ST333C08LFM3L [VISHAY]
Silicon Controlled Rectifier, 620000mA I(T), 800V V(DRM);
| 型号： | ST333C08LFM3L |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 620000mA I(T), 800V V(DRM) |
| 文件： | 总10页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25170 rev. B 04/00
ST333C..C SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design
720A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
TypicalApplications
Inverters
Choppers
Induction heating
case style TO-200AB (E-PUK)
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST333C..C
Units
720
55
A
°C
@ T
hs
hs
IT(RMS)
ITSM
I2t
1435
25
A
@ T
°C
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
11000
11500
605
A
A
KA2s
KA2s
553
V
DRM/VRRM
400 to 800
10 to 30
V
t range
q
µs
TJ
- 40 to 125
°C
Document Number: 93677
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1
ST333C..C Series
Bulletin I25170 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST333C..C
repetitive peak voltage
V
non-repetitive peak voltage
V
04
08
400
800
500
900
50
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
100µs
7610
4080
2420
1230
50
180oel
50Hz
400Hz
1630
1630
1420
1390
2520
2670
2260
2330
6820
3600
1000Hz
1350
720
50
1090
550
50
2440
1450
50
2120
1220
50
2100
1027
50
A
V
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state currentdi/dt
VDRM
VDRM
V DRM
50
40
50
55
-
-
-
-
A/µs
Heatsink temperature
40
55
40
55
°C
Equivalent values for RC circuit
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
ST333C..C
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
720 (350)
55 (75)
1435
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
ITSM
Max. peak, one half cycle,
non-repetitive surge current
11000
11500
9250
9700
605
A
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
553
KA2s
428
391
I2√t
Maximum I2√t for fusing
6050
KA2√s t = 0.1 to 10ms, no voltage reapplied
Document Number: 93677
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2
ST333C..C Series
Bulletin I25170 rev. B 04/00
On-state Conduction
Parameter
ST333C..C Units Conditions
VTM
Max. peak on-state voltage
1.96
0.91
ITM= 1810A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
voltage
VT(TO)2 High level value of threshold
voltage
0.93
0.58
0.58
(I > π x IT(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
t1
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
t
IH
IL
Maximum holding current
600
TJ = 25°C, IT > 30A
mA
Typical latching current
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST333C..C Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
T
J = TJ max, VDRM = rated VDRM
1000
A/µs
ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
1.1
d
Resistive load, Gate pulse: 10V, 5Ω source
µs
Min Max
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
t
Max. turn-off time
10
30
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST333C..C Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
50
V/µs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST333C..C Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max., f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
T
J = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
Document Number: 93677
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3
ST333C..C Series
Bulletin I25170 rev. B 04/00
Thermal and Mechanical Specification
Parameter
ST333C..C
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.09
0.04
DC operation single side cooled
K/W
K/W
DC operation double side cooled
RthC-hs Max. thermal resistance,
case to heatsink
0.020
0.010
9800
(1000)
83
DC operation single side cooled
DC operation double side cooled
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AB (E-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.010
0.012
0.015
0.022
0.036
0.011
0.012
0.015
0.022
0.036
0.007
0.012
0.016
0.023
0.036
0.007
0.013
0.017
0.023
0.036
60°
30°
Ordering Information Table
Device Code
ST 33
3
C
08
C
H
K
1
3
4
7
1
2
5
6
8
9
10
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RRM76-(SCReee=aVpPopultkiaegCdeadRsvea/dtiTtnOgco-T2da0eb0l(eAf)oBr t(E-PUK)
-8tetst condition)
q combinations available
dv/dt (V/µs) 20
50
100 200 400
q
10
12
15
18
20
25
30
CN
CM
CL
CP
CK
--
DN
DM
DL
DP
DK
--
EN
EM FM *
EL
EP
EK
--
--
--
--
9-dcv0o/d=dteE-yetlet term. (Gate and Aux. Cathode Unsoldered Leads)
q
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
FL * HL
t (µs)
q
FP
FK
FJ
--
HP
HK
HJ
HH
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
--
--
--
*Standard part number.
All other types available only on request.
10
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
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4
Document Number: 93677
ST333C..C Series
Bulletin I25170 rev. B 04/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.
25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.
14.1 / 15.1
(0.56 / 0.59)
0.3 (0.01) MIN.
