SUB85N04-04 [VISHAY]
N-Channel 40-V (D-S) 175C MOSFET; N通道40 -V （ D- S） 175℃ MOSFET
| 型号： | SUB85N04-04 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 40-V (D-S) 175C MOSFET |
| 文件： | 总5页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUP/SUB85N04-04
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
40
0.004 @ V = 10 V
GS
85
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
Top View
S
Ordering Information
SUP85N04-04
SUP85N04-04—E3 (Lead (Pb)-Free)
Ordering Information
SUB85N04-04
SUB85N04-04—E3 (Lead (Pb)-Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
40
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
V
20
a
T
= 25_C
= 125_C
85
C
Continuous Drain Current (T = 175_C)
I
J
D
a
T
85
C
A
Pulsed Drain Current
Avalanche Current
I
240
70
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
211
mJ
c
T
= 25_C (TO-220AB and TO-263)
250
C
b
Maximum Power Dissipation
P
W
D
d
T
A
= 25_C (TO-263)
3.75
Operating Junction and Storage Temperature Range
T , T
J
−55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
PCB Mount (TO-263)
40
62.5
0.6
Junction-to-Ambient
Junction-to-Case
R
R
thJA
Free Air (TO-220AB)
_C/W
thJC
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
www.vishay.com
1
SUP/SUB85N04-04
Vishay Siliconix
SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 250 mA
40
2
(BR)DSS
DS
D
V
V
V
DS
= V , I = 250 mA
4
GS(th)
GS
D
V
= 0 V, V = 20 V
GS
Gate-Body Leakage
I
100
nA
DS
DS
GSS
V
= 40 V, V = 0 V
1
GS
V
V
= 40 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 40 V, V = 0 V, T = 175_C
250
DS
GS
J
a
On-State Drain Current
I
V
w 5 V, V = 10 V
120
30
A
D(on)
DS
GS
V
= 10 V, I = 30 A
0.0031
0.004
0.0055
0.007
GS
D
a
V
V
= 10 V, I = 30 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
= 10 V, I = 30 A, T = 175_C
GS
D
J
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 30 A
S
D
Dynamicb
Input Capacitance
C
C
7620
1325
710
160
40
iss
Output Capacitance
pF
nC
V
V
= 0 V, V = 25 V, f = 1 MHz
DS
oss
GS
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
250
g
c
Gate-Source Charge
Q
Q
= 30 V, V = 10 V, I = 85 A
gs
gd
DS
GS
D
c
Gate-Drain Charge
55
c
Turn-On Delay Time
t
20
35
d(on)
c
Rise Time
t
115
75
175
115
130
r
V
= 30 V, R = 0.47 W
L
GEN g
DD
^ 85 A, V
ns
c
I
D
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
85
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
85
S
A
Pulsed Current
I
240
SM
a
I
= 85 A, V = 0 V
GS
Forward Voltage
V
1.1
60
1.4
90
V
ns
A
F
SD
Reverse Recovery Time
t
rr
RM(REC)
I
F
= 85 A, di/dt = 100 A/ms
Peak Reverse Recovery Current
Reverse Recovery Charge
I
2.6
0.08
4
Q
0.15
mC
rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
www.vishay.com
2
SUP/SUB85N04-04
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
250
200
150
100
50
V
GS
= 10 thru 7 V
200
150
100
50
6 V
T
= 125_C
C
5 V
4 V
25_C
−55_C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
250
200
150
100
50
0.005
0.004
0.003
0.002
0.001
0.000
T
= −55_C
C
25_C
V
GS
= 10 V
125_C
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
12000
10000
8000
6000
4000
2000
0
20
16
12
8
V
D
= 30 V
DS
I
= 85 A
C
iss
C
oss
4
C
rss
0
0
8
16
24
32
40
0
60
120
Q − Total Gate Charge (nC)
g
180
240
300
V
− Drain-to-Source Voltage (V)
DS
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
www.vishay.com
3
SUP/SUB85N04-04
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
1.6
1.2
0.8
0.4
0.0
100
V
D
= 10 V
GS
I
= 30 A
T = 150_C
J
10
T = 25_C
J
1
−50 −25
0
25
50
75 100 125 150 175
0
0.3
V − Source-to-Drain Voltage (V)
SD
0.6
0.9
1.2
T
− Junction Temperature (_C)
J
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
55
51
47
43
39
35
I
D
= 250 mA
100
I
AV
(A) @ T = 25_C
A
10
1
I
AV
(A) @ T = 150_C
A
0.1
−50 −25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
(Sec)
0.1
1
t
in
T
− Junction Temperature (_C)
J
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
www.vishay.com
4
SUP/SUB85N04-04
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
100
80
60
40
20
0
10 ms
100 ms
100
10
Limited
by r
1 ms
DS(on)
10 ms
100 ms
dc
1
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
− Ambient Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
www.vishay.com
5
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