SUR50N03-16P-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SUR50N03-16P-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总5页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUR50N03-16P
Vishay Siliconix
New Product
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D PWM Optimized
VDS (V)
rDS(on) (W)
ID (A)a
D 100% Rg Tested
APPLICATIONS
0.016 @ V = 10 V
15
12
GS
30
0.024 @ V = 4.5 V
GS
D DC/DC Converters
− High-Side
D Synchronous Rectifiers
D
TO-252
Reverse Lead DPAK
G
Drain Connected to Tab
G
D
S
Top View
Ordering Information:
SUR50N03-16P—E3
SUR50N03-16P-T4—E3 (altrenate tape orientation)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
"20
36
DS
GS
V
V
T
= 25_C
= 25_C
= 100_C
C
a
T
15
Continuous Drain Current
I
A
D
T
A
10.6
40
A
Pulsed Drain Current
I
DM
a
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
I
5
S
I
AS
25
L = 0.1 mH
Single Pulse Avalanche Energy
E
AS
31.25
40.8
mJ
T
= 25_C
= 25_C
C
Maximum Power Dissipation
P
W
D
a
T
6.5
A
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
18
40
23
50
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Maximum Junction-to-Case
3.0
3.7
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72775
S-32696—Rev. A, 19-Jan-04
www.vishay.com
1
SUR50N03-16P
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
30
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
1.0
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 30 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
40
10
A
D(on)
DS
GS
V
= 10 V, I = 15 A
0.0128
0.019
0.016
0.025
0.024
GS
D
b
V
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 10 A
D
GS
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
1150
215
70
iss
V
GS
= 0 V, V = 25 V, f = 1 MHz
DS
Output Capacitance
pF
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
8.5
5
13
g
c
Gate-Source Charge
Q
Q
V
DS
= 15 V, V = 4.5 V, I = 50 A
nC
gs
gd
GS
D
c
Gate-Drain Charge
2.5
5.5
7
Gate Resistance
R
g
2.7
9.40
15
W
c
Turn-On Delay Time
t
d(on)
c
Rise Time
t
20
30
r
V
= 15 V, R = 0.3 W
L
GEN g
DD
ns
c
I
D
^ 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
25
40
d(off)
c
Fall Time
t
f
12
20
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
40
1.5
70
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 20 A, V = 0 V
1.0
25
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
GS
= 10 thru 5 V
50
40
30
20
10
0
4 V
T
= 125_C
C
25_C
3 V
−55_C
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72775
S-32696—Rev. A, 19-Jan-04
www.vishay.com
2
SUR50N03-16P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
60
0.05
0.04
0.03
0.02
0.01
0.00
T
= −55_C
C
50
40
30
20
10
0
25_C
125_C
V
= 4.5 V
GS
V
GS
= 10 V
0
5
10
D
15
20
25
30
0
10
20
30
40
50
60
I
− Drain Current (A)
I
− Drain Current (A)
D
Capacitance
Gate Charge
1500
1200
900
600
300
0
10
8
C
iss
V
D
= 15 V
DS
I
= 50 A
6
4
C
oss
2
C
rss
0
0
5
10
15
20
25
30
0
3
6
9
12
Q − Total Gate Charge (nC)
g
15
18
V
DS
− Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.1
1.8
1.5
1.2
0.9
0.6
100
10
1
V
GS
= 10 V
I
D
= 15 A
T = 150_C
T = 25_C
J
J
−50 −25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
− Junction Temperature (_C)
V
SD
− Source-to-Drain Voltage (V)
J
Document Number: 72775
S-32696—Rev. A, 19-Jan-04
www.vishay.com
3
SUR50N03-16P
Vishay Siliconix
New Product
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
100
20
15
10
5
10 ms
Limited
by r
100 ms
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
T
= 25_C
dc, 100 s
A
Single Pulse
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
A
− Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
100
Document Number: 72775
S-32696—Rev. A, 19-Jan-04
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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