ST730C12L3LPBF [VISHAY]
Silicon Controlled Rectifier, 2000A I(T)RMS, 990000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AC, ROHS COMPLIANT, METAL, BPUK-2;
| 型号： | ST730C12L3LPBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 2000A I(T)RMS, 990000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AC, ROHS COMPLIANT, METAL, BPUK-2 栅 栅极 |
| 文件： | 总8页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST730CLPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 990 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
RoHS
• International standard case TO-200AC (B-PUK)
• Lead (Pb)-free
COMPLIANT
• Designed and qualified for industrial level
TO-200AC (B-PUK)
TYPICAL APPLICATIONS
• DC motor controls
PRODUCT SUMMARY
• Controlled DC power supplies
• AC controllers
IT(AV)
990 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
990
UNITS
A
°C
A
IT(AV)
Ths
55
2000
IT(RMS)
ITSM
I2t
Ths
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
17 800
18 700
1591
A
kA2s
1452
V
DRM/VRRM
800 to 2000
150
V
tq
Typical
µs
°C
TJ
- 40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
DRM/VRRM, MAXIMUM REPETITIVE PEAK
V
RSM, MAXIMUM
IDRM/IRRM MAXIMUM
VOLTAGE
CODE
TYPE NUMBER
AND OFF-STATE VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
V
mA
08
12
14
16
18
20
800
900
1200
1400
1600
1800
2000
1300
1500
1700
1900
2100
ST730C..L
80
Document Number: 94414
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST730CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 990 A
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
990 (375)
55 (85)
2000
A
Maximum average on-state current
at heatsink temperature
180° conduction, half sine wave
double side (single side) cooled
IT(AV)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
17 800
18 700
15 000
15 700
1591
No voltage
reapplied
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
1452
Maximum I2t for fusing
I2t
kA2s
1125
100 % VRRM
reapplied
1027
Maximum I2√t for fusing
I2√t
VT(TO)1
VT(TO)2
rt1
t = 0.1 to 10 ms, no voltage reapplied
15 910
0.98
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
V
1.12
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
0.32
mΩ
V
rt2
0.27
VTM
IH
Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.62
Maximum holding current
600
TJ = 25 °C, anode supply 12 V resistive load
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Gate drive 20 V, 20 Ω, tr ≤ 1 µs
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
dI/dt
1000
1.0
A/µs
Gate current 1 A, dIg/dt = 1 A/µs
Vd = 0.67 % VDRM, TJ = 25 °C
Typical delay time
Typical turn-off time
td
tq
µs
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs,
150
V
R = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
500
80
V/µs
mA
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94414
Revision: 11-Aug-08
ST730CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 990 A
Vishay High Power Products
TRIGGERING
VALUES
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
TYP. MAX.
Maximum peak gate power
PGM
PG(AV)
IGM
TJ = TJ maximum, tp ≤ 5 ms
10.0
2.0
3.0
20
W
A
Maximum average gate power
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp ≤ 5 ms
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ VGM
- VGM
TJ = TJ maximum, tp ≤ 5 ms
V
5.0
TJ = - 40 °C
TJ = 25 °C
200
100
50
-
200
-
DC gate current required to trigger
DC gate voltage required to trigger
IGT
mA
V
Maximum required gate trigger/
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
2.5
1.8
1.1
-
VGT
3.0
-
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
DC gate current not to trigger
DC gate voltage not to trigger
IGD
10
mA
V
VGD
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.073
UNITS
Maximum operating junction temperature range
Maximum storage temperature range
TJ
°C
TStg
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, junction to heatsink
RthJ-hs
0.031
K/W
0.011
Maximum thermal resistance, case to heatsink
Mounting force, 10 %
RthC-hs
0.006
14 700
(1500)
N
(kg)
Approximate weight
Case style
255
g
See dimensions - link at the end of datasheet
TO-200AC (B-PUK)
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.020
0.036
0.006
0.010
0.015
0.021
0.036
0.006
0.011
0.015
0.021
0.036
180°
120°
90°
TJ = TJ maximum
K/W
60°
30°
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 94414
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST730CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 990 A
Vishay High Power Products
130
130
ST730C . . L Se r ie s
ST730C . . L Se rie s
120
110
100
90
(Single Side Cooled)
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.073 K/W
R
(DC) = 0.031 K/W
thJ-hs
thJ-hs
80
Conduction Period
Conduction Angle
70
80
60
30°
30°
70
60°
60°
50
90°
90°
120°
60
120°
40
180°
180°
50
30
DC
20
40
0
400 800 1200 1600 2000 2400
0
100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
130
120
110
100
90
2500
2000
1500
1000
500
ST730C..LSeries
180°
120°
90°
(Single Side Cooled)
R
(DC) = 0.073 K/W
thJ-hs
60°
30°
RM S Lim it
80
Conduction Period
70
60
30°
Conduction Angle
ST730C..LSeries
50
60°
90°
120°
40
T = 125°C
30
J
180°
DC
0
20
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
0
200 400 600 800 1000 1200
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
3500
3000
2500
2000
1500
1000
500
130
120
110
100
90
DC
180°
120°
90°
ST730C . . L Se rie s
(Double Side Cooled)
R
(DC) = 0.031 K/W
thJ-hs
60°
30°
Conduction Angle
RMS Lim it
80
70
Conduction Period
ST730C..LSeries
60
50
30°
60°
90°
40
120°
180°
T = 125° C
J
30
0
20
0
400 800 1200 1600 2000 2400
Average On-state Current (A)
0
200 400 600 800 1000 1200 1400
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94414
Revision: 11-Aug-08
ST730CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 990 A
Vishay High Power Products
18000
16000
15000
14000
13000
12000
11000
10000
9000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
17000
16000
15000
14000
13000
12000
11000
10000
9000
Rated V
RRM
Applied Following Surge.
Initial T = 125°C
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Ra t e d V
Re a p p lie d
RRM
ST730C . . L Se rie s
ST730C . . L Se r ie s
8000
8000
7000
7000
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
1000
100
T = 25° C
J
T = 125°C
J
ST730C . . L Se rie s
0.5
1
1.5
2
2.5
3
3.5
InstantaneousOn-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
0.01
Steady State Value
= 0.073 K/ W
R
thJ-hs
(Single Side Cooled)
= 0.031 K/ W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
ST730C . . L Se ri e s
1
0.001
0.001
0.01
0.1
10
Sq u a r e Wa v e Pu l se D u r a t i o n ( s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Document Number: 94414
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
ST730CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 990 A
Vishay High Power Products
100
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/ dt : 10V, 10ohms
tr<=1 µs
10
1
(a)
(b)
(2)
(1)
(3) (4)
VGD
IGD
Fre q ue nc y Lim it e d b y PG ( AV)
10 100
Device: ST730C..LSeries
0.1
0.1
0.001
0.01
1
InstantaneousGate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
ST
73
0
C
20
L
1
-
PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
-
-
-
Thyristor
Essential part number
0 = Converter grade
-
-
-
-
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
L = PUK case TO-200AC (B-PUK)
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
8
9
-
-
Critical dV/dt:
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95076
Dimensions
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94414
Revision: 11-Aug-08
Outline Dimensions
Vishay Semiconductors
TO-200AC (B-PUK)
DIMENSIONS in millimeters (inches)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
34 (1.34) DIA. MAX.
2 places
0.7 (0.03) MIN.
27 (1.06) MAX.
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
36.5 (1.44)
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Document Number: 95076
Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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