ST303C04LCM2LP [VISHAY]
Silicon Controlled Rectifier, 515000mA I(T), 400V V(DRM), TO-200AC, ROHS COMPLIANT, METAL, BPUK-2;
| 型号： | ST303C04LCM2LP |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 515000mA I(T), 400V V(DRM), TO-200AC, ROHS COMPLIANT, METAL, BPUK-2 |
| 文件： | 总10页 (文件大小：349K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST303CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
RoHS
COMPLIANT
• Guaranteed high dI/dt
• International standard case TO-200AC (B-PUK)
• High surge current capability
• Low thermal impedance
TO-200AC (B-PUK)
• High speed performance
• Lead (Pb)-free
• Designed and qualified for industrial level
PRODUCT SUMMARY
TYPICAL APPLICATIONS
• Inverters
IT(AV)
515 A
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
515
UNITS
A
°C
A
IT(AV)
Ths
55
995
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
7950
A
8320
316
kA2s
289
V
DRM/VRRM
400 to 1200
10 to 30
- 40 to 125
V
tq
Range
µs
°C
TJ
Note
• tq = 10 to 20 µs for 400 to 800 V devices
tq = 15 to 30 µs for 1000 to 1200 V devices
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM
V
RSM, MAXIMUM
IDRM/IRRM MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
REPETITIVE PEAK VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
mA
04
08
10
12
400
800
500
900
ST303C..L
50
1000
1200
1100
1300
Document Number: 94374
Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
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1
ST303CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
Vishay High Power Products
CURRENT CARRYING CAPABILITY
ITM
ITM
ITM
FREQUENCY
UNITS
100 µs
5660
180° el
180° el
1800
50 Hz
1130
1010
680
950
820
530
140
1540
1570
1300
510
4990
2420
1220
390
400 Hz
1850
1560
690
2830
1490
540
A
V
1000 Hz
2500 Hz
230
Recovery voltage VR
Voltage before turn-on VD
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
50
VDRM
50
50
VDRM
-
50
VDRM
-
A/µs
°C
40
55
40
55
40
55
10/0.47
10/0.47
10/0.47
Ω/µF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
IT(AV)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
VALUES
UNITS
515 (190)
55 (85)
995
A
Maximum average on-state
current at heatsink temperature
°C
Maximum RMS on-state current
IT(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
7950
8320
6690
7000
316
No voltage
reapplied
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
289
Maximum I2t for fusing
I2t
kA2s
224
100 % VRRM
reapplied
204
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
3160
kA2√s
ITM = 1255 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
Maximum peak on-state voltage
VTM
2.16
V
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
1.44
1.48
0.57
0.56
600
VT(TO)2
rt1
rt2
IH
IL
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
mΩ
TJ = 25 °C, IT > 30 A
mA
Typical latching current
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
1000
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Document Number: 94374
Revision: 25-Jul-08
ST303CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
Vishay High Power Products
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned on current
TJ = TJ maximum, VDRM = rated VDRM
ITM = 2 x dI/dt
dI/dt
td
1000
A/µs
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source
Typical delay time
0.83
µs
TJ = TJ maximum,
minimum
maximum
10
30
Maximum turn-off time (1)
Note
tq
I
TM = 550 A, commutating dI/dt = 40 A/µs
R = 50 V, tp = 500 µs, dV/dt: See table in device code
V
(1)
tq = 10 to 20 µs for 400 to 800 V devices; tq = 15 to 30 µs for 1000 to 1200 V devices
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TJ = TJ maximum, linear to 80 % VDRM
higher value available on request
,
Maximum critical rate of rise of off-state voltage
dV/dt
500
V/µs
IRRM
IDRM
,
Maximum peak reverse and off-state leakage current
TJ = TJ maximum, rated VDRM/VRRM applied
50
mA
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
60
10
10
20
5
TJ = TJ maximum, f = 50 Hz, d% = 50
W
A
Maximum average gate power
PG(AV)
IGM
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
+ VGM
- VGM
IGT
TJ = TJ maximum, tp ≤ 5 ms
