SUM110N08-07P-E3 [VISHAY]
N-Channel 75-V (D-S) MOSFET; N通道75 -V （D -S ）的MOSFET
| 型号： | SUM110N08-07P-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 75-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM110N08-07P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFETS
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
• 100 % Rg and UIS Tested
110d
0.007 at VGS = 10 V
RoHS
75
69
COMPLIANT
APPLICATIONS
•
Synchronous Rectification
D
TO-263
G
G
D S
Top View
S
N-Channel MOSFET
Ordering Information: SUM110N08-07P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
75
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
110d
TC = 25 °C
TC = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
103
180
50
A
IDM
IAS
Pulsed Drain Current
Avalanche Current
Single Avalanche Energya
EAS
L = 0.1 mH
TC = 25 °C
125
mJ
W
208.3b
3.75
Maximum Power Dissipationa
PD
T
A = 25 °Cc
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Symbol
Limit
40
Unit
RthJA
°C/W
RthJC
Junction-to-Case (Drain)
0.6
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 68637
S-81049-Rev. A, 12-May-08
www.vishay.com
1
SUM110N08-07P
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS(th)
IGSS
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
75
V
Gate Threshold Voltage
Gate-Body Leakage
2.5
4.5
250
1
VDS = 0 V, VGS
=
20 V
nA
VDS = 75 V, VGS = 0 V
DS = 75 V, VGS = 0 V, TJ = 125 °C
DS = 75 V, VGS = 0 V, TJ = 150 °C
VDS ≥ 10 V, VGS = 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
50
µA
250
On-State Drain Currenta
ID(on)
RDS(on)
gfs
70
A
Ω
S
VGS = 10 V, ID = 20 A
0.0057
0.0092
43
0.007
Drain-Source On-State Resistancea
V
GS = 10 V, ID = 20 A, TJ = 125 °C
VDS = 15 V, ID = 20 A
0.0112
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
4250
580
230
69
VGS = 0 V, VDS = 30 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
105
Qgs
Qgd
Rg
VDS = 30 V, VGS = 10 V, ID = 50 A
f = 1 MHz
23
nC
21
1.2
17
2.4
30
10
40
15
Ω
td(on)
tr
td(off)
tf
5
V
DD = 30 V, RL = 0.6 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω
22
6
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
ISM
Continuous Current
110
180
1.5
100
5
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 20 A, VGS = 0 V
0.83
65
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = 75 A, dI/dt = 100 A/µs
2.5
85
150
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68637
S-81049-Rev. A, 12-May-08
SUM110N08-07P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
180
180
150
120
90
V
GS
= 10 thru 9 V
V
= 8 V
GS
150
120
90
60
30
0
V
V
= 7 V
GS
60
T
C
= 125 °C
30
T
C
= 25 °C
4
= 6 V
GS
T
C
= - 55 °C
0
0
1
2
3
4
5
0
2
6
8
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0.0
100
80
60
40
20
0
T
C
= - 55 °C
T
C
= 25 °C
T
C
= 125 °C
T
= 25 °C
C
T
C
= 125 °C
2
T
= - 55 °C
C
0
4
6
8
10
0
14
28
42
56
70
I
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
D
Transfer Characteristics
Transconductance
0.05
0.04
0.03
0.02
0.01
0.00
0.008
0.007
0.006
0.005
0.004
I
= 20 A
D
V
GS
= 10 V
T
= 150 °C
J
T
= 25 °C
9
J
5
6
7
8
10
0
20
40
60
80
100
120
V
GS
- Gate-to-Source Voltage (V)
I
- Drain Current (A)
D
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Drain Current
Document Number: 68637
S-81049-Rev. A, 12-May-08
www.vishay.com
3
SUM110N08-07P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6000
10
8
I
= 50 A
D
V
DS
= 15 V
C
iss
4500
3000
1500
0
V
DS
= 30 V
V
DS
= 60 V
6
4
2
C
oss
C
rss
0
0
15
30
45
60
75
0
20
40
60
80
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
Capacitance
2.0
1.7
1.4
1.1
0.8
0.5
100
10
1
I
= 20 A
D
T
= 25 °C
J
V
GS
= 10 V
T
J
= 150 °C
0.1
0.01
T
= - 55 °C
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 50 - 25
0
25
50
75
100 125 150
V
SD
- Source-to-Drain Voltage (V)
T
J
- Junction Temperature (°C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
0.7
0.2
92
88
84
80
76
I
= 1 mA
D
- 0.3
- 0.8
- 1.3
- 1.8
- 2.3
I
= 1 mA
D
I
= 250 µA
D
- 50 - 25
0
25
50
75
100 125 150
- 50 - 25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
T - Junction Temperature (°C)
J
Threshold Voltage
On-Resistance vs. Junction Temperature
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4
Document Number: 68637
S-81049-Rev. A, 12-May-08
SUM110N08-07P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
100
10
100
Limited by R
*
DS(on)
10 µs
100 µs
1 ms
25 °C
150 °C
10 ms
100 ms, DC
10
1
T
= 25 °C
0.1
C
Single Pulse
BVDSS
0.01
1
0.1
1
10
100
0.00001 0.0001
0.001
0.01
(s)
0.1
1.0
V
DS
- Drain-to-Source Voltage (V)
T
AV
* V > minimum V at which R is specified
DS(on)
GS
GS
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area, Junction-to-Case
150
120
Package Limited
90
60
30
0
* The power dissipation PD is based on TJ(max) = 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is used.
It is used to determine the current rating, when this rating falls below
the package limit.
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*, Junction-to-Case
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68637.
Document Number: 68637
S-81049-Rev. A, 12-May-08
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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