SUP75P05-08-E3 [VISHAY]
Trans MOSFET P-CH 55V 75A 3-Pin(3+Tab) TO-220AB;
| 型号： | SUP75P05-08-E3 |
| 厂家： | 
VISHAY |
| 描述： | Trans MOSFET P-CH 55V 75A 3-Pin(3+Tab) TO-220AB 局域网 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUP/SUB75P05-08
New Product
Vishay Siliconix
P-Channel 55-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
–55
0.008
–75
TO-220AB
S
TO-263
G
DRAIN connected to TAB
G
D S
G D S
Top View
Top View
D
SUB75P05-08
SUP75P05-08
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–55
DS
GS
V
V
"20
a
T
= 25_C
= 150_C
–75
C
Continuous Drain Current
(T = 175_C)
J
I
D
T
C
–47
–240
–75
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
280
mJ
W
AR
d
T
C
= 25_C (TO-220AB and TO-263)
250
Power Dissipation
P
D
c
T
A
= 125_C (TO-263)
3.7
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
c
PCB Mount (TO-263)
R
thJA
R
thJA
R
thJC
40
62.5
0.6
Junction-to-Ambient
Junction-to-Case
C/W
Free Air (TO-220AB)
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-1
SUP/SUB75P05-08
New Product
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
V
= 0 V, I = –250 mA
–55
–1
(BR)DSS
GS
D
V
V
DS
= V , I = –250 mA
GS D
Gate Threshold Voltage
Gate-Body Leakage
V
–2
–3
GS(th)
V
DS
= 0 V, V = "20 V
GS
I
"100
–1
nA
GSS
V
= –44 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
V
V
= –44 V, V = 0 V, T = 125_C
–50
mA
DSS
DS
GS
J
= –44 V, V = 0 V, T = 175_C
–700
DS
GS
J
a
On-State Drain Current
I
V = –5 V, V = –10 V
DS GS
–120
A
D(on)
V
= –10 V, I = –30 A
D
0.008
0.013
0.014
0.016
GS
V
GS
= –4.5 V, I = –20 A
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= –10 V, I = –30 A, T = 125_C
D
J
V
GS
= –10 V, I = –30 A, T = 175_C
D
J
a
Forward Transconductance
g
fs
V
= –15 V, I = –30 A
75
S
DS
D
Dynamicb
Input Capacitance
C
8500
1220
915
140
30
iss
Output Capacitance
C
oss
V
= 0 V, V = –25 V, f = 1 MHz
pF
nC
GS
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
225
g
c
Gate-Source Charge
Q
V
= –30 V, V = –10 V, I = –75 A
gs
gd
DS GS D
c
Gate-Drain Charge
Q
30
c
Turn-On Delay Time
t
13
20
d(on)
c
Rise Time
t
140
115
175
225
185
300
r
V
= –30 V, R = 0.47 W
L
DD
ns
c
I
D
] –75 A, V
= –10 V, R = 2.5 W
GEN G
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
–75
–240
–1.3
120
s
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= –75 A, V = 0 V
–1.1
60
V
ns
A
GS
Reverse Recovery Time
t
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
I
F
= –75 A, di/dt = 100 A/ms
2.2
3.5
Q
0.176
0.21
mC
rr
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-2
SUP/SUB75P05-08
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
150
100
50
200
V
GS
= 10 thru 7 V
6 V
T
= –55_C
C
25_C
160
120
80
40
0
5 V
125_C
4 V
3 V
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
120
90
60
30
0
0.06
0.05
0.04
0.03
0.02
0.01
0
T
C
= –55_C
25_C
125_C
V
= 4.5 V
GS
V
GS
= 10 V
100
0
20
40
60
80
100
0
20
40
60
80
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
12000
10000
8000
6000
4000
2000
0
20
16
12
8
V
I
= 30 V
= 75 A
DS
D
C
iss
4
C
oss
C
rss
0
0
11
22
33
44
55
0
50
100
Q – Total Gate Charge (nC)
g
150
200
250
300
V
DS
– Drain-to-Source Voltage (V)
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-3
SUP/SUB75P05-08
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
1.6
1.2
0.8
0.4
0
100
V
= 10 V
= 30 A
GS
I
D
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0
1
10
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
70
65
60
55
50
45
40
I
D
= 250 mA
I
AV
(A) @ T = 25_C
J
100
10
1
I
AV
(A) @ T = 150_C
J
0.1
–50 –25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
(Sec)
0.1
1
t
in
T
J
– Junction Temperature (_C)
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-4
SUP/SUB75P05-08
New Product
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
500
100
90
75
60
45
30
15
0
10 ms
Limited
by r
DS(on)
100 ms
1 ms
10
10 ms
T
= 25_C
C
100 ms
dc
Single Pulse
1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
10
1
3
Square Wave Pulse Duration (sec)
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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