SUU50N04-13P-E3 [VISHAY]
Power Field-Effect Transistor, 10.9A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, IPAK-3;
| 型号： | SUU50N04-13P-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 10.9A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, IPAK-3 |
| 文件： | 总9页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUU50N04-13P
Vishay Siliconix
N-Channel 40-V (D-S), 175 °C MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
20
•
RoHS
0.013 at VGS = 10 V
0.0155 at VGS = 4.5 V
COMPLIANT
40
23.7 nC
20
APPLICATIONS
•
LCD TV Inverter
•
Secondary Synchronous Rectification
TO-251
D
Drain Connected to
Drain-Tab
G
G
D
S
Top View
Ordering Information: SUU50N04-13P-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
40
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
16
20a
TC = 25 °C
20a
T
C = 100 °C
Continuous Drain Current (TJ = 150 °C)
ID
10.9b
7.5b
50
TA = 25 °C
TA = 100 °C
A
Pulsed Drain Current
IDM
IS
20a
2.5b
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
IAS
20
L = 0.1 mH
EAS
mJ
W
20
TC = 25 °C
35.7
17.8
3.1b
1.5b
- 55 to 175
TC = 100 °C
TA = 25 °C
TA = 100 °C
Maximum Power Dissipation
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Symbol
RthJA
Typical
Maximum
Unit
Steady State
Steady State
40
48
°C/W
RthJC
Maximum Junction-to-Case
3.4
4.2
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
Document Number: 68814
S-81956-Rev. B, 25-Aug-08
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1
SUU50N04-13P
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
40
V
35
mV/°C
- 5.5
VDS = VGS, ID = 250 µA
0.8
30
2.2
100
1
V
IGSS
VDS = 0 V, VGS
=
16 V
nA
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 100 °C
VDS ≥ 5 V, VGS = 10 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
RDS(on)
gfs
µA
A
20
VGS = 10 V, ID = 15 A
0.0103
0.012
57
0.013
Drain-Source On-State Resistancea
Ω
S
VGS = 4.5 V, ID = 10 A
0.0155
Forward Transconductancea
Dynamicb
VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Coss
Crss
2485
283
160
52.3
23.7
5
Output Capacitance
Reverse Transfer Capacitance
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 30 A
pF
80
36
Total Gate Charge
Qg
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Qgs
Qgd
Rg
V
DS = 20 V, VGS = 4.5 V, ID = 30 A
f = 1 MHz
7.5
0.8
16
1.3
25
180
70
66
12
26
42
16
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
117
46
VDD = 20 V, RL = 0.66 Ω
ID ≅ 30 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
44
ns
Turn-On Delay Time
Rise Time
6
17
VDD = 20 V, RL = 0.66 Ω
ID ≅ 30 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
27
8
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
IS = 10 A
20
50
1.2
41
41
A
0.81
27
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes:
ns
nC
Qrr
ta
26
IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C
16
ns
tb
11
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 68814
S-81956-Rev. B, 25-Aug-08
SUU50N04-13P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
2.0
1.6
1.2
0.8
0.4
0.0
V
GS
= 10 thru 4 V
64
48
32
16
0
3 V
T
C
= 125 °C
25 °C
1
- 55 °C
0
1
2
3
4
5
0
2
3
4
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.017
0.015
0.013
0.011
0.009
0.007
120
100
80
60
40
20
0
T
= - 55 °C
C
V
GS
= 4.5 V
25 °C
V
GS
= 10 V
125 °C
0
16
32
48
64
80
0
6
12
18
24
30
I
- Drain Current (A)
I
- Drain Current (A)
D
D
On-Resistance vs. Drain Current
Transconductance
0.10
0.08
0.06
0.04
0.02
0.00
3500
2800
2100
1400
700
C
iss
125 °C
25 °C
C
oss
C
rss
0
0
1
2
3
4
5
6
7
8
9
10
0
8
16
24
32
40
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Capacitance
On-Resistance vs. Gate-to-Source Voltage
Document Number: 68814
S-81956-Rev. B, 25-Aug-08
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3
SUU50N04-13P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.1
1.8
1.5
1.2
0.9
0.6
I
D
= 30 A
I
D
= 15 A
8
6
4
2
0
V
DS
= 20 V
V
GS
= 4.5 V
V
DS
= 10 V
V
GS
= 10 V
V
= 30 V
DS
0
12
24
36
48
60
- 50 - 25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
Q
g
- Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.5
0.2
100
10
I
D
= 250 µA
T
J
= 150 °C
I
D
= 5 mA
1
- 0.1
- 0.4
- 0.7
- 1.0
T
J
= 25 °C
0.1
0.01
0.001
- 50 - 25
0
25
50
75 100 125 150 175
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
T
J
- Temperature (°C)
Threshold Voltage
Source-Drain Diode Forward Voltage
200
200
160
120
80
40
0
160
120
80
40
0
0.001
0.01
0.1
1
100
0.001
0.01
0.1
1
10
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Time (s)
Single Pulse Power, Junction-to-Case
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Document Number: 68814
S-81956-Rev. B, 25-Aug-08
SUU50N04-13P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
10
Limited by R
DS(on)*
Limited by R
DS(on)*
100 µs
10
1
1 ms
1 ms
10 ms
100 ms
1 s, DC
10 ms
100 ms
1
1 s
10 s
T
= 25
C
T
= 25 C
A
C
Single Pulse
Single Pulse
0.1
0.1
0.01
DC
BVDSS
Limited
BVDSS
Limited
0.01
0.01
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V at which R
is specified
DS(on)
* V
GS
minimum V at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
Safe Operating Area, Junction-to-Case
12
10
7
45
36
27
18
9
5
Package Limited
2
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating**, Junction-to-Ambient
Current Derating**, Junction-to-Case
** The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68814
S-81956-Rev. B, 25-Aug-08
www.vishay.com
5
SUU50N04-13P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0
55
44
33
22
11
0
3.2
2.4
1.6
0.8
0.0
0
25
50
75
100
125
150
175
0
25
50
75
T - Case Temperature (°C)
C
100
125
150
175
T
- Ambient Temperature (°C)
A
Power Derating*, Junction-to-Ambient
Power Derating*, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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6
Document Number: 68814
S-81956-Rev. B, 25-Aug-08
SUU50N04-13P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
t
1
0.05
0.02
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 48 C/W
thJA
(t)
3. T – T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68814.
Document Number: 68814
S-81956-Rev. B, 25-Aug-08
www.vishay.com
7
Package Information
Vishay Siliconix
TOĆ251AA (DPAK)
E
A
L2
b2
c1
MILLIMETERS
INCHES
Min
Dim
A
A1
b
b1
b2
c
c1
D
Min
2.21
0.89
0.71
0.76
5.23
0.46
0.46
5.97
6.48
Max
2.38
1.14
0.89
1.14
5.43
0.58
0.58
6.22
6.73
Max
0.094
0.045
0.035
0.045
0.214
0.023
0.023
0.245
0.265
0.087
0.035
0.028
0.030
0.206
0.018
0.018
0.235
0.255
D
L3
L1
b1
E
e
L
2.28 BSC
0.090 BSC
8.89
1.91
0.89
1.15
9.53
2.28
1.27
1.52
0.350
0.075
0.035
0.045
0.375
0.090
0.050
0.060
L
L1
L2
L3
b
e
c
ECN: S-03946—Rev. E, 09-Jul-01
DWG: 5346
A1
Note: Dimension L3 is for reference only.
Document Number: 71666
28-Jun-01
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1
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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