SUM90P10-19L-E3 [VISHAY]
P-Channel 100-V (D-S) MOSFET; P沟道100 -V （D -S ）的MOSFET
| 型号： | SUM90P10-19L-E3 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 100-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM90P10-19L
Vishay Siliconix
P-Channel 100-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
VDS (V)
rDS(on) (Ω)
ID (A) Qg (Typ)
RoHS
0.019 at VGS = - 10 V
0.021 at VGS = - 4.5 V
- 90
COMPLIANT
- 100
97 nC
- 85
S
TO-263
G
Drain Connected to Tab
G
D
S
D
Top View
Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Limit
- 100
20
Unit
V
VGS
TC = 25 °C
- 90
- 52
- 17.2b, c
- 9.9b, c
- 90
- 250
- 9b, c
- 70
T
C = 125 °C
TA = 25 °C
TA = 125 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
IAS
Avalanche Current
L = 0.1 mH
EAS
mJ
W
Single-Pulse Avalanche Energy
245
375
125
13.6b, c
4.5b, c
TC = 25 °C
T
C = 125 °C
TA = 25 °C
TA = 125 °C
PD
Maximum Power Dissipation
TJ, Tstg
°C
Operating Junction and Storage Temperature Range
- 50 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
8
Maximum
Unit
t ≤ 10 sec
11
°C/W
RthJC
Steady State
0.33
0.4
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73474
S-71207-Rev. D, 18-Jun-07
www.vishay.com
1
SUM90P10-19L
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VDS
VGS = 0 V, ID = - 250 µA
Drain-Source Breakdown Voltage
- 100
V
V
DS Temperature Coefficient
ΔVDS/TJ
- 125
5.9
ID = - 250 µA
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
ΔV
/T
GS(th) J
V
VDS = VGS , ID = - 250 µA
- 1
- 3
100
- 1
V
GS(th)
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 100 V, VGS = 0 V
DS = - 100 V, VGS = 0 V, TJ = 175 °C
VDS ≥ 10 V, VGS = - 10 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 500
ID(on)
- 90
VGS = - 10 V, ID = - 20 A
0.0156
0.0173
80
0.019
0.021
Drain-Source On-State Resistancea
rDS(on)
gfs
Ω
S
VGS = - 4.5 V, ID = - 15 A
Forward Transconductancea
VDS = - 15 V, ID = - 20 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
11100
700
1690
217
97
VDS = - 50 V, VGS = 0 V, f = 1 MHz
pF
VDS = - 50 V, VGS = - 10 V, ID = - 90 A
326
146
Qg
Total Gate Charge
nC
Ω
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
DS = - 50 V, VGS = - 4.5 V, ID = - 90 A
f = 1 MHz
42
51
3.5
td(on)
tr
td(off)
tf
20
30
855
220
1300
510
145
870
V
DD = - 50 V, RL = 0.56 Ω
ns
ID ≅ - 90 A, VGEN = - 10 V, RG = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode
Current
Pulse Diode Forward Currenta
IS
TC = 25 °C
IS = - 20 A
- 90
A
ISM
- 250
- 1.5
VSD
Body Diode Voltage
- 0.8
80
V
Body Diode Reverse Recovery
Time
trr
120
330
ns
Body Diode Reverse Recovery
Charge
Qrr
220
nC
ns
IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C
ta
tb
Reverse Recovery Fall Time
Reverse Recovery Rise Time
56
24
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73474
S-71207-Rev. D, 18-Jun-07
SUM90P10-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
180
40
30
20
10
0
150
120
90
60
30
0
V
GS
= 10 thru 4V
25 °C
3 V
T
C
= 125 °C
- 55 °C
0
1
2
3
4
0.0
1.0
2.0
3.0
4.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
0.020
0.010
0.000
15000
12000
9000
6000
3000
0
V
GS
= 4.5 V
C
iss
V
GS
= 10
C
rss
C
oss
0
20
40
60
80
100
120
0
20
40
60
80
100
I
D
– Drain Current (A)
V
DS
– Drain-to-Source (V)
On-Resistance vs. Drain Current
Capacitance
10.0
8.0
6.0
4.0
2.0
0.0
2.5
2.1
1.7
1.3
0.9
0.5
V
= 10 V
= 20 A
GS
= - 90 A
I
D
I
D
V
DS
= 50 V
V
DS
= 80 V
0.0
40.0
80.0
120.0
160.0
200.0
240.0
- 50 - 25
0
25
50
75 100 125 150 175
Q
g
–
Total Gate Charge (nC)
T – Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73474
S-71207-Rev. D, 18-Jun-07
www.vishay.com
3
SUM90P10-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
100
10
1
0.08
0.06
0.04
0.02
0.00
T
J
= 150 C
25 C
125 °C
25 °C
0.0
0.3
0.6
0.9
1.2
1
2
3
4
5
6
7
8
9
10
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
0.7
6000
5000
4000
3000
2000
1000
0
I
D
= 10 mA
0.5
0.3
0.1
- 0.1
- 0.3
- 50 - 25
0
25
50
75 100 125 150 175
0.0001
0.001
0.01
0.10
1
T
J
– Temperature (°C)
Time (sec)
Threshold Voltage
Single Pulse, Junction-to-Case (TC = 25 °C)
400
350
300
250
200
150
100
50
1000
100
10
*Limited by r
DS(on)
10 µs
100 µs
1 ms
10 ms
DC
1
Single pulse
T = 25 °C
c
0
0.1
100
25
50
75
100
125
150
175
0.1
1
10
V
– Drain-to-Source Voltage (V)
DS
T
– Case-Temperature (°C)
C
* V > minimum V at which r is specified
GS
GS
DS(on)
Power Derating (Junction-to-Case)
Safe Operating Area
www.vishay.com
4
Document Number: 73474
S-71207-Rev. D, 18-Jun-07
SUM90P10-19L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120
1000
100
10
90
60
30
0
1
0.1
0
25
50
75
100
125
150
175
0.00001 0.0001
0.001
0.01
0.1
1.0
T
C
– Case Temperature (°C)
t
in
– Time in Avalanche (Sec)
Max Avalanche and Drain Current vs. Case Temperature
Avalanche Current vs. Time
1
0.5
0.2
0.1
0.05
0.02
0.1
Single
0.01
0.0001
1
0.001
0.1
0.01
Square Wave Pulse Duration (Sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73474.
Document Number: 73474
S-71207-Rev. D, 18-Jun-07
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
SUN3043
1.4MHz, Single Cell DC/DC Converter in 5-Lead SOT-23,异步升压：输入0.9V~10V、输出可调最高34V、电流800mA、正负两路升压。
ETC
©2020 ICPDF网 联系我们和版权申明