V
200
3
mA
V
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
VGT
IGD
20
0.25
mA
V
TJ = TJ maximum, rated VDRM applied
VGD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.11
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
0.05
K/W
0.011
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
RthC-hs
0.005
9800
(1000)
N
(kg)
Approximate weight
Case style
250
g
See dimensions - link at the end of datasheet TO-200AC (B-PUK)
Document Number: 94374
Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
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3
ST303CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
Vishay High Power Products
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
130
120
110
100
90
130
120
110
100
90
ST303C . . L Se r ie s
ST303C . . L Se rie s
(Single Side Cooled)
(Double Side Cooled)
R
(DC) = 0.05 K/W
R
(DC) = 0.11 K/W
thJ-hs
thJ-hs
Conduction Angle
Conduction Angle
90°
80
80
30°
70
60°
70
60
30°
60°
120°
90°
60
50
180°
120°
180°
50
40
40
30
0
50 100 150 200 250 300 350
Average On-state Current (A)
0
100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
130
120
110
100
90
130
120
110
100
90
ST303C..LSeries
ST303C . . L Se r ie s
(Single Side Cooled)
(Double Side Cooled)
R (DC) = 0.11 K/W
thJ-hs
R
(DC) = 0.05 K/W
thJ-hs
Conduction Period
80
80
Conduction Period
70
70
30°
60
60
60°
90°
30°
50
50
120°
180°
60°
40
40
90°
120°
30
30
180°
DC
DC
20
20
0
100 200 300 400 500 600
Average On-state Current (A)
0
200 400 600 800 1000 1200
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
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Document Number: 94374
Revision: 25-Jul-08
ST303CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
Vishay High Power Products
2000
1800
1600
1400
1200
1000
800
8000
7500
7000
6500
6000
5500
5000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
180°
120°
90°
Initial T = 125°C
60°
J
30°
No Voltage Reapplied
Ra t e d V
Re a p p lie d
RRM
RM S Lim it
Conduction Angle
600
4500
400
4000
ST303C..L Series
T = 125°C
J
200
3500 ST303C . . L Se rie s
0
3000
0.01
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
0.1
Pulse Train Duration (s)
1
Fig. 5 - On-State Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
2600
10000
DC
180°
120°
90°
2400
2200
2000
1800
1600
1400
1200
1000
800
60°
30°
1000
100
RM S Lim it
T = 25°C
J
Conduction Period
ST303C . . L Se r ie s
T = 125°C
J
600
400
200
0
ST303C .. L Se r ie s
T = 1 25° C
J
0
200 400 600 800 1000 1200
Average On-state Current (A)
0
1
2
3
4
5
6
7
8
InstantaneousOn-state Voltage (V)
Fig. 6 - On-state Power Loss Characteristics
Fig. 9 - On-state Voltage Drop Characteristics
7000
1
At Any Rated Load Condition And With
Steady State Value
Rated V
RRM
Applied Following Surge.
6500
6000
5500
5000
4500
4000
3500
3000
R
= 0.11 K/W
thJ-hs
(Single Side Cooled)
= 0.05 K/W
Initial T = 125°C
J
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
R
thJ-hs
0.1
0.01
(Double Side Cooled)
(DC Operation)
ST303C . . L Se r ie s
ST303C..L Series
0.001
1
10
100
0.001
0.01
Sq u a re Wa v e Pu lse D u r a t io n ( s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
0.1
1
10
NumberOf Equal Amplitude Half Cycle Current Pulses(N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Document Number: 94374
Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
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5
ST303CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
Vishay High Power Products
180
170
160
150
140
130
120
110
100
90
320
I
= 1000 A
500 A
I
= 1000 A
500 A
300
280
260
240
220
200
180
160
140
120
100
80
TM
TM
300 A
300 A
200 A
200 A
100 A
100 A
80
70
ST3 03C . . L Se rie s
J
60
50
40
30
ST303C..L Series
T = 125 °C
T = 125 ° C
J
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
1E4
100
50 Hz
200
400
100
50 Hz
200
500
400
1000
500
1000
1500
1500
Snub ber circ uit
1E3
Sn u b b e r c ir c u it
R
C
V
= 10 o hm s
= 0.47 µF
s
s
D
2000
1E2
R
C
V
= 10 o hm s
= 0.47 µF
= 80%V
2000
2500
3000
s
s
D
= 80%V
DRM
2500
3000
DRM
ST30 3 C . . L Se r ie s
