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SUB70N03-09P [VISHAY]

N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized; N通道30 -V （D -S ） ， 175 ？ C， MOSFET的PWM优化
SUB70N03-09P
型号： SUB70N03-09P
厂家： VISHAY    VISHAY
描述：

N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized
N通道30 -V （D -S ） ， 175 ？ C， MOSFET的PWM优化

晶体 晶体管 功率场效应晶体管
文件： 总4页 (文件大小：76K)
中文：  中文翻译
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SUP/SUB70N03-09P  
Vishay Siliconix  
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
a
0.009 @ V = 10 V  
"70  
GS  
30  
0.015 @ V = 4.5 V  
GS  
"55  
D
TO-220AB  
TO-263  
G
DRAIN connected to TAB  
G
D S  
Top View  
G D S  
Top View  
S
SUB70N03-09  
N-Channel MOSFET  
SUP70N03-09  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
"30  
"20  
DS  
V
V
GS  
a
T
C
= 25_C  
"70  
Continuous Drain Current (T = 175_C)  
I
D
J
T
= 100_C  
"50  
"180  
"45  
101  
C
A
Pulsed Drain Current  
Avalanche Current  
I
DM  
I
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
mJ  
W
c
Power Dissipation  
T
C
= 25_C  
P
D
93  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
d
PCB Mount (TO-263)  
40  
62.5  
1.6  
Junction-to-Ambient  
Junction-to-Case  
R
thJA  
thJC  
_
C/W  
Free Air (TO-220AB)  
R
Notes:  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
Document Number: 70821  
S-59917—Rev. A, 28-Sep-98  
www.vishay.com S FaxBack 408-970-5600  
2-1  
SUP/SUB70N03-09P  
Vishay Siliconix  
MOSFET SPECIFICATIONS (T=2_5C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
V
V
= 0 V, I = 250 mA  
30  
1
(BR)DSS  
GS D  
V
V
DS  
= V , I = 250 mA  
Gate Threshold Voltage  
Gate-Body Leakage  
V
2
GS DS  
GS(th)  
V
DS  
= 0 V, V = "20 V  
I
"100  
1
nA  
GS  
GSS  
V
DS  
= 24 V, V = 0 V  
GS  
Zero Gate Voltage Drain Current  
I
V
V
= 24 V, V = 0 V, T = 125_C  
50  
mA  
DSS  
DS  
GS  
J
= 24 V, V = 0 V, T = 175_C  
150  
DS  
GS  
J
a
On-State Drain Current  
I
V = 5 V, V = 10 V  
DS GS  
70  
A
D(on)  
V
= 10 V, I = 30 A  
D
0.007  
0.009  
0.0135  
0.017  
0.015  
GS  
V
V
= 10 V, I = 30 A, T = 125_C  
GS  
D
J
a
Drain-Source On-State Resistance  
r
W
DS(on)  
= 10 V, I = 30 A, T = 175_C  
GS  
D
J
V
GS  
= 4.5 V, I = 20 A  
0.011  
60  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 30 A  
30  
S
DS  
D
Dynamicb  
Input Capacitance  
C
2700  
680  
360  
45  
iss  
Output Capacitance  
C
oss  
V
GS  
= 0 V, V = 25 V, f = 1 MHz  
pF  
nC  
DS  
Reversen Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
70  
g
c
Gate-Source Charge  
Q
gs  
Q
gd  
V
DS  
= 15 V, V = 10 V, I = 70 A  
8.5  
11  
GS  
D
c
Gate-Drain Charge  
c
Turn-On Delay Time  
t
13  
20  
15  
60  
20  
d(on)  
c
Rise Time  
t
r
7
V
= 15 V, R = 0.21 W  
L
DD  
ns  
c
I
D
] 70 A, V  
= 10 V, R = 2.5 W  
GEN G  
Turn-Off Delay Time  
t
35  
d(off)  
c
Fall Time  
t
f
12  
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b  
Continuous Current  
I
70  
180  
1.5  
70  
S
A
Pulsed Current  
I
SM  
a
Forward Voltage  
V
SD  
I
F
= 70 A, V = 0 V  
1.2  
35  
V
GS  
Reverse Recovery Time  
t
rr  
I
F
= 70 A, di/dt = 100 A/ms  
ns  
Notes:  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Document Number: 70821  
S-59917—Rev. A, 28-Sep-98  
www.vishay.com S FaxBack 408-970-5600  
2-2  
SUP/SUB70N03-09P  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
180  
100  
V
GS  
= 10 thru 7 V  
150  
6 V  
80  
60  
40  
20  
0
120  
90  
5 V  
T
= 125_C  
60  
C
4 V  
30  
25_C  
3 V  
–55_C  
0
0
2
4
6
8
10  
0
1
2
3
4
5
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
100  
80  
60  
40  
20  
0.030  
0.025  
0.020  
0.015  
0.010  
0.005  
0
T
= –55_C  
C
25_C  
125_C  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
0
0
10  
20  
30  
40  
50  
60  
70  
0
20  
40  
60  
80  
100  
I
D
– Drain Current (A)  
I
D
– Drain Current (A)  
Capacitance  
Gate Charge  
4000  
3000  
2000  
1000  
10  
8
V
= 15 V  
= 70 A  
DS  
C
iss  
I
D
6
4
C
oss  
2
C
rss  
0
0
0
6
12  
18  
24  
30  
0
10  
20  
Q – Total Gate Charge (nC)  
g
30  
40  
50  
V
– Drain-to-Source Voltage (V)  
DS  
Document Number: 70821  
S-59917—Rev. A, 28-Sep-98  
www.vishay.com S FaxBack 408-970-5600  
2-3  
SUP/SUB70N03-09P  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0
100  
V
= 10 V  
= 30 A  
GS  
I
D
T = 150_C  
J
T = 25_C  
J
10  
1
–50 –25  
0
25  
50  
75 100 125 150 175  
0
0.3  
V
0.6  
0.9  
1.2  
1.5  
T
J
– Junction Temperature (_C)  
– Source-to-Drain Voltage (V)  
SD  
THERMAL RATINGS  
Maximum Drain Current vs.  
Case Temperature  
Safe Operating Area  
500  
100  
80  
60  
40  
20  
0
10 ms  
Limited  
by r  
DS(on)  
100 ms  
10  
1 ms  
T
= 25_C  
C
10 ms  
Single Pulse  
100 ms  
dc  
1
0.1  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
V
DS  
– Drain-to-Source Voltage (V)  
T
C
– Case Temperature (_C)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
–5  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
3
Document Number: 70821  
S-59917—Rev. A, 28-Sep-98  
www.vishay.com S FaxBack 408-970-5600  
2-4  

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