SUM90N06-4M4P [VISHAY]
N-Channel 60-V (D-S) MOSFET; N通道60 -V （D -S ）的MOSFET
| 型号： | SUM90N06-4M4P |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 60-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM90N06-4m4P
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFETS
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Qg (Typ)
175 °C Junction Temperature
100 % Rg and UIS Tested
90d
0.0044 at VGS = 10 V
60
105
RoHS
COMPLIANT
APPLICATIONS
•
Power Supply
- Secondary Synchronous Rectification
• Industrial
• OR-ing
D
TO-263
G
G
D S
Top View
S
Ordering Information: SUM90N06-4m4P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
60
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
90d
TC = 25 °C
TC = 70 °C
Continuous Drain Current (TJ = 175 °C)
ID
90d
240
70
A
IDM
IAS
Pulsed Drain Current
Avalanche Current
Single Avalanche Energya
EAS
L = 0.1 mH
TC = 25 °C
245
mJ
W
300b
3.75
Maximum Power Dissipationa
PD
T
A = 25 °Cc
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Symbol
Limit
40
Unit
RthJA
°C/W
RthJC
Junction-to-Case (Drain)
0.5
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
www.vishay.com
1
SUM90N06-4m4P
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Typ
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
60
V
Gate Threshold Voltage
Gate-Body Leakage
2.5
4.5
250
1
VDS = 0 V, VGS
=
20 V
nA
VDS = 60 V, VGS = 0 V
DS = 60 V, VGS = 0 V, TJ = 125 °C
DS = 60 V, VGS = 0 V, TJ = 150 °C
VDS ≥ 10 V, VGS = 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
50
µA
250
On-State Drain Currenta
ID(on)
rDS(on)
gfs
70
A
Ω
S
VGS = 10 V, ID = 20 A
0.0036
0.0059
60
0.0044
0.0077
Drain-Source On-State Resistancea
V
GS = 10 V, ID = 20 A, TJ = 125 °C
VDS = 15 V, ID = 20 A
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
6190
990
340
105
29
VGS = 0 V, VDS = 30 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
160
Qgs
Qgd
Rg
VDS = 30 V, VGS = 10 V, ID = 85 A
f = 1 MHz
nC
28
1.4
23
2.8
35
25
55
15
Ω
td(on)
tr
td(off)
tf
15
V
DD = 30 V, RL = 0.4 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω
36
8
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
ISM
Continuous Current
85
240
1.5
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 30 A, VGS = 0 V
0.84
61
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
100
4.5
IRM(REC)
Qrr
IF = 75 A, di/dt = 100 A/µs
3.0
91
140
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
SUM90N06-4m4P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
150
120
90
60
30
0
T
= - 55 °C
C
V
GS
= 10 thru 7 V
100
80
60
40
20
0
T
= 25 °C
C
T
= 125 °C
C
6 V
0
1
2
3
4
5
0
4
0
12
24
36
48
60
10
60
V
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
DS
D
Output Characteristics
Transconductance
100
80
60
40
20
0
0.05
0.04
0.03
0.02
0.01
0
I
D
= 20 A
T
= 125 °C
C
T
= 25 °C
C
T
A
= 150 °C
T
= - 55 °C
C
T
= 25 °C
A
5
6
8
9
0
2
4
6
8
10
V
- Gate-to-Source Voltage (V)
GS
V
- Gate-to-Source Voltage (V)
GS
On-resistance vs. Gate-to-Source Voltage
Transfer Characteristics
0.0042
0.0040
0.0038
0.0036
0.0034
0.0032
9000
7200
5400
3600
1800
0
C
iss
V
= 10 V
GS
C
oss
C
rss
0
20
40
60
80
100
12
V
24
36
48
- Drain-to-Source Voltage (V)
DS
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
www.vishay.com
3
SUM90N06-4m4P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
1.7
1.4
1.1
0.8
0.5
0.8
I
D
= 20 A
0.2
- 0.4
- 1.0
- 1.6
- 2.2
V
GS
= 10 V
I
D
= 5 mA
I
D
= 250 µA
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
T
- Temperature (°C)
J
T
- Junction Temperature (°C)
J
Threshold Voltage
On-Resistance vs. Junction Temperature
10
8
74
72
70
68
66
64
62
60
58
I
D
= 85 A
I
D
= 1 mA
V
= 30 V
DS
V
= 20 V
DS
6
V
DS
= 40 V
4
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
22
44
66
88
110
T
- Junction Temperature (°C)
J
Q
- Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
185
148
111
74
100
10
T
= 150 °C
J
T
= 25 °C
J
1
Package Limited
0.1
0.01
37
0
0.001
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
T
- Case Temperature (°C)
C
Source-Drain Diode Forward Voltage
Maximum Drain Current vs. Case Temperature
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4
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
SUM90N06-4m4P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
1000
100
10
*Limited by r
DS(on)
T = 25 °C
J
T = 150 °C
J
1 ms
10
10 ms
100 ms
DC
1
T
= 25 °C
C
Single Pulse
1
10
0.1
0.1
-5
-4
-3
-2
-1
10
10
10
(sec)
10
1
1
10
100
t
V
DS
- Drain-to-Source Voltage (V)
AV
*V
GS
minimum V at which r
is specified
Single Pulse Avalanche Current Capability vs. Time
GS
DS(on)
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74642.
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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