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SUM110N06-05L [VISHAY]

N-Channel 60-V (D-S) 175-C MOSFET; N通道60 -V （D -S ） 175 -C MOSFET
SUM110N06-05L
型号： SUM110N06-05L
厂家： VISHAY    VISHAY
描述：

N-Channel 60-V (D-S) 175-C MOSFET
N通道60 -V （D -S ） 175 -C MOSFET

晶体 晶体管 功率场效应晶体管
文件： 总5页 (文件大小：71K)
中文：  中文翻译
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SUM110N06-05L  
New Product  
Vishay Siliconix  
N-Channel 60-V (D-S) 175_C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D 175_C Junction Temperature  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
0.0052 @ V = 10 V  
GS  
D New Low Thermal Resistance Package  
APPLICATIONS  
a
60  
110  
0.0072 @ V = 4.5 V  
GS  
D Automotive and Industrial  
D
TO-263  
G
G
D S  
Top View  
S
N-Channel MOSFET  
Ordering Information: SUM110N06-05L  
SUM110N06-05L—E3 (Lead Free)  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
V
"20  
a
T
= 25_C  
= 125_C  
110  
C
Continuous Drain Current (T = 175_C)  
I
J
D
a
T
82  
C
A
Pulsed Drain Current  
Avalanche Current  
I
300  
75  
DM  
I
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
280  
mJ  
c
T
= 25_C  
230  
C
b
Maximum Power Dissipation  
P
W
D
d
T
A
= 25_C  
3.75  
Operating Junction and Storage Temperature Range  
T , T  
J
−55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
d
Junction-to-Ambient—PCBMount  
R
40  
thJA  
thJC  
_
C/W  
Junction-to-Case  
R
0.65  
Notes  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
Document Number: 72006  
S-32618—Rev. B, 29-Dec-03  
www.vishay.com  
1
SUM110N06-05L  
Vishay Siliconix  
New Product  
SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
V
V
= 0 V, I = 250 mA  
60  
1
(BR)DSS  
DS  
D
V
V
V
DS  
= V , I = 250 mA  
3
GS(th)  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
Gate-Body Leakage  
I
"100  
nA  
GSS  
V
DS  
= 60 V, V = 0 V  
1
GS  
V
V
= 60 V, V = 0 V, T = 125_C  
50  
Zero Gate Voltage Drain Current  
I
mA  
DS  
GS  
J
DSS  
= 60 V, V = 0 V, T = 175_C  
250  
DS  
GS  
J
a
On-State Drain Current  
I
V
DS  
w 5 V, V = 10 V  
120  
A
D(on)  
GS  
V
= 10 V, I = 30 A  
0.0044  
0.0059  
0.0052  
0.0072  
GS  
D
V
GS  
= 4.5 V, I = 20 A  
D
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
V
= 10 V, I = 30 A, T = 125_C  
0.0085  
0.011  
GS  
D
J
= 10 V, I = 30 A, T = 175_C  
GS  
D
J
a
Forward Transconductance  
g
fs  
V
DS  
= 15 V, I = 30 A  
30  
S
D
Dynamicb  
Input Capacitance  
C
C
4300  
770  
365  
80  
iss  
Output Capacitance  
pF  
nC  
V
GS  
= 0 V, V = 25 V, f = 1 MHz  
DS  
oss  
Reverse Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
120  
g
c
Gate-Source Charge  
Q
Q
19  
V
DS  
= 30 V, V = 10 V, I = 110 A  
GS D  
gs  
gd  
c
Gate-Drain Charge  
20  
c
Turn-On Delay Time  
t
15  
25  
30  
70  
25  
d(on)  
c
Rise Time  
t
r
20  
V
= 30 V, R = 0.27 W  
L
GEN g  
DD  
ns  
c
I
D
^ 110 A, V  
= 10 V, R = 2.5 W  
Turn-Off Delay Time  
t
45  
d(off)  
c
Fall Time  
t
f
15  
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b  
Continuous Current  
I
110  
300  
S
A
Pulsed Current  
I
SM  
a
I
= 110 A, V = 0 V  
GS  
Forward Voltage  
V
1.1  
75  
1.5  
125  
5
V
ns  
A
F
SD  
Reverse Recovery Time  
t
rr  
RM(REC)  
I
F
= 110 A, di/dt = 100 A/ms  
Peak Reverse Recovery Current  
Reverse Recovery Charge  
I
2.5  
Q
0.095  
0.31  
mC  
rr  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Document Number: 72006  
S-32618—Rev. B, 29-Dec-03  
www.vishay.com  
2
SUM110N06-05L  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
250  
250  
200  
150  
100  
50  
V
GS  
= 10 thru 5 V  
200  
150  
100  
50  
4 V  
T
= 125_C  
C
25_C  
3 V  
8
−55_C  
0
0
0
2
4
6
10  
0
1
2
3
4
5
6
V
DS  
− Drain-to-Source Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
200  
160  
120  
80  
0.010  
0.008  
0.006  
0.004  
0.002  
0.000  
T
= −55_C  
C
25_C  
V
GS  
= 4.5 V  
125_C  
V
GS  
= 10 V  
40  
0
0
15  
30  
45  
60  
75  
90  
0
20  
40  
60  
80  
100  
120  
I
D
− Drain Current (A)  
I
D
− Drain Current (A)  
Capacitance  
Gate Charge  
6000  
5000  
4000  
3000  
2000  
1000  
0
20  
16  
12  
8
V
D
= 30 V  
GS  
I
= 110 A  
C
iss  
C
oss  
4
C
rss  
0
0
10  
20  
30  
40  
50  
60  
0
20  
40  
60  
Q − Total Gate Charge (nC)  
g
80  
100 120 140 160  
V
− Drain-to-Source Voltage (V)  
DS  
Document Number: 72006  
S-32618—Rev. B, 29-Dec-03  
www.vishay.com  
3
SUM110N06-05L  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistancevs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.5  
100  
V
D
= 10 V  
GS  
I
= 110 A  
2.0  
1.5  
1.0  
0.5  
0.0  
T = 150_C  
J
T = 25_C  
J
10  
1
−50 −25  
0
25  
50  
75 100 125 150 175  
0.2  
0.4  
V
0.6  
0.8  
1.0  
1.2  
T
− Junction Temperature (_C)  
− Source-to-Drain Voltage (V)  
J
SD  
Drain Source Breakdown  
vs. Junction Temperature  
Avalanche Current vs. Time  
80  
75  
70  
65  
60  
1000  
100  
10  
I
D
= 10 m A  
I
AV  
(A) @ T = 25_C  
J
1
I
(A) @ T = 150_C  
AV  
J
0.1  
−50 −25  
0
25  
50  
75 100 125 150 175  
0.00001 0.0001  
0.001  
t
0.01  
(Sec)  
0.1  
1
T
− Junction Temperature (_C)  
in  
J
Document Number: 72006  
S-32618—Rev. B, 29-Dec-03  
www.vishay.com  
4
SUM110N06-05L  
New Product  
Vishay Siliconix  
THERMAL RATINGS  
Maximum Drain Current vs.  
Case Temperature  
Safe Operating Area  
1000  
120  
100  
80  
60  
40  
20  
0
10 ms  
Limited  
by r  
DS(on)  
100  
10  
100 ms  
1 ms  
10 ms  
100 ms  
dc  
1
T
= 25_C  
C
Single Pulse  
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
V
DS  
− Drain-to-Source Voltage (V)  
T
− Ambient Temperature (_C)  
C
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 72006  
S-32618—Rev. B, 29-Dec-03  
www.vishay.com  
5

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