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元器件品牌
SUB60N06-08
[VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
元器件型号:
SUB60N06-08
生产厂家:
VISHAY TELEFUNKEN
描述和应用:
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PDF文件:
总2页 (文件大小:61K)
下载文档:
下载PDF数据表文档文件
型号参数:SUB60N06-08参数
查看货源
SUB60N06-14
Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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SUB60N06-18
N-Channel 60-V (D-S), 175C MOSFET
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SUB60N06-18
N-Channel 60-V (D-S), 175C MOSFET
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: Undefined variable $rtag in
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VISHAY
SUB60N06-18
N-Channel 60-V (D-S), 175C MOSFET
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on line
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VISHAY
SUB60N06-18-E3
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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1
VISHAY
SUB60P06-20
Transistor
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on line
156
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0
VISHAY
SUB610
Schottky Barrier Diode
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AUK
SUB610
General Purpose Schottky Barrier Diode
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14
KODENSHI
SUB65P04-15
P-Channel 40-V (D-S) 175C MOSFET
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156
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27
VISHAY
SUB65P04-15
P-Channel 40-V (D-S) 175C MOSFET
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13
VISHAY
SUB65P06
P-Channel Enhancement-Mode Transistors
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TEMIC
SUB65P06
P-Channel Enhancement-Mode Transistors
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18
TEMIC
SUB65P06-20
P-Channel Enhancement-Mode Transistors
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on line
156
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25
TEMIC
SUB65P06-20
P-Channel Enhancement-Mode Transistors
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31
TEMIC
SUB65P06-20
P-Channel 60-V (D-S), 175C MOSFET
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156
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106
VISHAY
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