SUB60N06-08 [VISHAY]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
SUB60N06-08
元器件型号: SUB60N06-08
生产厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述和应用:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

PDF文件: 总2页 (文件大小:61K)
下载文档:  下载PDF数据表文档文件
型号参数:SUB60N06-08参数

SUB60N06-14

Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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2 VISHAY

SUB60N06-18

N-Channel 60-V (D-S), 175C MOSFET

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42 VISHAY

SUB60N06-18

N-Channel 60-V (D-S), 175C MOSFET

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101 VISHAY

SUB60N06-18

N-Channel 60-V (D-S), 175C MOSFET

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35 VISHAY

SUB60N06-18-E3

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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1 VISHAY

SUB60P06-20

Transistor

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0 VISHAY

SUB610

Schottky Barrier Diode

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20 AUK

SUB610

General Purpose Schottky Barrier Diode

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14 KODENSHI

SUB65P04-15

P-Channel 40-V (D-S) 175C MOSFET

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27 VISHAY

SUB65P04-15

P-Channel 40-V (D-S) 175C MOSFET

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13 VISHAY

SUB65P06

P-Channel Enhancement-Mode Transistors

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58 TEMIC

SUB65P06

P-Channel Enhancement-Mode Transistors

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18 TEMIC

SUB65P06-20

P-Channel Enhancement-Mode Transistors

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25 TEMIC

SUB65P06-20

P-Channel Enhancement-Mode Transistors

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31 TEMIC

SUB65P06-20

P-Channel 60-V (D-S), 175C MOSFET

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106 VISHAY