SUM36N20-54P-E3 [VISHAY]
N-Channel 200-V (D-S) MOSFET; N沟道200 -V （D -S ）的MOSFET
| 型号： | SUM36N20-54P-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 200-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM36N20-54P
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFETS
V(BR)DSS (V)
RDS(on) (Ω)
ID (A)
36
Qg (Typ.)
175 °C Junction Temperature
100 % Rg and UIS Tested
RoHS
0.053 at VGS = 15 V
0.054 at VGS = 10 V
200
57
COMPLIANT
36
APPLICATIONS
•
Power Supply
•
Lighting Systems
D
TO-263
G
G
D S
S
Top View
Ordering Information: SUM36N20-54P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
200
25
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
TC = 25 °C
36
Continuous Drain Current (TJ = 175 °C)
ID
TC = 100 °C
22.6
80
A
IDM
IAS
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energya
20
L = 0.1 mH
TC = 25 °C
EAS
20
mJ
W
166b
3.12
Maximum Power Dissipationa
PD
T
A = 25 °Cc
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Symbol
Limit
40
Unit
RthJA
°C/W
RthJC
Junction-to-Case (Drain)
0.75
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 74295
S-80794-Rev. B, 14-Apr-08
www.vishay.com
1
SUM36N20-54P
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V(BR)DSS
VGS(th)
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
200
2.5
V
Gate Threshold Voltage
4.5
100
300
1
VDS = 0 V, VGS
VDS = 0 V, VGS
=
=
20 V
25 V
IGSS
Gate-Body Leakage
nA
VDS = 200 V, VGS = 0 V
DS = 200 V, VGS = 0 V, TJ = 100 °C
DS = 200 V, VGS = 0 V, TJ = 150 °C
VDS ≥ 10 V, VGS = 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
On-State Drain Currenta
25
µA
A
250
ID(on)
40
25
VGS = 10 V, ID = 20 A
0.044
0.054
0.053
0.098
0.130
V
GS = 15 V, ID = 20 A
0.0435
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = 10 V, ID = 20 A, TJ = 100 °C
GS = 10 V, ID = 20 A, TJ = 150 °C
VDS = 15 V, ID = 20 A
V
Forward Transconductancea
Dynamicb
gfs
S
Ciss
Coss
Crss
Input Capacitance
3100
300
135
85
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 100 V, VGS = 15 V, ID = 50 A
Output Capacitance
Reverse Transfer Capacitance
pF
127
85
Total Gate Chargec
Qg
57
nC
Ω
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Qgs
Qgd
Rg
V
DS = 100 V, VGS = 10 V, ID = 50 A
f = 1 MHz
14
20
1.2
16
1.8
25
td(on)
tr
td(off)
tf
170
27
260
42
V
DD = 100 V, RL = 2 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω
9
18
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
ISM
VSD
trr
Continuous Current
36
80
A
Pulsed Current
Forward Voltagea
IF = 20 A, VGS = 0 V
0.86
116
9
1.5
175
14
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
IRM(REC)
Qrr
IF = 40 A, di/dt = 100 A/µs
0.53
84
0.8
µC
ta
nS
tb
32
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74295
S-80794-Rev. B, 14-Apr-08
SUM36N20-54P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
80
64
48
32
16
0
V
GS
= 15, 12, 10, 8 V
80
60
40
20
0
6 V
T
C
= 125 °C
25 °C
- 55 °C
5 V
0
0
0
3
6
9
12
15
60
15
0
0
0
2
4
6
8
10
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
0.065
120
100
80
60
40
20
0
T
= - 55 °C
C
0.060
0.055
0.050
0.045
0.040
25 °C
V
GS
= 10 V
125 °C
V
= 15 V
GS
16
32
48
64
80
10
20
30
40
50
I
- Drain Current (A)
I
- Drain Current (A)
D
D
Transconductance
On-Resistance vs. Drain Current
4200
3360
2520
1680
840
0.18
0.15
0.12
0.09
0.06
0.03
I
= 20 A
D
C
iss
T
= 125 °C
J
C
rss
T
= 25 °C
J
C
oss
0
20
40
60
80
100
3
6
9
12
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Capacitance
Document Number: 74295
S-80794-Rev. B, 14-Apr-08
www.vishay.com
3
SUM36N20-54P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
2.9
2.4
1.9
1.4
0.9
0.4
= 50 V, 100 V
V
DS
I
D
= 20 A
I
= 50A
D
12
9
V
GS
= 10 V
V
GS
= 15 V
6
3
0
0
16
32
48
64
80
96
- 50 - 25
0
25
50
75 100 125 150 175
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
On-Resistance vs. Junction Temperature
Gate Charge
0.7
0.2
100000
10000
I
= 5 mA
D
- 0.3
- 0.8
- 1.3
- 1.8
- 2.3
T
J
=150 °C
1000
0.100
0.010
0.001
T
J
= 25 °C
I
= 250 µA
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 50 - 25
0
25
50
75 100 125 150 175
T
J
- Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Threshold Voltage
250
100
I
= 10 mA
D
240
230
220
210
200
190
150 °C
25 °C
10
1
0.00001
0.0001
0.001
- (s)
0.01
0.1
- 50 - 25
0
25
50
75 100 125 150 175
t
av
T
- Temperature Junction (°C)
J
Single Pulse Avalanche
Current Capability vs. Time
Drain Source Breakdown vs.
Junction Temperature
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Document Number: 74295
S-80794-Rev. B, 14-Apr-08
SUM36N20-54P
Vishay Siliconix
THERMAL RATINGS
40
100
10
Limited by R
DS (on)
*
32
24
16
8
100 µs
1 ms
T
= 25 °C
C
Single Pulse
1
10 ms
100 ms
DC
0
0.1
0.1
1
10
100
1000
0
25
50
75
100
125
150
V
DS
- Drain-to-Source Voltage (V)
T
C
- Case Temperature (°C)
* V
GS
minimum V
at which R
is specified
>
GS
DS(on)
Safe Operating Area
Maximum Drain Curent vs. Case Temperature
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74295
Document Number: 74295
S-80794-Rev. B, 14-Apr-08
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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