ST330C12C3PBF [VISHAY]
Silicon Controlled Rectifier, 1420A I(T)RMS, 720000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, EPUK-2;
| 型号： | ST330C12C3PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 1420A I(T)RMS, 720000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, EPUK-2 |
| 文件： | 总8页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST330CPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 720 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
RoHS
• International standard case TO-200AB (E-PUK)
• Lead (Pb)-free
COMPLIANT
• Designed and qualified for industrial level
TO-200AB (E-PUK)
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
IT(AV)
720 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
720
UNITS
A
°C
A
IT(AV)
Ths
55
1420
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
9000
A
9420
405
kA2s
370
VDRM/VRRM
400 to 1600
100
V
tq
Typical
µs
°C
TJ
- 40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM REPETITIVE PEAK
V
RSM, MAXIMUM
IDRM/IRRM MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
AND OFF-STATE VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
mA
04
08
12
14
16
400
800
500
900
ST330C..C
50
1200
1400
1600
1300
1500
1700
Document Number: 94407
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST330CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 720 A
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
720 (350)
55 (75)
1420
9000
9420
7570
7920
405
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
IT(AV)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
370
Maximum I2t for fusing
I2t
kA2s
287
100 % VRRM
reapplied
262
Maximum I2√t for fusing
I2√t
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
4050
0.91
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
V
0.92
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
0.58
mΩ
V
rt2
0.57
VTM
IH
Ipk = 1810 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.96
Maximum holding current
600
TJ = 25 °C, anode supply 12 V resistive load
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
dI/dt
1000
1.0
A/µs
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical delay time
Typical turn-off time
td
tq
µs
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
100
V
R = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
500
50
V/µs
mA
Maximum peak reverse and
off-state leakage current
IRRM
,
IDRM
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94407
Revision: 11-Aug-08
ST330CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 720 A
Vishay High Power Products
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
TJ = TJ maximum, tp ≤ 5 ms
10.0
2.0
3.0
20
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp ≤ 5 ms
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ VGM
- VGM
TJ = TJ maximum, tp ≤ 5 ms
V
5.0
TJ = - 40 °C
TJ = 25 °C
200
100
50
-
200
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate trigger/
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.5
1.8
1.1
-
VGT
3.0
-
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.09
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
0.04
K/W
0.02
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
RthC-hs
0.01
9800
(1000)
N
(kg)
Approximate weight
Case style
83
g
See dimensions - link at the end of datasheet
TO-200AB (E-PUK)
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.012
0.014
0.017
0.025
0.043
0.011
0.012
0.015
0.022
0.036
0.008
0.014
0.019
0.026
0.043
0.007
0.013
0.017
0.023
0.037
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 94407
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST330CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 720 A
Vishay High Power Products
130
130
120
ST330C..C Series
ST330C . . C Se rie s
(Double Side Cooled)
(Single Side Cooled)
120
110
100
90
110
100
90
80
70
60
50
40
30
20
10
R
(DC) = 0.04 K/W
R
(DC) = 0.09 K/W
thJ-hs
thJ-hs
Conduction Period
Conduction Angle
30°
60°
30°
60°
90°
90°
120°
120°
180°
180°
80
DC
70
0
200 400 600 800 10001200 1400 1600
Average On-state Current (A)
0
50 100 150 200 250 300 350 400
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
130
120
110
100
90
1400
1200
1000
800
600
400
200
0
ST330C . . C Se r ie s
180°
120°
90°
(Single Side Cooled)
R
(DC) = 0.09 K/W
thJ-hs
60°
RM S Lim it
30°
Conduction Period
80
70
60
Conduction Angle
ST330C . . C Se r ie s
50
60°
40
30°
90°
T = 125°C
J
30
120°
180°
DC
20
0
100 200 300 400 500 600 700 800 900
Average On-state Current (A)
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
130
120
110
100
90
1800
DC
180°
120°
90°
ST330C . . C Se r ie s
(Double Side Cooled)
1600
1400
1200
1000
800
600
400
200
0
R
(DC) = 0.04 K/W
thJ-hs
60°
30°
RM S Lim it
80
Conduction Angle
70
60
Conduction Period
ST330C..C Series
30°
50
60°
90°
120°
40
180°
T = 125°C
J
30
20
0
200
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
400
600
800
1000
0
200 400 600 800 1000 1200
Average On-state Current (A)
Fig. 6 - On-State Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94407
Revision: 11-Aug-08
ST330CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 720 A
Vishay High Power Products
9000
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
At Any Rated Load Condition And With
8500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
Rated V
RRM
Applied Following Surge.
Initial T = 125°C
Of Conduction May Not Be Maintained.
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST330 C . . C Se rie s
ST330C . . C Se rie s
0.01
0.1
Pulse Tra in Dura tion (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T = 25° C
J
T = 125° C
J
1000
ST330C..C Series
100
0
1
2
3
4
5
6
7
InstantaneousOn-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
0.01
St e a d y St a t e V a lu e
= 0.09 K/ W
R
thJ-hs
(Single Side Cooled)
= 0.04 K/ W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
ST3 3 0C . . C Se r ie s
1
0.001
0.001
0.01
0.1
10
Sq u a r e W a v e Pu lse D u r a t io n ( s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Document Number: 94407
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
ST330CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 720 A
Vishay High Power Products
100
Rectangulargate pulse
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66 ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
10
1
(a)
(b)
(2)
(1)
(3) (4)
VGD
IGD
Frequency Limited by PG(AV)
10 100
D e v ic e : ST330C . . C Se r ie s
0.1
0.1
0.001
0.01
1
InstantaneousGate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
ST
33
0
C
16
C
1
-
PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
-
-
-
Thyristor
Essential part number
0 = Converter grade
-
-
-
-
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
C = PUK case TO-200AB (E-PUK)
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
8
9
-
-
Critical dV/dt:
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95075
Dimensions
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94407
Revision: 11-Aug-08
Outline Dimensions
Vishay Semiconductors
TO-200AB (E-PUK)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.
14.1/15.1
(0.56/0.59)
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
40.5 (1.59) DIA. MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95075
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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