SUM110P04-04L-E3 [VISHAY]
P-Channel 40-V (D-S) 175 °C MOSFET; P通道40 -V （D -S ） 175 ℃的MOSFET
| 型号： | SUM110P04-04L-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 40-V (D-S) 175 °C MOSFET |
| 文件： | 总6页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM110P04-04L
Vishay Siliconix
P-Channel 40-V (D-S) 175 °C MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
I
D (A)d
- 110
- 110
VDS (V)
rDS(on) (Ω)
Available
•
New Package with Low Thermal Resistance
0.0042 at VGS = - 10 V
0.0062 at VGS = - 4.5 V
RoHS*
- 40
COMPLIANT
S
TO-263
G
G
D S
Top View
Ordering Information: SUM110P04-04L
SUM110P04-04L (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
- 40
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TC = 25 °C
- 110
- 110
- 240
- 75
Continuous Drain Current (TJ = 175 °C)d
ID
TC = 125 °C
A
IDM
IAS
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energya
L = 0.1 mH
TC = 25 °C
EAS
281
mJ
W
375c
3.75
PD
Power Dissipation
T
A = 25 °Cb
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient PCB Mountb
Symbol
Limit
40
Unit
RthJA
°C/W
RthJC
Junction-to-Case
0.4
Notes:
a. Duty cycle ≤ 1 %.
b. When Mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72437
S-61964-Rev. C, 09-Oct-06
www.vishay.com
1
SUM110P04-04L
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
- 40
- 1
V
- 3
100
- 1
VDS = 0 V, VGS
=
20 V
nA
VDS = - 40 V, VGS = 0 V
DS = - 40 V, VGS = 0 V, TJ = 125 °C
DS = - 40 V, VGS = 0 V, TJ = 175 °C
VDS = - 5 V, VGS = - 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
On-State Drain Currenta
- 50
- 250
µA
A
ID(on)
- 120
VGS = - 10 V, ID = - 30 A
0.0034
0.005
0.0042
0.0063
0.0076
0.0062
V
V
GS = - 10 V, ID = - 30 A, TJ = 125 °C
GS = - 10 V, ID = - 30 A, TJ = 175 °C
Drain-Source On-State Resistancea
Forward Transconductancea
rDS(on)
Ω
V
GS = - 4.5 V, ID = - 20 A
gfs
VDS = - 15 V, ID = - 30 A
20
S
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
11200
1650
1200
235
45
VGS = 0 V, VDS = - 25 V, f = 1 MHz
pF
350
VDS = - 20 V, VGS = - 10 V, ID = - 110 A
Qgs
Qgd
Rg
nC
65
3
Ω
td(on)
tr
td(off)
tf
25
40
45
VDD = - 20 V, RL = 0.18 Ω
ID ≅ - 110 A, VGEN = - 10 V, Rg = 2.5 Ω
30
ns
Turn-Off Delay Timec
Fall Timec
190
110
300
165
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
ISM
Continuous Current
- 110
- 240
- 1.5
100
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = - 85 A, VGS = 0 V
- 1.0
65
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = - 85 A, di/dt = 100 A/µs
- 3.7
0.12
- 5.6
0.28
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72437
S-61964-Rev. C, 09-Oct-06
SUM110P04-04L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
200
175
150
125
100
75
240
V
GS
= 10 thru 5 V
200
160
120
80
4 V
T
= 125 °C
C
50
25 °C
40
25
3 V
-
55 °C
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Gate-to-Source Voltage (V)
Transfer Characteristics
0
2
4
6
8
10
V
GS
-
V
- Drain-to-Source Voltage (V)
DS
Output Characteristics
0.010
0.008
0.006
0.004
0.002
0.000
240
200
160
120
80
T
=
-
55 °C
C
25 °C
125 °C
V
GS
= 4.5 V
V
GS
= 10 V
40
0
0
20
40
60
80
100
120
0
15
30
45
60
75
90
I
D
- Drain Current (A)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
20
16
12
8
14000
12000
10000
8000
6000
4000
2000
0
C
V
D
= 20 V
iss
DS
= 110 A
I
C
oss
4
C
rss
0
0
50 100 150 200 250 300 350 400 450
0
5
10
15
20
25
30
35
40
Q
-
Total Gate Charge (nC)
g
V
DS
-
Drain-to-Source Voltage (V)
Gate Charge
Capacitance
Document Number: 72437
S-61964-Rev. C, 09-Oct-06
www.vishay.com
3
SUM110P04-04L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
2.0
100
V
D
= 10 V
GS
= 30 A
I
1.7
1.4
1.1
0.8
T = 25 °C
J
T = 150 °C
J
10
0.5
-
1
50
-
25
0
25
50
75 100 125 150 175
0.0
0.3
0.6
0.9
1.2
T
-
Junction Temperature (°C)
J
V
SD
-
Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
48
46
44
42
40
38
I
D
= 250 µA
100
10
1
I
(A) at T = 25 °C
A
AV
I
AV
(A) at T = 150 °C
A
0.1
- 50 - 25
0
25
50
75 100 125 150 175
0.0001
0.001
0.01
0.1
(Sec)
1
10
t
T
- Junction Temperature (°C)
J
in
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
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4
Document Number: 72437
S-61964-Rev. C, 09-Oct-06
SUM110P04-04L
Vishay Siliconix
THERMAL RATINGS
300
1000
Limited by r
DS(on)
250
10 µs
100 µs
100
10
200
1 ms
Limited
by Package
150
100
50
10 ms
100 ms
dc
1
T
= 25 °C
C
Single Pulse
0
0.1
0
25
50
75
100
125
150
175
0.1
1
- Drain-to-Source Voltage (V)
DS
10
100
T
- Case Temperature (°C)
C
V
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
Single Pulse
2. Per Unit Base = R
= 62.5 °C/W
thJA
(t)
3. TJM - T = P
Z
A
DM thJA
4. Surface Mounted
0.01
-3
10
-2
10
- 4
1
10
-1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72437.
Document Number: 72437
S-61964-Rev. C, 09-Oct-06
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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