Sin u so id a l p u lse
= 40 ° C
ST3 0 3C . . L Se rie s
Sin u so id a l p u lse
= 55 ° C
T
tp
T
C
tp
C
1E2
1E1
1E1
1E2
1E3
1E4
1E3
1E
Pulse Ba se w id t h (µs)
Pulse Ba sew id t h (µs)
Fig. 13 - Frequency Characteristics
1E4
1E3
1E2
1E1
Snubber circuit
Sn u b b e r c ir c u it
R
C
V
= 10 o h m s
= 0.47 µF
= 80%V
s
s
D
R
= 10 o h m s
= 0.47 µF
s
C
s
DRM
V
= 80%V
DRM
50 Hz
D
100
200
50 Hz
100
400
200
400
500
500
1000
1000
1500
1500
2000
2500
2000
2500
3000
ST3 0 3C . . L Se rie s
Trapezoidal pulse
= 55°C
ST3 0 3 C . . L Se rie s
Trapezoidal pulse
3000
T
T
= 40 ° C
C
C
tp
tp
di/dt = 50A/µs
di/dt = 50A/µs
1E1
1E2
Pulse Ba se w id t h (µs)
1E3
1E4
1E1
1E2
Pulse Ba se w id t h (µs)
1E3
1E4
Fig. 14 - Frequency Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94374
Revision: 25-Jul-08
ST303CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
Vishay High Power Products
1E4
1E3
1E2
1E1
Snubber circuit
Snubber circ uit
R
C
V
= 10 o h m s
R
= 10 o hm s
= 0.47 µF
= 80%V
s
s
D
s
= 0.47 µF
C
s
V
= 80%V
DRM
DRM
D
50 Hz
50 Hz
100
200
100
200
400
400
500
500
1000
1000
1500
1500
2000
2000
1E2
2500
3000
2500
3000
ST303C..LSeries
Trapezoidal pulse
ST3 0 3C . . L Se rie s
Trapezoidal pulse
T = 55 ° C
T
= 40°C
C
C
tp
tp
di/dt = 100A/µs
di/dt = 100A/µs
1E1
1E3
1E4
1E1
1E2
1E3 1E4
Pulse Ba sew id t h (µs)
Pulse Ba se w id t h (µs)
Fig. 15 - Frequency Characteristics
1E5
ST3 0 3C . . L Se rie s
Rectangular pulse
di/dt = 50A/µs
tp
1E4
1E3
1E2
1E1
20 joulesper pulse
20 joules per pulse
10
10
5
3
2
5
3
1
2
0.5
0.4
1
0.5
0.4
ST3 0 3C . . L Se rie s
Sin u so id a l p u lse
tp
1E1
1E2
1E3
1E4
1E1
1E2
Pulse Ba sew idth (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
1E3
1E4
Pulse Ba sew id t h (µs)
100
10
1
Rectangulargate pulse
(1) PGM= 10W, tp = 20ms
a)Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1µs
b)Recommended load line for
<=30%rated di/ dt : 10V, 10ohms
tr<=1µs
(2) PGM= 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(a)
(b)
(2)
(3) (4)
(1)
VGD
IGD
Device: ST303C..LSeries Frequency Limited by PG(AV)
0.1 10 100
InstantaneousGateCurrent (A)
0.1
0.001
0.01
1
Fig. 17 - Gate Characteristics
Document Number: 94374
Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
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7
ST303CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
ST
30
3
C
12
L
H
K
1
-
P
1
2
3
4
5
6
7
8
9
10
11
1
2
3
4
5
-
-
-
-
-
Thyristor
Essential part number
3 = Fast turn-off
C = Ceramic PUK
Voltage code x 100 = VRRM
(see Voltage Ratings table)
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
6
7
8
9
-
-
-
-
C = PUK case TO-200AC (B-PUK)
10
12
15
20
CN DN EN FN* HN
CM DM EM FM HM
CL DL EL FL* HL
CK DK EK FK* HK
tq (µs)
Reapplied dV/dt code (for tq test condition)
tq code
up to 800 V
0 = Eyelet terminals
(gate and auxiliary cathode unsoldered leads)
15
18
20
25
30
CL
-
-
-
-
tq (µs)
CP DP
-
-
-
CK DK EK FK* HK
CJ DJ EJ FJ* HJ
only for
1000/1200 V
1 = Fast-on terminals
-
DH EH FH HH
(gate and auxiliary cathode unsoldered leads)
* Standard part number.
All other types available only on request.
2 = Eyelet terminals
(gate and auxiliary cathode soldered leads)
3 = Fast-on terminals
(gate and auxiliary cathode soldered leads)
-
-
Critical dV/dt:
None = 500 V/µs (standard value)
10
11
L = 1000 V/µs (special selection)
P = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95076
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94374
Revision: 25-Jul-08
Outline Dimensions
Vishay Semiconductors
TO-200AC (B-PUK)
DIMENSIONS in millimeters (inches)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
34 (1.34) DIA. MAX.
2 places
0.7 (0.03) MIN.
27 (1.06) MAX.
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
36.5 (1.44)
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95076
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
ST303C04LCM3
Silicon Controlled Rectifier, 995A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3
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ST303C04LCM3L
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