SUB70N06-14 [VISHAY]

N-Channel 60-V (D-S), 175 Degree Celcious MOSFET; N通道60 -V （D -S ）， 175度Celcious MOSFET


型号：	SUB70N06-14
厂家：	VISHAY
描述：	N-Channel 60-V (D-S), 175 Degree Celcious MOSFET N通道60 -V （D -S ）， 175度Celcious MOSFET 晶体晶体管功率场效应晶体管
文件：	总5页 (文件大小：84K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

_C/W

SUP/SUB70N06-14

Vishay Siliconix

N-Channel 60-V (D-S), 175_C MOSFET

PRODUCT SUMMARY

V_(BR)DSS(V)

r_DS(on)(W)

I_D(A)

0.014

TO-220AB

TO-263

DRAIN connected to TAB

D S

Top View

G D S

Top View

SUB70N06-14

N-Channel MOSFET

SUP70N06-14

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

"20

= 25_C

Continuous Drain Current (T = 175_C)

= 100_C

160

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

L = 0.1 mH

180

= 25_C (TO-220AB and TO-263)

142

Power Dissipation

= 25_C (TO-263)

3.7

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

PCB Mount (TO-263)

Junction-to-Ambient

Junction-to-Case

thJA

thJC

Free Air (TO-220AB)

62.5

1.05

Notes:

a. Package limited.

b. Duty cycle v 1%.

c. See SOA curve for voltage derating.

d. When mounted on 1” square PCB (FR-4 material).

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70291

S-57253—Rev. C, 24-Feb-98

www.vishay.com S FaxBack 408-970-5600

2-1

SUP/SUB70N06-14

Vishay Siliconix

SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

= 0 V, I = 250 mA

(BR)DSS

= V , I = 1 mA

GS DS

Gate Threshold Voltage

Gate-Body Leakage

2.0

3.0

4.0

GS(th)

= 0 V, V = "20 V

"100

GSS

= 60 V, V = 0 V

Zero Gate Voltage Drain Current

= 60 V, V = 0 V, T = 125_C

DSS

= 60 V, V = 0 V, T = 175_C

150

On-State Drain Current

V = 5 V, V = 10 V

DS GS

D(on)

= 10 V, I = 30 A

0.014

0.023

0.028

Drain-Source On-State Resistance

= 10 V, I = 30 A, T = 125_C

DS(on)

= 10 V, I = 30 A, T = 175_C

Forward Transconductance

= 15 V, I = 30 A

Dynamic^b

Input Capacitance

2400

490

130

iss

Output Capacitance

oss

= 0 V, V = 25 V, f = 1 MHz

Reversen Transfer Capacitance

rss

Total Gate Charge

Gate-Source Charge

= 30 V V = 10 V, I = 60 A

Gate-Drain Charge

Turn-On Delay Time

d(on)

Rise Time

= 30 V, R = 0.47 W

] 60 A, V

= 10 V, R = 2.5 W

GEN G

Turn-Off Delay Time

d(off)

Fall Time

Source-Drain Diode Ratings and Characteristics (T_C= 25_C)^b

Continuous Current

160

1.4

Pulsed Current

Forward Voltage

= 70 A, V = 0 V

Reverse Recovery Time

3.5

RM(REC)

Peak Reverse Recovery Current

Reverse Recovery Charge

I = 60 A, di/dt = 100 A/ms

0.08

Notes:

a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Document Number: 70291

S-57253—Rev. C, 24-Feb-98

www.vishay.com S FaxBack 408-970-5600

2-2

SUP/SUB70N06-14

Vishay Siliconix

TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)

Output Characteristics

Transfer Characteristics

150

125

100

= 10, 9, 8 V

7 V

6 V

5 V

= 125_C

25_C

4 V

–55_C

– Drain-to-Source Voltage (V)

– Gate-to-Source Voltage (V)

Transconductance

On-Resistance vs. Drain Current

0.0200

0.0175

0.0150

0.0125

0.0100

0.0075

0.005

= –55_C

25_C

125_C

= 10 V

= 20 V

– Gate-to-Source Voltage (V)

– Drain Current (A)

Capacitance

Gate Charge

3500

3000

2500

2000

1500

1000

500

= 30 V

= 60 A

iss

oss

rss

Q – Total Gate Charge (nC)

100

– Drain-to-Source Voltage (V)

Document Number: 70291

S-57253—Rev. C, 24-Feb-98

www.vishay.com S FaxBack 408-970-5600

2-3

SUP/SUB70N06-14

Vishay Siliconix

TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

2.5

2.0

1.5

1.0

0.5

100

= 10 V

= 30 A

= 150_C

= 25_C

–50 –25

75 100 125 150 175

0.25

0.50

0.75

1.00

1.25

1.50

– Junction Temperature (_C)

– Source-to-Drain Voltage (V)

THERMAL RATINGS

Maximum Avalanche and Drain Current

vs. Case Temperature

Safe Operating Area

500

100

Limited

by r

DS(on)

100 ms

1 ms

10 ms

100 ms,

1 s, dc

= 25_C

Single Pulse

0.1

100

125

150

175

0.1

100

– Case Temperature (_C)

– Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

–5

–4

–3

–2

–1

Square Wave Pulse Duration (sec)

Document Number: 70291

S-57253—Rev. C, 24-Feb-98

www.vishay.com S FaxBack 408-970-5600

2-4

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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