25.3 (0.99)
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
DIA. MAX.
40.5 (1.59) DIA. MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches)
25° 5°
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
130
120
110
100
90
1 30
1 20
1 10
1 00
9 0
ST333C..C Series
(Single Side Cooled)
ST 333C ..C S eries
(Sin g le S id e C oo led )
R
(DC) = 0.09 K/W
R
( D C ) = 0 .09 K /W
th J- hs
th J-hs
C ond uction Angle
80
8 0
Cond uction P eriod
70
7 0
60
6 0
50
30°
5 0
30°
60°
6 0°
40
4 0
90°
90°
30
3 0
120°
180°
12 0°
1 80°
D C
20
2 0
0
100
200
300
400
500
600
0
10 0 2 00 30 0 40 0 5 00 6 0 0 70 0 80 0 9 00
A ve ra g e O n -sta te C u rre n t (A )
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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Document Number: 93677
ST333C..C Series
Bulletin I25170 rev. B 04/00
130
120
110
100
90
1 3 0
ST333C..C Series
(Double Side Cooled)
1 2 0
1 1 0
1 0 0
9 0
R
(DC) = 0.04 K/W
th J-hs
8 0
C ondu ction Period
80
7 0
70
6 0
30°
60
5 0
30°
60°
50
90°
4 0
40
120°
3 0
180°
30
2 0
D C
1 0
20
0
200 400 600 800 1000 1200 1400 1600
0
0
1
2 00
1 00 0
Av era g e O n - sta te C u rre n t (A )
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
2 2 00
2 0 00
1 8 00
1 6 00
1 4 00
1 2 00
1 0 00
8 00
26 0 0
24 0 0
22 0 0
20 0 0
18 0 0
16 0 0
14 0 0
12 0 0
10 0 0
8 0 0
D C
180°
120°
90°
1 80°
1 20°
90°
60°
60°
30°
R M S Lim it
30°
R M S L im it
C ondu ction Period
S T3 33C ..C Se rie s
C ondu ction Angle
ST 333 C ..C S er ie s
6 00
6 0 0
4 00
4 0 0
T
= 12 5°C
2 00
T
= 125 °C
J
2 0 0
J
0
0
20 0
4 0 0
60 0
80 0
1 00 0
0
20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 14 0 0 1 60 0
A ve ra g e O n -sta te C u rren t (A )
A ve ra g e O n -sta te C u rren t (A )
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
10000
9500
9000
8500
8000
7500
7000
6500
6000
5500
5000
4500
12000
11000
10000
9000
8000
7000
6000
5000
4000
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. C ontrol
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RR M
In itial T = 125°C
J
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RR M
ST333C..C Series
ST333C..C Series
10
100
0.01
0.1
Pulse Train Duration (s)
1
Numb er O f Eq ual Amplitud e Half C ycle C urrent Pulses (N)
Fig. 7 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Fig. 8 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Document Number: 93677
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6
ST333C..C Series
Bulletin I25170 rev. B 04/00
0 .1
10000
1000
100
S T33 3C ..C Ser ies
T
T
= 25°C
J
S te a d y Sta te V a lu e
0.09 K /W
(S in gle Sid e C oo le d )
0.04 K /W
0 .0 1
= 125°C
R
=
th J-hs
J
R
=
thJ-h s
(D o u b le S id e C o ole d )
(D C O p e ra tio n )
ST333C..C Series
0 .00 1
0.5
1
1.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
0 .0 01
0 .0 1
0. 1
1
10
Sq u a re W a ve P u ls e D ur atio n (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
320
300
280
260
240
220
200
180
160
140
120
100
80
1 8 0
I
= 500 A
300 A
200 A
100 A
50 A
I
=
500 A
300 A
200 A
100 A
50 A
TM
TM
1 6 0
1 4 0
1 2 0
1 0 0
80
ST 333C ..C S eries
60
T
= 125 ° C
ST333C..C Series
= 125 °C
J
