SUP90N15-18P-E3 [VISHAY]
N-Channel 150-V (D-S) MOSFET; N沟道150 -V （D -S ）的MOSFET
| 型号： | SUP90N15-18P-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 150-V (D-S) MOSFET |
| 文件： | 总6页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUP90N15-18P
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Qg (Typ)
175 °C Junction Temperature
100 % Rg and UIS Tested
90d
0.018 at VGS = 10 V
RoHS
COMPLIANT
150
64
APPLICATIONS
•
Primary Side Switch
•
Industrial
TO-220AB
D
G
G D
S
S
Top View
Ordering Information: SUP90N15-18P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
150
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
90d
75
TC = 25 °C
TC = 70 °C
Continuous Drain Current (TJ = 175 °C)
ID
A
IDM
IAS
Pulsed Drain Current
Avalanche Current
180
50
Single Avalanche Energya
EAS
L = 0.1 mH
TC = 25 °C
125
mJ
W
375b
3.75
Maximum Power Dissipationa
PD
TA = 25 °Cc
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Symbol
Limit
40
Unit
RthJA
°C/W
RthJC
Junction-to-Case (Drain)
0.4
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69935
S-80181-Rev. A, 04-Feb-08
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1
SUP90N15-18P
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Typ.
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
150
2.5
V
Gate Threshold Voltage
Gate-Body Leakage
4.5
250
1
VDS = 0 V, VGS
=
20 V
nA
VDS = 150 V, VGS = 0 V
DS = 150 V, VGS = 0 V, TJ = 125 °C
DS = 150 V, VGS = 0 V, TJ = 150 °C
VDS ≥ 10 V, VGS = 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
50
µA
250
On-State Drain Currenta
ID(on)
rDS(on)
gfs
120
A
Ω
S
VGS = 10 V, ID = 20 A
0.0145
0.029
55
0.018
0.036
Drain-Source On-State Resistancea
V
GS = 10 V, ID = 20 A, TJ = 125 °C
VDS = 15 V, ID = 20 A
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
4180
235
83
VGS = 0 V, VDS = 75 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
64
100
Qgs
Qgd
Rg
VDS = 75 V, VGS = 10 V, ID = 85 A
f = 1 MHz
23
nC
16
2.1
15
4.2
25
15
40
15
Ω
td(on)
tr
td(off)
tf
10
V
DD = 75 V, RL = 0.88 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω
25
8
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
ISM
Continuous Current
90
180
1.5
200
12
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 30 A, VGS = 0 V
1.0
130
8
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = 50 A, di/dt = 100 A/µs
0.52
1.2
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69935
S-80181-Rev. A, 04-Feb-08
SUP90N15-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
50
40
30
20
10
0
180
V
GS
= 10 thru 7 V
150
120
90
60
30
0
V
= 6 V
GS
T
= 25 °C
C
T
C
= 125 °C
V
GS
= 5 V
T
C
= - 55 °C
6
0
2
4
8
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
100
80
60
40
20
0
0.04
0.03
0.02
0.01
0.00
T
C
= - 55 °C
T
C
= 25 °C
V
GS
= 10 V
T
C
= 125 °C
0
20
40
I
60
80
100
120
0
8
16
24
32
40
- Drain Current (A)
I
- Drain Current (A)
D
D
On-Resistance vs. Drain Current
Transconductance
0.10
0.08
0.06
0.04
0.02
0.00
6000
5000
4000
3000
2000
1000
0
I
= 20 A
D
C
iss
T
= 150 °C
A
C
oss
T
= 25 °C
A
C
rss
0
2
4
6
8
10
0
10
DS
20
30
40
V
- Gate-to-Source Voltage (V)
GS
V
- Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Capacitance
Document Number: 69935
S-80181-Rev. A, 04-Feb-08
www.vishay.com
3
SUP90N15-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
3.0
I
= 20 A
I
= 85 A
D
D
8
2.5
2.0
1.5
1.0
0.5
V
DS
= 75 V
6
V
DS
= 120 V
4
2
0
0
20
40
60
80
- 50 - 25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
0.8
0.2
190
180
170
160
150
140
I
= 1 mA
D
- 0.4
- 1.0
- 1.6
- 2.2
I
= 1 mA
D
I
= 250 µA
D
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
T
J
- Temperature (°C)
T
J
- Temperature (°C)
Threshold Voltage
Drain-Source Breakdown vs. Junction Temperature
1000
100
T
J
= 150 °C
10 µs
Limited
100
10
10
1
by r
DS(on)*
100 µs
T
J
= 25 °C
1 ms
10 ms
100 ms, DC
1
0.1
0.01
0.1
T
C
= 25 °C
Single Pulse
0.001
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1.0
10
- Drain-to-Source Voltage (V)
DS
100
1000
V
V
- Source-to-Drain Voltage (V)
SD
* V > minimum V at which r is specified
DS(on)
GS
GS
Source-Drain Diode Forward Voltage
Safe Operating Area, Junction-to-Case
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Document Number: 69935
S-80181-Rev. A, 04-Feb-08
SUP90N15-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
80
60
40
20
0
500
450
400
350
300
250
200
150
100
50
Package Limited
0
0
25
50
75
100
125
150
175
0
25
50
75
T - Temperature (°C)
J
100
125
150
175
T
C
- Case Temperature (°C)
Current Derating*, Junction-to-Case
Power Derating*, Junction-to-Case
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69935.
Document Number: 69935
S-80181-Rev. A, 04-Feb-08
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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