SUM110P04-05 [VISHAY]
P-Channel 40-V (D-S) MOSFET; P通道40 -V （D -S ）的MOSFET
| 型号： | SUM110P04-05 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 40-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM110P04-05
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
I
D (A)a
VDS (V)
rDS(on) (Ω)
Qg (Typ.)
RoHS
0.005 at VGS = - 10 V
- 40
- 110
185 nC
COMPLIANT
TO-263
S
G
Drain Connected to Tab
G
D
S
Top View
D
Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 40
20
V
VGS
- 110a
- 110a
39b, c
TC = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 175 °C)
ID
TA = 25 °C
TA = 70 °C
33b, c
A
IDM
IS
Pulsed Drain Current
240
TC = 25 °C
TA = 25 °C
110
Continuous Source-Drain Diode Current
10b, c
75
IAS
Avalanche Current
L = 0.1 mH
TC = 25 °C
EAS
Single-Pulse Avalanche Energy
281
375
262
mJ
W
T
C = 70 °C
A = 25 °C
PD
Maximum Power Dissipation
15b, c
T
10.5b, c
- 55 to 175
260
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
RthJA
t ≤ 10 s
8
10
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
0.33
0.4
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
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1
SUM110P04-05
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 40
V
V
DS Temperature Coefficient
- 40
- 5.5
- 3
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 2
- 4
100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 40 V, VGS = 0 V
DS = - 40 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = - 10 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
V
- 10
ID(on)
rDS(on)
gfs
- 120
A
Ω
S
Drain-Source On-State Resistancea
Forward Transconductancea
VGS = - 10 V, ID = - 20 A
0.0041
75
0.005
VDS = - 15 V, ID = - 20 A
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
11300
1510
1000
185
48
VDS = - 25 V, VGS = 0 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Charge
280
Qgs
Qgd
Rg
VDS = - 20 V, VGS = - 10 V, ID = - 110 A
f = 1 MHz
Gate-Source Charge
nC
Gate-Drain Charge
42
Gate Resistance
4.0
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
25
40
440
165
55
Rise Time
290
110
35
V
DD = - 20 V, RL = 0.18 Ω
ns
ID ≅ - 110 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
IS = - 20 A
- 110
- 240
- 1.5
105
A
- 0.8
70
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
130
37
200
IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C
ns
tb
33
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73493
S-80274-Rev. B, 11-Feb-08
SUM110P04-05
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
200
40
30
20
10
0
V
GS
= 10 thru 7 V
6 V
160
120
80
40
0
5 V
25 °C
- 55 °C
T
C
= 125 °C
4 V
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.010
0.008
16000
14000
12000
10000
8000
6000
4000
2000
0
C
iss
0.006
0.004
0.002
0.000
V
GS
= 10 V
C
oss
C
rss
0
20
40
60
80
100
120
0
10
20
30
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
1.5
1.2
0.9
0.6
10
8
I
= 20 A
D
V
= 10 V
GS
V
DS
= 20 V
6
V
DS
= 32 V
4
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
40
80
120
160
200
240
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
www.vishay.com
3
SUM110P04-05
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
0.04
0.03
0.02
0.01
0.00
100
T
J
= 150 °C
10
T
A
= 150 °C
T
= 25 °C
J
T
A
= 25 °C
1
0.0
0
1
2
3
4
5
6
7
8
9
10
0.3
0.6
0.9
1.2
1.5
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.1
0.9
35
30
I
D
=10 mA
0.7
25
20
15
10
0.5
0.3
0.1
T
= 25 °C
C
- 0.1
- 0.3
- 0.5
5
0
- 50 - 25
0
25
50
75 100 125 150 175
0.0001 0.001 0.01
0.1
1.00
10
100 1000
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
Limited by r
*
DS(on)
10 µs
100 µs
100
10
1
1 ms
10 ms
100 ms
DC
Single Pulse
= 25 °C
T
C
1
10
100
0.1
V
DS
- Drain-to-Source Voltage (V)
*V > minimum V
GS
at which r
is specified
DS(on)
GS
Safe Operating Area, Junction-to-Case
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Document Number: 73493
S-80274-Rev. B, 11-Feb-08
SUM110P04-05
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
240
210
180
150
120
90
400
350
300
250
200
150
100
50
Package Limited
60
30
0
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Max. Avalanche and Drain Current
vs. Case Temperature*
Power Derating, Junction-to-Case
1
0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
1
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73493.
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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