ST330C08C2 [VISHAY]
Silicon Controlled Rectifier, 1420A I(T)RMS, 720000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB, METAL, EPUK-4;
| 型号： | ST330C08C2 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 1420A I(T)RMS, 720000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB, METAL, EPUK-4 栅 栅极 |
| 文件： | 总9页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25155 rev. D 04/03
ST330C..C SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
Center amplifying gate
720A
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
case style TO-200AB (E-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST330C..C
720
Units
A
@ T
55
°C
hs
IT(RMS)
1420
25
A
@ T
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
9000
9420
405
A
A
I2t
KA2s
KA2s
370
VDRM/VRRM
400 to 1600
100
V
t
typical
µs
q
TJ
- 40 to 125
°C
Document Number: 93733
www.vishay.com
1
ST330C..C Series
Bulletin I25155 rev. D 04/03
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number Code
peak and off-state voltage
repetitive peak voltage
V
V
04
08
400
500
800
900
ST330C..C
12
14
16
1200
1400
1600
1300
1500
1700
50
On-state Conduction
Parameter
ST330C..C
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
720 (350)
55 (75)
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
1420
9000
9420
7570
7920
405
DC @ 25°C heatsink temperature double side cooled
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
non-repetitive surge current
A
100% VRRM
reapplied
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
No voltage
reapplied
100% VRRM
reapplied
370
KA2s
287
262
I2√t
Maximum I2√t for fusing
4050
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Low level value of threshold
1
0.91
0.92
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
slope resistance
0.58
0.57
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
1.96
600
V
I = 1810A, TJ = TJ max, t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
Switching
Parameter
ST330C..C
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
Typical turn-off time
1.0
d
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
t
100
q
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
Document Number: 93733
www.vishay.com
2
ST330C..C Series
Bulletin I25155 rev. D 04/03
Blocking
Parameter
ST330C..C
500
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM
IDRM
Max. peak reverse and off-state
leakage current
50
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST330C..C
Units Conditions
PGM
10.0
2.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
-
TJ = - 40°C
TJ = 25°C
200
100
50
IGT
DC gate current required
to trigger
mA
V
200
Max. required gate trigger/ cur-
TJ = 125°C
TJ = - 40°C
TJ = 25°C
TJ = 125°C
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
-
-
2.5
1.8
1.1
VGT
DC gate voltage required
to trigger
3.0
-
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
Thermal and Mechanical Specification
Parameter
ST330C..C
Units Conditions
°C
TJ
T
Max.operatingtemperaturerange
Max.storagetemperaturerange
-40 to 125
-40 to 150
stg
RthJ-hs Max.thermalresistance,
junctiontoheatsink
0.09
0.04
DCoperationsinglesidecooled
DCoperationdoublesidecooled
K/W
K/W
RthC-hs Max.thermalresistance,
casetoheatsink
0.02
0.01
9800
(1000)
83
DCoperationsinglesidecooled
DCoperationdoublesidecooled
F
Mountingforce,±10%
N
(Kg)
g
wt
Approximateweight
Casestyle
TO-200AB(E-PUK)
SeeOutlineTable
Document Number: 93733
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3
ST330C..C Series
Bulletin I25155 rev. D 04/03
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.012
0.014
0.017
0.025
0.043
0.011
0.012
0.015
0.022
0.036
0.008
0.014
0.019
0.026
0.043
0.007
0.013
0.017
0.023
0.037
60°
30°
Ordering Information Table
Device Code
ST 33
0
C
16
C
1
7
8
1
2
5
6
3
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
C = Puk Case TO-200AB (E-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
Document Number: 93733
www.vishay.com
4
ST330C..C Series
Bulletin I25155 rev. D 04/03
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.
25.3 (0.99)
0.3 (0.01) MIN.
DIA. MAX.
14.1 / 15.1
(0.56 / 0.59)
0.3 (0.01) MIN.
GATE TERM. FOR
25.3 (0.99)
DIA. MAX.
1.47 (0.06) DIA.
PIN RECEPTACLE
40.5 (1.59) DIA. MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches)
25°± 5°
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
130
120
110
100
90
130
120
110
100
90
ST330C..C Series
(Single Side Cooled)
ST330C..C Series
(Single Side Cooled)
R
(DC) = 0.09 K/W
R
(DC) = 0.09 K/W
thJ-hs
thJ-hs
Conduction Period
80
Conduction Angle
70
30°
60
60°
90°
50
120°
60°
40
180°
80
30°
90°
120°
30
180°
DC
20
0
70
100 200 300 400 500 600 700 800 900
Average On-state Current (A)
0
50 100 150 200 250 300 350 400
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
Document Number: 93733
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5
ST330C..C Series
Bulletin I25155 rev. D 04/03
130
130
120
110
100
90
ST330C..C Series
(Double Side Cooled)
ST330C..C Series
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.04 K/W
R
(DC) = 0.04 K/W
thJ-hs
thJ-hs
80
Conduction Period
80
Conduction Angle
70
30°
70
60
60°
60
50
90°
30°
50
60°
120°
40
90°
180°
120°
40
30
180°
30
20
DC
20
10
0
200
400
600
800
1000
0
200 400 600 800 1000 1200 1400 1600
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1400
1200
1000
800
600
400
200
0
1800
1600
1400
1200
1000
800
600
400
200
0
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
RMS Lim it
30°
RM S Lim it
Conduction Angle
ST330C..C Series
Conduction Period
ST330C..C Series
T = 125°C
T = 125°C
J
J
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
0
200 400 600 800 1000 1200
Average On-state Current (A)
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
8000
7500
7000
6500
6000
5500
5000
4500
9000
8500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
RRM
Applied Following Surge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST330C..C Series
4000 ST330C..C Series
3500
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Document Number: 93733
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6
ST330C..C Series
Bulletin I25155 rev. D 04/03
10000
1000
100
T = 25°C
J
T = 125°C
J
ST330C..C Series
0
1
2
3
4
5
6
7
InstantaneousOn-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
0.1
Steady State Value
= 0.09 K/W
R
thJ-hs
(Single Side Cooled)
= 0.04 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
0.01
ST330C..C Series
1
0.001
0.001
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(a)
(b)
(1) (2) (3) (4)
VGD
IGD
Frequency Limited by PG(AV)
Device: ST330C..C Series
0.1
0.1
0.001
0.01
1
10
100
Inst a nt a ne o us Ga t e C urre nt ( A)
Fig. 11 - Gate Characteristics
Document Number: 93733
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7
ST330C..C Series
Bulletin I25155 rev. D 04/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
04 /03
Document Number: 93733
www.vishay.com
8
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
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1
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