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SUM23N15-73_08 [VISHAY]

N-Channel 150-V (D-S) 175C MOSFET; N沟道150 -V （ D- S） 175℃ MOSFET
SUM23N15-73_08
型号： SUM23N15-73_08
厂家： VISHAY    VISHAY
描述：

N-Channel 150-V (D-S) 175C MOSFET
N沟道150 -V （ D- S） 175℃ MOSFET
文件： 总6页 (文件大小：69K)
中文：  中文翻译
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SUM23N15-73  
Vishay Siliconix  
N-Channel 150-V (D-S) 175_C MOSFET  
FEATURES  
D TrenchFETr Power MOSFETS  
D 175_C Junction Temperature  
D New Low Thermal Resistance Package  
D PWM Optimized  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
0.073 @ V = 10 V  
23  
GS  
APPLICATIONS  
150  
0.077 @ V = 6 V  
22.5  
GS  
D Primary Side Switch  
D
TO-263  
G
G
D S  
Top View  
S
N-Channel MOSFET  
Ordering Information: SUM23N15-73  
SUM23N15-73  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
150  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
V
"20  
T
= 25_C  
= 125_C  
23  
13.4  
35  
C
Continuous Drain Current (T = 175_C)  
I
J
D
T
C
A
Pulsed Drain Current  
Avalanche Current  
I
DM  
I
25  
AR  
a
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
31  
mJ  
b
T
T
= 25_C  
100  
C
a
Maximum Power Dissipation  
P
W
D
c
= 25_C  
3.75  
A
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
c
Junction-to-Ambient (PCB Mount)  
R
40  
thJA  
thJC  
_
C/W  
Junction-to-Case (Drain)  
R
1.5  
Notes  
a. Duty cycle v 1%.  
b. See SOA curve for voltage derating.  
c. When mounted on 1” square PCB (FR-4 material).  
Document Number: 72143  
S-03535—Rev. A, 24-Mar-03  
www.vishay.com  
1
SUM23N15-73  
Vishay Siliconix  
SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
V
V
= 0 V, I = 250 mA  
150  
2
(BR)DSS  
DS  
D
V
V
V
DS  
= V , I = 250 mA  
4
GS(th)  
GS  
D
Gate-Body Leakage  
I
V
DS  
= 0 V, V = "20 V  
"100  
nA  
GSS  
GS  
V
DS  
= 120 V, V = 0 V  
1
GS  
V
V
= 120 V, V = 0 V, T = 125_C  
50  
Zero Gate Voltage Drain Current  
I
mA  
DS  
GS  
J
DSS  
= 120 V, V = 0 V, T = 175_C  
250  
DS  
GS  
J
a
On-State Drain Current  
I
V
DS  
w 5 V, V = 10 V  
35  
10  
A
D(on)  
GS  
V
GS  
= 10 V, I = 15 A  
0.059  
0.062  
0.073  
0.140  
0.168  
0.077  
D
V
= 10 V, I = 15 A, T = 125_C  
GS  
D
J
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 10 V, I = 15 A, T = 175_C  
GS  
D
J
V
GS  
= 6 V, I = 10 A  
D
a
Forward Transconductance  
g
fs  
V
DS  
= 15 V, I = 25 A  
S
D
Dynamicb  
Input Capacitance  
C
C
1290  
160  
70  
iss  
Output Capacitance  
pF  
V
V
= 0 V, V = 25 V, f = 1 MHz  
DS  
oss  
GS  
Reverse Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
22  
35  
g
c
Gate-Source Charge  
Q
Q
6
= 75 V, V = 10 V, I = 23 A  
nC  
gs  
gd  
DS  
GS  
D
c
Gate-Drain Charge  
7.5  
Gate Resistance  
R
G
4.0  
W
c
Turn-On Delay Time  
t
10  
60  
30  
45  
15  
90  
43  
70  
d(on)  
c
Rise Time  
t
r
V
= 75 V, R = 3.26 W  
L
= 10 V, R = 2.5 W  
GEN G  
DD  
ns  
I
D
^ 23 A, V  
c
Turn-Off Delay Time  
t
d(off)  
c
Fall Time  
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b  
Continuous Current  
I
35  
23  
S
A
Pulsed Current  
I
SM  
a
I
= 23 A, V = 0 V  
GS  
Forward Voltage  
V
1.0  
100  
5
1.5  
150  
8
V
ns  
A
F
SD  
Reverse Recovery Time  
t
rr  
I
RM(REC)  
Peak Reverse Recovery Current  
Reverse Recovery Charge  
I
F
= 23 A, di/dt = 100 A/ms  
Q
0.25  
0.6  
mC  
rr  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Document Number: 72143  
S-03535—Rev. A, 24-Mar-03  
www.vishay.com  
2
SUM23N15-73  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
35  
35  
28  
21  
14  
7
V
GS  
= 10 thru 6 V  
30  
25  
20  
15  
10  
5
T
= 125_C  
C
5 V  
25_C  
-55_C  
4 V  
12  
0
0
0
3
6
9
15  
0
1
2
3
4
5
6
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
50  
40  
30  
20  
10  
0
0.12  
0.09  
0.06  
0.03  
0.00  
T
= -55_C  
C
25_C  
V
= 6 V  
GS  
125_C  
V
GS  
= 10 V  
0
5
10  
D
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
35  
I
- Drain Current (A)  
I
D
- Drain Current (A)  
Capacitance  
Gate Charge  
2000  
1600  
1200  
800  
400  
0
20  
16  
12  
8
V
= 75 V  
= 23 A  
DS  
I
D
C
iss  
4
C
rss  
C
oss  
0
0
30  
60  
90  
120  
150  
0
8
16  
24  
32  
40  
V
DS  
- Drain-to-Source Voltage (V)  
Q
g
- Total Gate Charge (nC)  
Document Number: 72143  
S-03535—Rev. A, 24-Mar-03  
www.vishay.com  
3
SUM23N15-73  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0.0  
100  
V
= 10 V  
= 15 A  
GS  
I
D
T = 150_C  
J
T = 25_C  
J
10  
1
-50 -25  
0
25  
50  
75 100 125 150 175  
0
0.3  
V
0.6  
0.9  
1.2  
1.5  
T
- Junction Temperature (_C)  
- Source-to-Drain Voltage (V)  
J
SD  
Drain Source Breakdown vs.  
Junction Temperature  
190  
180  
170  
160  
150  
140  
I
D
= 1.0 mA  
-50 -25  
0
25  
50  
75 100 125 150 175  
T
- Junction Temperature (_C)  
J
Document Number: 72143  
S-03535—Rev. A, 24-Mar-03  
www.vishay.com  
4
SUM23N15-73  
Vishay Siliconix  
THERMAL RATINGS  
Maximum Avalanche and Drain Current  
vs. Case Temperature  
Safe Operating Area  
100  
10  
25  
20  
15  
10  
5
Limited  
by r  
DS(on)  
10 ms  
100 ms  
1 ms  
10 ms  
1
100 ms  
dc  
T
= 25_C  
C
Single Pulse  
0
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
1000  
V
DS  
- Drain-to-Source Voltage (V)  
T
- Ambient Temperature (_C)  
C
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 72143  
S-03535—Rev. A, 24-Mar-03  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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