SUM90N08-7M6P [VISHAY]

SUM90N08-7m6P;


型号：	SUM90N08-7M6P
厂家：	VISHAY
描述：	SUM90N08-7m6P
文件：	总6页 (文件大小：119K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SUM90N08-7m6P

Vishay Siliconix

N-Channel 75-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFETS

V_(BR)DSS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

175 °C Junction Temperature

100 % R_gand UIS Tested

90^d

0.0076 at V_GS= 10 V

RoHS

COMPLIANT

APPLICATIONS

•

Power Supply

- Secondary Synchronous Rectification

• Industrial

TO-263

D S

Top View

Ordering Information: SUM90N08-7m6P-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

90^d

T_C= 25 °C

T_C= 70 °C

Continuous Drain Current (T_J= 175 °C)

I_D

200

I_DM

I_AS

Pulsed Drain Current

Avalanche Current

Single Avalanche Energy^a

E_AS

L = 0.1 mH

T_C= 25 °C

125

150^b

3.75

Maximum Power Dissipation^a

P_D

_A= 25 °C^c

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)^c

Symbol

Limit

Unit

R_thJA

°C/W

R_thJC

Junction-to-Case (Drain)

Notes:

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

d. Package limited.

Document Number: 69578

S-80799-Rev. B, 14-Apr-08

www.vishay.com

SUM90N08-7m6P

Vishay Siliconix

SPECIFICATIONS T = 25 °C, unless otherwise noted

Typ.

Parameter

Symbol

Test Conditions

Min.

Max.

Unit

Static

V_(BR)DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250 µA

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

2.8

4.8

250

V_DS= 0 V, V_GS

20 V

V_DS= 75 V, V_GS= 0 V

_DS= 75 V, V_GS= 0 V, T_J= 125 °C

_DS= 75 V, V_GS= 0 V, T_J= 150 °C

V_DS≥ 10 V, V_GS= 10 V

I_DSS

Zero Gate Voltage Drain Current

µA

250

On-State Drain Current^a

I_D(on)

R_DS(on)

g_fs

V_GS= 10 V, I_D= 30 A

0.0063

0.0108

0.0076

0.0130

Drain-Source On-State Resistance^a

_GS= 10 V, I_D= 30 A, T_J= 125 °C

V_DS= 15 V, I_D= 30 A

Forward Transconductance^a

Dynamic^b

C_iss

C_oss

C_rss

Q_g

Input Capacitance

3528

470

178

V_GS= 0 V, V_DS= 30 V, f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge^c

Gate-Source Charge^c

Gate-Drain Charge^c

Gate Resistance

Turn-On Delay Time^c

Rise Time^c

Q_gs

Q_gd

R_g

V_DS= 38 V, V_GS= 10 V, I_D= 15 A

f = 1 MHz

1.8

3.5

t_d(on)

t_r

t_d(off)

t_f

_DD= 38 V, R_L= 3.1 Ω

Turn-Off Delay Time^c

Fall Time^c

I_D≅ 12.5 A, V_GEN= 10 V, R_g= 1 Ω

Source-Drain Diode Ratings and Characteristics T_C= 25 °C^b

I_S

I_SM

Continuous Current

200

1.5

Pulsed Current

Forward Voltage^a

V_SD

t_rr

I_F= 30 A, V_GS= 0 V

0.85

Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

100

4.5

I_RM(REC)

Q_rr

I_F= 75 A, di/dt = 100 A/µs

2.7

140

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

Document Number: 69578

S-80799-Rev. B, 14-Apr-08

SUM90N08-7m6P

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

200

160

120

= 10 thru 8 V

180

160

140

120

100

7 V

6 V

= 125 °C

T = - 55 °C

= 25 °C

4 V

5 V

- Drain-to-Source Voltage (V)

- Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

0.20

= - 55 °C

25 °C

= 30 A

0.15

0.10

0.05

0.00

= 25 °C

125 °C

= 150 °C

- Drain Current (A)

- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage vs.

Temperature

Transconductance

0.009

0.008

0.007

0.006

0.005

0.004

4500

4000

3500

3000

2500

2000

1500

1000

500

iss

= 10 V

oss

rss

20 40 60 80 100 120 140 160 180 200

- Drain Current (A)

- Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

Document Number: 69578

S-80799-Rev. B, 14-Apr-08

www.vishay.com

SUM90N08-7m6P

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1.0

0.5

2.5

2.0

= 30 A, V

= 10 V

0.0

= 5 mA

1.5

1.0

0.5

0.0

- 0.5

- 1.0

- 1.5

- 2.0

= 250 µA

- 50 - 25

75 100 125 150 175

- 50 - 25

75 100 125 150 175

- Junction Temperature (°C)

Threshold Voltage

On-Resistance vs. Junction Temperature

= 15 A

= 38 V

= 250 µA

= 60 V

- 50 - 25

T - Junction Temperature (°C)

75 100 125 150 175

- Total Gate Charge (nC)

On-Resistance vs. Junction Temperature

Gate Charge

100

120

100

= 150 °C

1.0

0.1

0.01

= 25 °C

0.001

0.0

0.2

0.4

0.6

0.8

1.0

100

125

150

175

- Source-to-Drain Voltage (V)

- Case Temperature (°C)

Source-Drain Diode Forward Voltage

Maximum Drain Current vs. Case Temperature

www.vishay.com

Document Number: 69578

S-80799-Rev. B, 14-Apr-08

SUM90N08-7m6P

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1000

100

Limited by R

DS(on)

100 µs

1 ms

10 ms, 100 ms

1 s, 10 s, DC

= 25 °C

0.1

0.01

Single Pulse

BVDSS

0.000001

0.00001

0.0001

(s)

0.001

0.01

0.1

100

- Drain-to-Source Voltage (V)

* V

minimum V at which r

is specified

DS(on)

Single Pulse Avalanche Current Capability vs. Time

Safe Operating Area

Duty Cycle = 0.5

0.2

0.1

0.05

0.1

0.02

Single Pulse

0.01

-4

-3

-2

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?69578.

Document Number: 69578

S-80799-Rev. B, 14-Apr-08

www.vishay.com

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

SUM90N08-7M6P [VISHAY]

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