ase w id th (µ s)
Fig. 15 - Frequency Characteristics
1E 5
ST303C ..L Series
Rectangula r pulse
di/dt = 50A/µs
tp
1E 4
1E 3
1E 2
1E 1
20 joules per pulse
20 joules per pulse
10
10
5
3
2
5
1
3
2
0.5
0.4
1
0.5
0.4
ST303C ..L Series
Sin usoidal pulse
tp
1E1
1E2
1E3
1E14E
1E 1
1 E2
1 E3
1E4
P u lse B ase w id th (µ s)
Pu lse B a se w id th (µs)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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Document Number: 93675
8
ST303C..L Series
Bulletin I25186 rev. B 04/00
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 20ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(a)
(b)
(2)
(1)
(3) (4)
VGD
IGD
Device: ST303C..L Series Frequency Limited by PG(AV)
0.1 10 100
0.1
0.001
0.01
1
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
Document Number: 93675
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9
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 99901
Revision: 08-Mar-07
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1
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