SUD35N05-26L-E3 [VISHAY]

Power Field-Effect Transistor, 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2;


型号：	SUD35N05-26L-E3
厂家：	VISHAY
描述：	Power Field-Effect Transistor, 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 脉冲晶体管
文件：	总7页 (文件大小：139K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SUD35N05-26L

Vishay Siliconix

N-Channel 55 V (D-S) 175 °C MOSFET

FEATURES

TrenchFET^®Power MOSFETS

PRODUCT SUMMARY

•

_D(A)^a

V_DS(V)

R_DS(on)()

175 °C Rated Maximum Junction Temperature

Low Input Capacitance

0.0200 at V_GS= 10 V

0.0260 at V_GS= 4.5 V

Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

TO-252

Drain Connected to Tab

Top View

N-Channel MOSFET

Ordering Information:

SUD35N05-26L-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current (T_J= 175 °C)^b

I_D

T_C= 100 °C

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

50^c

7.5^b

T_C= 25 °C

T_A= 25 °C

P_D

Maximum Power Dissipation

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t  10 s

Junction-to-Ambient^b

R_thJA

Steady State

°C/W

R_thJC

R_thJL

Junction-to-Case

Junction-to-Lead

2.5

Notes:

a. Package limited.

b. Surface mounted on 1" x1" FR4 board, t  10 s.

c. See SOA curve for voltage derating.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 71443

S12-1360-Rev. C, 11-Jun-12

www.vishay.com

For more information please contact: pmostechsupport@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD35N05-26L

Vishay Siliconix

SPECIFICATIONS (T = 25 °C, unless otherwise noted)

Typ^a

Parameter

Symbol

Test Conditions

Min.

Max.

Unit

Static

V_BR

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250 µA

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

µA

V_DS= 0 V, V_GS

20 V

100

V_DS= 44 V, V_GS= 0 V

_DS= 44 V, V_GS= 0 V, T_J= 125 °C

V_DS=5 V, V_GS= 5 V

I_DSS

Zero Gate Voltage Drain Current

On-State Drain Current^b

I_D(on)

V_GS= 10 V, I_D= 20 A

0.0165

0.0200

0.0350

0.0260

Drain-Source On-State Resistance^b

R_DS(on)

_GS= 10 V, I_D= 10 A, T_J= 125 °C

_GS= 4.5 V, I_D= 15 A

V_DS= 15 V, I_D= 20 A



0.0215

Forward Transconductance^b

Dynamic^a

g_fs

C_iss

C_oss

C_rss

Q_g

Input Capacitance

885

185

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

V_DS= 25 V, V_GS= 5 V, I_D= 35 A

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge^c

Gate-Source Charge^c

Gate-Drain Charge^c

Turn-On Delay Time^c

Rise Time^c

10.5

Q_gs

Q_gd

t_d(on)

t_r

4.8

_DD= 25 V, R_L= 0.3 

Turn-Off Delay Time^c

Fall Time^c

I_D 35 A, V_GEN= 10 V, R_G= 2.5 

t_d(off)

t_f

100

150

Source-Drain Diode Ratings and Characteristic (T_C= 25 °C)

I_S

I_SM

V_SD

t_rr

Continuous Current

1.5

Pulsed Current

Diode Forward Voltage^b

I_F= 80 A, V_GS= 0 V

I_F= 35 A, di/dt = 100 A/µs

Source-Drain Reverse Recovery Time

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width  300 µs, duty cycle  2 %.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Document Number: 71443

S12-1360-Rev. C, 11-Jun-12

www.vishay.com

For more information please contact: pmostechsupport@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD35N05-26L

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C unless noted)

100

= 10 thru 6 V

5 V

= - 55 °C

25 °C

125 °C

4 V

2 V

3 V

- Gate-to-Source Voltage (V)

- Drain-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

0.04

0.03

0.02

0.01

0.00

= - 55 °C

25 °C

= 4.5 V

= 10 V

125 °C

100

- Drain Current (A)

Transconductance

On-Resistance vs. Drain Current

1500

1200

900

600

300

= 25 V

= 35 A

iss

oss

rss

- Drain-to-Source Voltage (V)

- Total Gate Charge (nC)

Capacitance

Gate Charge

Document Number: 71443

S12-1360-Rev. C, 11-Jun-12

www.vishay.com

For more information please contact: pmostechsupport@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUD35N05-26L

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C unless noted)

100

2.0

= 10 V

= 20 A

1.6

1.2

0.8

0.4

0.0

T = 175 °C

T = 25 °C

- 50 - 25

75 100 125 150 175

0.2

0.4

0.6

0.8

1.0

1.2

- Junction Temperature (°C)

- Source-to-Drain Voltage (V)

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

THERMAL RATINGS

500

100

Limited

DS(on)*

by R

10 µs

100 µs

10 ms

100 ms

1 s

= 25 °C

Single Pulse

0.1

100

125

150

175

0.1

100

- Drain-to-Source Voltage (V)

- Case Temperature (°C)

* V > minimum V at which R is specified

DS(on)

Max. Avalanche and Drain Current vs. Case Temperature

Safe Operating Area

Duty Cycle = 0.5

0.2

0.1

0.02

0.05

Single Pulse

0.01

-4

-3

-2

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?71443.

Document Number: 71443

S12-1360-Rev. C, 11-Jun-12

www.vishay.com

For more information please contact: pmostechsupport@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information

www.vishay.com

Vishay Siliconix

TO-252AA CASE OUTLINE

MILLIMETERS

INCHES

MAX.

DIM.

MIN.

MAX.

2.38

0.127

0.88

1.14

5.46

0.61

0.89

6.22

MIN.

0.086

2.18

0.094

0.005

0.035

0.045

0.215

0.024

0.035

0.245

0.64

0.76

4.95

0.46

5.97

5.21

6.35

4.32

9.40

0.025

0.030

0.195

0.018

0.235

0.205

0.250

0.170

0.370

6.73

0.265

10.41

0.410

2.28 BSC

4.56 BSC

1.40

0.090 BSC

0.180 BSC

1.78

1.27

1.02

1.52

0.055

0.070

0.050

0.040

0.060

0.89

0.035

1.14

0.045

ECN: X12-0247-Rev. M, 24-Dec-12

DWG: 5347

Note

Dimension L3 is for reference only.

•

Revision: 24-Dec-12

Document Number: 71197

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224

(5.690)

0.180

0.055

(1.397)

(4.572)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index

Document Number: 72594

Revision: 21-Jan-08

www.vishay.com

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free

requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference

to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21

conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000

SUD35N05-26L-E3 [VISHAY]

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