SUM110N10-09 [VISHAY]
N-Channel 100-V (D-S) 200C MOSFET; N沟道100 -V （D -S ） 200C MOSFET
| 型号： | SUM110N10-09 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 100-V (D-S) 200C MOSFET |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM110N10-09
Vishay Siliconix
N-Channel 100-V (D-S) 200_C MOSFET
FEATURES
D TrenchFETr Power MOSFET
D 200_C Junction Temperature
D New Package with Low Thermal Resistance
D 100% Rg Tested
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
100
0.0095 @ V = 10 V
110
GS
APPLICATIONS
D Automotive
− 42-V Power Bus
− DC/DC Conversion
− Motor Drivers
D
TO-263
G
G
D S
Top View
S
N-Channel MOSFET
Ordering Information: SUM110N10-09
SUM110N10-09-E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
100
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
V
"20
a
T
= 25_C
= 125_C
110
C
Continuous Drain Current (T = 175_C)
I
J
D
a
T
87
C
A
Pulsed Drain Current
Avalanche Current
I
440
75
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
280
mJ
c
T
= 25_C
437.5
C
b
Maximum Power Dissipation
P
W
D
d
T
A
= 25_C
3.75
Operating Junction and Storage Temperature Range
T , T
J
−55 to 200
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
Junction-to-Ambient
PCB Mount (TO-263)
R
40
thJA
thJC
C/W
Junction-to-Case (Drain)
R
0.4
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
www.vishay.com
1
SUM110N10-09
Vishay Siliconix
SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 250 mA
100
2
(BR)DSS
DS
D
V
V
V
DS
= V , I = 250 mA
4
GS(th)
GS
D
V
= 0 V, V = "20 V
GS
Gate-Body Leakage
I
"100
nA
mA
DS
GSS
V
= 100 V, V = 0 V
1
DS
GS
V
V
= 100 V, V = 0 V, T = 125_C
50
10
Zero Gate Voltage Drain Current
I
DSS
DS
GS
J
= 100 V, V = 0 V, T = 200_C
mA
A
DS
GS
J
a
On-State Drain Current
I
V
w 5 V, V = 10 V
120
25
D(on)
DS
GS
V
= 10 V, I = 30 A
0.0078
0.0095
0.017
0.025
GS
D
a
V
= 10 V, I = 30 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 10 V, I = 30 A, T = 200_C
GS
D
J
a
Forward Transconductance
g
fs
V
= 15 V, I = 30 A
S
DS
D
Dynamicb
Input Capacitance
C
C
6700
750
280
110
24
iss
Output Capacitance
pF
V
V
= 0 V, V = 25 V, f = 1 MHz
DS
oss
GS
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
160
6.2
g
c
Gate-Source Charge
Q
Q
= 50 V, V = 10 V, I = 85 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
24
Gate Resistance
R
g
1.5
W
c
Turn-On Delay Time
t
20
125
55
30
200
85
d(on)
c
Rise Time
t
r
V
= 50 V, R = 0.6 W
L
GEN g
DD
ns
c
I
D
^ 85 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
f
130
195
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
110
240
S
A
Pulsed Current
I
SM
a
I
= 85 A, V = 0 V
GS
Forward Voltage
V
1.0
70
1.5
140
10
V
ns
A
F
SD
Reverse Recovery Time
t
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
5.5
0.19
I
F
= 50 A, di/dt = 100 A/ms
Q
0.35
mC
rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
www.vishay.com
2
SUM110N10-09
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
250
200
150
100
50
6 V
V
GS
= 10 thru 7 V
200
150
100
50
5 V
T
= 125_C
C
25_C
−55_C
4 V
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
250
200
150
100
50
0.015
0.012
0.009
0.006
0.003
0.000
T
= −55_C
25_C
C
V
GS
= 10 V
125_C
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
10000
8000
6000
4000
2000
0
20
16
12
8
V
D
= 50 V
DS
I
= 85 A
C
iss
4
C
rss
C
oss
0
0
25
50
75
100
0
50
100
150
200
V
DS
− Drain-to-Source Voltage (V)
Q − Total Gate Charge (nC)
g
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
www.vishay.com
3
SUM110N10-09
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
V
GS
= 10 V
I
D
= 30 A
T = 150_C
J
T = 25_C
J
10
1
−50 −25
0
25 50 75 100 125 150 175 200
0
0.3
V − Source-to-Drain Voltage (V)
SD
0.6
0.9
1.2
T
− Junction Temperature (_C)
J
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
125
120
115
110
105
100
95
I
D
= 10 mA
100
I
AV
(A) @ T = 25_C
A
10
1
I
AV
(A) @ T = 150_C
A
90
0.1
−50 −25
0
25 50 75 100 125 150 175 200
0.00001
0.0001
0.001
0.01
(Sec)
0.1
1
t
in
T
− Junction Temperature (_C)
J
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
www.vishay.com
4
SUM110N10-09
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
120
100
80
60
40
20
0
10 ms
100
10
100 ms
Limited
by r
DS(on)
1 ms
10 ms
100 ms
dc
1
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100 125 150 175 200
0.1
1
10
100
1000
V
DS
− Drain-to-Source Voltage (V)
T
− Ambient Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
www.vishay.com
5
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