SUM09N20-270 [VISHAY]
N-Channel 200-V (D-S) 175 Degree Celcious MOSFET; N沟道200 -V （D -S ） 175度Celcious MOSFET
| 型号： | SUM09N20-270 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 200-V (D-S) 175 Degree Celcious MOSFET |
| 文件： | 总5页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM09N20-270
Vishay Siliconix
New Product
N-Channel 200-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
V(BR)DSS (V)
rDS(on) (W)
ID (A)
D New Low Thermal Resistance Package
0.270 @ V = 10 V
9
GS
200
0.300 @ V = 6 V
8.5
GS
D
TO-263
G
G
D S
Top View
Ordering Information: SUM09N20-270
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
200
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
V
"20
T
= 25_C
= 125_C
9
5.2
10
C
Continuous Drain Current (T = 175_C)
I
J
D
T
C
A
Pulsed Drain Current
Avalanche Current
I
DM
I
7
AR
a
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
2.45
mJ
b
T
T
= 25_C
60
C
a
Maximum Power Dissipation
P
W
D
c
= 25_C
3.75
A
Operating Junction and Storage Temperature Range
T , T
J
-55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
c
Junction-to-Ambient (PCB Mount)
R
40
thJA
thJC
C/W
Junction-to-Case (Drain)
R
2.5
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
www.vishay.com
1
SUM09N20-270
New Product
Vishay Siliconix
SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 250 mA
200
2
(BR)DSS
DS
D
V
V
V
DS
= V , I = 250 mA
4
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
Gate-Body Leakage
I
"100
nA
GSS
V
DS
= 160 V, V = 0 V
1
GS
V
V
= 160 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 160 V, V = 0 V, T = 175_C
250
DS
GS
J
a
On-State Drain Current
I
V
DS
w 5 V, V = 10 V
10
A
D(on)
GS
V
= 10 V, I = 5 A
0.216
0.270
0.54
GS
D
V
= 10 V, I = 5 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= 10 V, I = 5 A, T = 175_C
0.71
D
J
V
= 6 V, I = 5 A
0.240
15
0.300
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 5 A
S
DS
D
Dynamicb
Input Capacitance
C
C
580
75
30
11
iss
Output Capacitance
pF
V
GS
= 0 V, V = 25 V, f = 1 MHz
DS
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
17
g
c
Gate-Source Charge
Q
Q
2.7
4
V
DS
= 100 V, V = 10 V, I = 10 A
nC
gs
gd
GS
D
c
Gate-Drain Charge
Gate Resistance
R
G
4.0
W
c
Turn-On Delay Time
t
10
35
25
40
15
55
40
60
d(on)
c
Rise Time
t
r
V
= 100 V, R = 10 W
L
= 10 V, R = 2.5 W
GEN G
DD
ns
c
I
D
^ 10 A, V
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
9
S
A
Pulsed Current
I
10
SM
a
I
= 10 A, V = 0 V
GS
Forward Voltage
V
0.9
100
5
1.5
150
8
V
ns
A
F
SD
Reverse Recovery Time
t
rr
I
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
F
= 10 A, di/dt = 100 A/ms
Q
0.25
0.6
mC
rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
www.vishay.com
2
SUM09N20-270
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
10
10
8
V
GS
= 10 thru 6 V
8
6
4
2
0
5 V
6
4
T
= 125_C
C
2
25_C
4 V
-55_C
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
30
25
20
15
10
5
0.5
0.4
0.3
0.2
0.1
0.0
T
= -55_C
C
25_C
125_C
V
= 6 V
GS
V
GS
= 10 V
0
0
2
4
6
8
10
0
2
4
6
8
10
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Capacitance
Gate Charge
20
16
12
8
800
700
600
500
400
300
200
100
0
V
= 100 V
= 10 A
DS
I
D
C
iss
4
C
rss
C
oss
0
0
40
80
120
160
200
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
www.vishay.com
3
SUM09N20-270
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
V
= 10 V
= 5 A
GS
I
D
T = 150_C
J
T = 25_C
J
10
1
-50 -25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
- Junction Temperature (_C)
- Source-to-Drain Voltage (V)
J
SD
Drain Source Breakdown vs.
Junction Temperature
240
230
220
210
200
190
180
I
D
= 1.0 mA
-50 -25
0
25
50
75 100 125 150 175
T
- Junction Temperature (_C)
J
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
www.vishay.com
4
SUM09N20-270
Vishay Siliconix
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
100
10
10
8
10 ms
6
100 ms
Limited
by r
DS(on)
4
1 ms
1
10 ms
T
= 25_C
C
2
Single Pulse
dc, 100 ms
1000
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
T
- Ambient Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
www.vishay.com
5
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