T
40
J
20
10 20 30 40 50 60 70 80 90 100
1 0
2 0
3 0
4 0
5 0
60
7 0
8 0
9 0 1 00
Rate Of Fall Of On-state Current - di/dt (A/µs)
R a te O f Fa ll O f Fo rw a rd C ur ren t - d i/d t (A /µ s)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
1 E4
1 E3
1 E2
200
50 Hz
400
100
400
200
500
100
500
50 H z
1000
1000
1500
1500
2500
Snubb er circu it
R
C
V
2500
3000
5000
Snubb er circuit
= 10 ohms
= 0.47 µF
s
R
= 10 ohms
= 0.47 µF
s
s
C
V
s
D
= 80% V
DRM
D
3000
=
80% V
DRM
5000
ST333C ..C Series
Sinusoidal pulse
ST333C..C Series
Sin usoidal pulse
T
= 55°C
T
= 40°C
tp
t p
C
C
E11E1
1E14
1E2
1E3
1E4
1 E1
1E2
1E3
P ulse B a sew id th (µ s)
Pu lse B a sew id th (µ s)
Fig. 13 - Frequency Characteristics
Document Number: 93677
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7
ST333C..C Series
Bulletin I25170 rev. B 04/00
1E4
Snubber circuit
R
C
V
= 10 ohms
= 0.47 µF
= 80% V DRM
s
s
D
200 100
50 Hz
400
50 Hz
500
100
1000
1500
2000
2500
3000
200
400
500
1000
Snubber circuit
1500
2000
2500
3000
1E3
R
C
= 10 ohms
= 0.47 µF
s
s
V
=
80% V
D
DRM
ST333C..C Series
Trapezoidal p ulse
ST333C..C Series
Trap ezoid al p ulse
5000
T
= 55°C
C
tp
T
= 40°C
C
5000
di/dt = 100A/µs
tp
di/d t = 50A/µs
1E2
1 E1
1E2
1E3
1E4
11E1
1 E2
1 E3
1 E4
P u lse Ba se w id th (µ s)
P u lse Ba sew id th (µs)
Fig. 14 - Frequency Characteristics
1 E4
1 E3
1 E2
Snubber circuit
R
C
V
= 10 ohms
= 0.47 µF
s
s
= 80% V
DR M
D
50 Hz
100
200
50 Hz
200 100
400
500
400
1000
500
1000
1500
2000
Snubb er circuit
1500
2000
2500
R
C
V
= 10 ohms
= 0.47 µ F
= 80% V
s
s
2500
3000
D
DRM
ST333C..C Series
Trapezoid al p ulse
3000
ST333C..C Series
Trapezoidal pulse
5000
T
= 55°C
C
T
=
40°C
C
tp
tp
5000
di/dt = 100A/µs
d i/dt = 100A/µs
1 E1
1 E2
1E3
1E411E1
1E 2
1 E3
1 E4
P u lse B asew id th (µ s)
P u lse Ba sew id th (µ s)
Fig. 15 - Frequency Characteristics
1E4
1E3
1E2
1E1
20 joules per p ulse
ST333C Series
Rectangula r pulse
di/dt = 50A/µs
20 jou les p er pulse
10
10
5
3
tp
2
1
5
3
2
0.5
0.3
1
0.5
0.2
0.4
0.3
0.2
ST333C ..C Series
Sinusoidal pulse
tp
1E4
1E41 1E1
1E1
1E2
1E3
1E2
1 E3
1E4
P u lse B ase w id th (µ s)
P u lse Ba sew id th (µ s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
Document Number: 93677
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8
ST333C..C Series
Bulletin I25170 rev. B 04/00
1 00
1 0
1
Re cta n g ula r g a te p u lse
(1) P G M = 1 0W , tp
(2) P G M = 2 0W , tp
(3) P G M = 4 0W , tp
(4) P G M = 6 0W , tp
=
=
=
=
20 m s
10 m s
5m s
a ) R ec om m en d e d lo a d lin e fo r
ra ted d i/d t : 20V , 10o h m s; tr< =1 µ s
b ) Re co m m en d ed loa d lin e f or
< = 30% ra te d d i/d t : 10 V , 10o h m s
tr< =1 µ s
3.3m s
(a )
(b )
(2)
(3 ) (4)
(1)
V G D
IG D
De vice : ST 333C ..C Se rie s Freq u en cy Lim ite d b y P G (A V )
0 .1 1 0 1 00
0.1
0.0 01
0.0 1
1
In sta n ta n e ou s G ate C u rr en t (A )
Fig. 17 - Gate Characteristics
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Document Number: 93677
9
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 99901
Revision: 08-Mar-07
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1
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