SiHL640S [VISHAY]
Repetitive avalanche rated;
| 型号： | SiHL640S |
| 厂家： | 
VISHAY |
| 描述： | Repetitive avalanche rated |
| 文件： | 总9页 (文件大小：994K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRL640S, SiHL640S
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Surface mount
VDS (V)
DS(on) ()
Qg max. (nC)
200
• Available in tape and reel
• Dynamic dV/dt rating
R
VGS = 5 V
0.18
Available
Available
• Repetitive avalanche rated
• Logic-level gate drive
66
9.0
• RDS(on) specified at VGS = 4 V and 5 V
• Fast switching
Q
gs (nC)
gd (nC)
Q
38
• Material categorization: for definitions of
Configuration
Single
compliance please see www.vishay.com/doc?99912
Note
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
D
*
D2PAK (TO-263)
G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D
G
S
S
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
N-Channel MOSFET
ORDERING INFORMATION
Package
D2PAK (TO-263)
SiHL640S-GE3
IRL640SPbF
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHL640STRL-GE3 a
IRL640STRLPbF a
SiHL640STL-E3 a
SiHL640STRR-GE3 a
IRL640STRRPbF a
SiHL640STR-E3 a
Lead (Pb)-free
SiHL640S-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
LIMIT
200
10
UNIT
VDS
V
VGS
T
C = 25 °C
17
11
Continuous Drain Current
VGS at 5.0 V
ID
TC = 100 °C
A
Pulsed Drain Current a
IDM
68
Linear Derating Factor
1.0
W/°C
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
0.025
580
EAS
IAR
mJ
A
10
EAR
13
mJ
T
C = 25 °C
125
PD
W
V/ns
°C
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/dt c
TA = 25 °C
3.1
dV/dt
5.0
Operating Junction and Storage Temperature Range
Soldering Temperature d
TJ, Tstg
-55 to +150
300
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 3.0 mH, Rg = 25 , IAS = 17 A (see fig. 12).
c. ISD 17 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
S16-0763-Rev. D, 02-May-16
Document Number: 91306
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL640S, SiHL640S
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
RthJA
RthJC
-
-
62
Maximum Junction-to-Ambient
-
-
-
-
40
°C/W
(PCB mount) a
Maximum Junction-to-Case (Drain)
1.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS
VDS/TJ
VGS(th)
IGSS
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
200
-
-
V
V/°C
V
VDS Temperature Coefficient
-
1.0
-
0.27
-
Gate-Source Threshold Voltage
Gate-Source Leakage
-
-
-
-
-
-
-
2.0
100
25
VGS
=
10 V
nA
VDS = 200 V, VGS = 0 V
-
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
IDSS
μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C
-
250
0.18
0.27
-
V
GS = 5.0 V
ID = 10 A b
ID = 8.5 A b
-
RDS(on)
gfs
VGS = 4.0 V
-
Forward Transconductance
Dynamic
VDS = 50 V, ID = 10 A b
16
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
1800
400
120
-
-
-
VGS = 0 V,
DS = 25 V,
f = 1.0 MHz, see fig. 5
V
pF
-
66
9.0
38
-
ID = 17 A, VDS = 160 V,
see fig. 6 and 13 b
Qgs
Qgd
td(on)
tr
V
GS = 5.0 V
-
nC
-
8.0
83
44
52
-
VDD = 100 V, ID = 17 A,
ns
Rg = 4.6 , RD = 5.7 , see fig. 10 b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
-
4.5
-
6 mm (0.25") from
package and center of
die contact
nH
G
LS
Rg
-
7.5
-
-
S
Gate Input Resistance
f = 1 MHz, open drain
0.3
1.2
Drain-Source Body Diode Characteristics
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
IS
-
-
-
-
17
68
A
G
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 17 A, VGS = 0 V b
-
-
-
-
2.0
470
4.8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
310
3.2
ns
μC
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S16-0763-Rev. D, 02-May-16
Document Number: 91306
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL640S, SiHL640S
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-0763-Rev. D, 02-May-16
Document Number: 91306
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL640S, SiHL640S
www.vishay.com
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
S16-0763-Rev. D, 02-May-16
Document Number: 91306
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL640S, SiHL640S
www.vishay.com
Vishay Siliconix
RD
VDS
VGS
D.U.T.
Rg
+
-
V
DD
5 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0763-Rev. D, 02-May-16
Document Number: 91306
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL640S, SiHL640S
www.vishay.com
Vishay Siliconix
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
Rg
D.U.T.
+
-
VDD
VDS
IAS
5 V
0.01 W
tp
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
5 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
-
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
S16-0763-Rev. D, 02-May-16
Document Number: 91306
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL640S, SiHL640S
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
VGS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91306.
S16-0763-Rev. D, 02-May-16
Document Number: 91306
7
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
B
(Datum A)
3
4
A
A
E
c2
H
L1
4
Gauge
plane
0° to 8°
4
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale 8:1
A
2 x b2
2 x b
c
E
M
M
B
0.010
A
M
0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b1, b3
5
c1
(b, b2)
Lead tip
4
E1
Section B - B and C - C
Scale: none
View A - A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
-
10.67
-
0.270
0.380
0.245
-
0.420
-
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
-
-
-
-
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
Document Number: 91000
1
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SIHL640STRR-GE3
TRANSISTOR 17 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SMD-220, 3 PIN, FET General Purpose Power
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