SUD50N03-16P [VISHAY]
N-CHANNEL 30-V (D-S) MOSFET; N通道30 -V (D -S )的MOSFET型号: | SUD50N03-16P |
厂家: | VISHAY |
描述: | N-CHANNEL 30-V (D-S) MOSFET |
文件: | 总4页 (文件大小:68K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SUD50N03-16P
Vishay Siliconix
New Product
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D PWM Optimized
VDS (V)
rDS(on) (W)
ID (A)a
D 100% Rg Tested
APPLICATIONS
0.016 @ V = 10 V
15
12
GS
30
0.024 @ V = 4.5 V
GS
D High-Side DC/DC
− Desktop
− Server
D DDR DC/DC Converter
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
N-Channel MOSFET
Ordering Information: SUD50N03-16P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
"20
37
DS
GS
V
V
T
= 25_C
= 25_C
= 100_C
C
a
T
15
Continuous Drain Current
I
A
D
T
A
10.6
40
A
Pulsed Drain Current
I
DM
a
Continuous Source Current (Diode Conduction)
Avalanche Current
I
5
S
I
AS
25
L = 0.1 mH
Single Pulse Avalanche Energy
E
31.25
40.8
mJ
AS
T
= 25_C
= 25_C
C
Maximum Power Dissipation
P
W
D
a
T
6.5
A
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
18
40
23
50
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Maximum Junction-to-Case
3.0
3.7
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72634
S-40466—Rev. A, 15-Mar-04
www.vishay.com
1
SUD50N03-16P
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
30
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
1.0
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 30 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
40
10
A
D(on)
DS
GS
V
= 10 V, I = 15 A
0.0128
0.019
0.016
0.025
0.024
GS
D
b
V
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 10 A
D
GS
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
1150
215
70
iss
V
GS
= 0 V, V = 25 V, f = 1 MHz
DS
Output Capacitance
pF
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
8.5
5
13
g
c
Gate-Source Charge
Q
Q
V
DS
= 15 V, V = 4.5 V, I = 50 A
nC
gs
gd
GS
D
c
Gate-Drain Charge
2.5
5.5
7
Gate Resistance
R
g
2.7
8.25
15
W
c
Turn-On Delay Time
t
d(on)
c
Rise Time
t
20
30
r
V
= 15 V, R = 0.3 W
L
GEN g
DD
ns
c
I
D
^ 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
25
40
d(off)
c
Fall Time
t
f
12
20
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
40
1.5
70
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 20 A, V = 0 V
1.0
25
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
GS
= 10 thru 5 V
50
40
30
20
10
0
4 V
T
= 125_C
C
25_C
3 V
−55_C
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72634
S-40466—Rev. A, 15-Mar-04
www.vishay.com
2
SUD50N03-16P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
60
0.05
0.04
0.03
0.02
0.01
0.00
T
= −55_C
C
50
40
30
20
10
0
25_C
125_C
V
= 4.5 V
GS
V
GS
= 10 V
0
5
10
D
15
20
25
30
0
10
20
30
40
50
60
I
− Drain Current (A)
I
− Drain Current (A)
D
Capacitance
Gate Charge
1500
1200
900
600
300
0
10
8
C
iss
V
D
= 15 V
DS
I
= 50 A
6
4
C
oss
2
C
rss
0
0
5
10
15
20
25
30
0
3
6
9
12
Q − Total Gate Charge (nC)
g
15
18
V
DS
− Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.1
1.8
1.5
1.2
0.9
0.6
100
10
1
V
GS
= 10 V
I
D
= 15 A
T = 150_C
T = 25_C
J
J
−50 −25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
− Junction Temperature (_C)
V
SD
− Source-to-Drain Voltage (V)
J
Document Number: 72634
S-40466—Rev. A, 15-Mar-04
www.vishay.com
3
SUD50N03-16P
Vishay Siliconix
New Product
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
100
20
15
10
5
10 ms
Limited
by r
100 ms
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
T
= 25_C
dc, 100 s
A
Single Pulse
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
A
− Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
100
Document Number: 72634
S-40466—Rev. A, 15-Mar-04
www.vishay.com
4
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