T90RIA100PBF [VISHAY]
Silicon Controlled Rectifier, 141A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, ROHS COMPLIANT, POWER MODULE-3;
| 型号： | T90RIA100PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 141A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, ROHS COMPLIANT, POWER MODULE-3 局域网 栅 栅极 |
| 文件： | 总12页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27105 rev. C 10/06
T..RIA SERIES
Power Modules
MEDIUM POWER PHASE CONTROL THYRISTORS
Features
Electrically isolated base plate
Types up to 1200 V
RRM
3500 V
isolating voltage
RMS
50 A
70 A
90 A
Simplified mechanical designs,
rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
RoHS Compliant
Description
These series of T-modules are inteded for general
purpose applications such as battery chargers,
welders and plating equipment, regulated power
supplies and temperature and speed control circuits.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built.
Major Ratings and Characteristics
Parameters T50RIA T70RIA T90RIA Units
I
50
70
70
70
90
oC
A
T(AV)
@T 70
C
I
80
110
1660
141
1780
A
A
T(RMS)
I
@50Hz
1310
1370
8550
7800
85500
TSM
@60Hz
@50Hz
@60Hz
1740
1870
A
I2t
13860
15900
14500
159100
A2s
A2s
12650
2
2
I √t
138500
100 to 1200
-40 to125
A √s
V
T
/V
V
DRM RRM
oC
J
Document Number: 93756
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1
T..RIA Series
Bulletin I27105 rev. C 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Typenumber
Voltage VDRM/VRRM,maximumrepetitive VRSM,maximumnon-repetitive
IDRM/IRRM max.
@25°C
Code
V
peakreversevoltage
peakreversevoltage
V
µA
150
300
500
700
900
1100
1300
10
100
200
400
600
800
1000
1200
20
T50RIA
T70RIA
T90RIA
40
60
100
80
100
120
On-stateConduction
Parameter
T50RIA
50
T70RIA
70
T90RIA
90
Units Conditions
IT(AV) Max. average on-state current
A
180° conduction, half sine wave
@ Case temperature
70
80
70
70
°C
A
IT(RMS) Max. RMS on-state current
110
141
ITSM Maximum peak, one-cycle
on-state, non-repetitive
surge current
1310
1370
1660
1740
1780
1870
A
t = 10ms No voltage
t = 8.3ms reapplied
1100
1150
8550
7800
6050
1400
1460
1500
1570
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sine half wave,
I2t
Maximum I2t for fusing
13860
12650
9800
15900
14500
11250
A2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
t = 10ms 100% VRRM
5520
85500
0.97
8950
138500
0.77
10270
159100
0.78
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
A2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
V
(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold
voltage
1.13
4.1
0.88
3.6
0.88
2.9
(I > π x IT(AV)), @ TJ max.
r
Low level value on-state
slope resistance
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
(I > π x IT(AV)), @ TJ max.
t1
r
High level value on-state
slope resistance
3.3
3.2
2.6
t2
VTM
Maximum on-state voltage drop
1.60
1.55
1.55
V
ITM = π x IT(AV), TJ = 25°C., tp = 400µs square
2
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS)
)
IH
IL
Maximum holding current
Maximum latching current
200
400
mA Anode supply = 6V initial IT = 30A, TJ = 25°C
mA Anode supply = 6V resistive load = 10Ω
gate pulse: 10V, 100µs, TJ = 25°C
Switching
Parameter
T50RIA
T70RIA
0.9
T90RIA
Units Conditions
tgd
Typical turn-on time
µs
T = 25oC Vd = 50% VDRM, ITM = 50 A
J
Ig = 500mA, tr <= 0.5, tp >= 6µs
trr
tq
Typical reverse recovery time
Typical turn-off time
3.0
µs
µs
TJ =125°C, ITM = 50A tp = 300µs di/dt =10A/µs
TJ = TJ max., ITM = 50A, tp = 300µs,
110
-di/dt = 15A/µs, Vr = 100V; linear to 80%VDRM
Document Number: 93756
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2
T..RIA Series
Bulletin I27105 rev. C 10/06
Blocking
Parameter
T50RIA
T70RIA
15
T90RIA
Units Conditions
mA TJ = TJ = TJ max.
IRRM Maximum peak reverse and
IDRM off-state leakage current
VINS RMS isolation voltage
3500
500
V
50Hz, circuit to base, all terminals shorted,
TJ = 25°C, t = 1s
V/µs TJ = TJ max., linear to 80% rated VDRM (1)
dv/dt Critical rate of rise of off-state
voltage
(1) Available with dv/dt = 1000V/μs, to complete code add S90 i.e. T90RIA80S90
Triggering
Parameter
T50RIA
T70RIA
T90RIA
Units Conditions
PGM Max. peak gate power
10
2.5
2.5
10
12
3.0
3.0
10
12
3.0
3.0
10
W
W
A
tp ≤ 5ms, TJ = TJ max.
PG(AV) Max. average gate power
f=50Hz, TJ =TJ max.
IGM
Max. peak gate current
tp ≤ 5ms, TJ = TJ max.
-VGT Max. peak negative
gate voltage
V
VGT
Max. required DC gate
voltage to trigger
4.0
2.5
1.5
250
100
50
4.0
2.5
1.5
270
120
60
4.0
2.5
1.5
270
120
60
V
TJ = - 40°C Anode supply = 6V, resistive
TJ = 25°C
load; Ra = 1Ω
TJ = TJ max.
IGT
Max. required DC gate
current to trigger
TJ = - 40°C Anode supply = 6V, resistive
mA TJ = 25°C
TJ = TJ max.
load; Ra = 1Ω
VGD Max. gate voltage
that will not trigger
0.2
0.2
0.2
V
@ TJ = TJ max., rated VDRM applied
IGD
Max. gate current
5.0
6.0
6.0
mA
that will not trigger
di/dt Max. rate of rise of
turned-on current
200
180
A/µs VD=0.67ratedVDRM,ITM =2xrateddi/dt
Ig = 400mA for T50RIA and Ig = 500mA for
160
T70RIA&T90RIA;tr<0.5µs, tp>=6µs
For repetitive value use 40% non-repetitive
Per JEDEC std. RS397,5.2.2.6
150
ThermalandMechanicalSpecifications
Parameter
T50RIA
T70RIA
T90RIA
0.38
Units Conditions
TJ
Max. junction operating
temperature range
Max. storage temperature
range
-40 to 125
°C
Tstg
-40 to 150
0.50
°C
RthJC Max. thermal resistance,
junction to case
0.65
K/W DC operation, per junction
RthCS Max. thermal resistance,
case to heatsink
0.2
K/W Mounting surface smooth, flat andgreased
T
Mounting to heatsink
1.3 ± 10%
3 ± 10%
54
Nm M3.5 mounting screws (2)
non lubricated
threads
torque ± 10%
terminals
M5 screw terminals
wt
Approximate weight
Case style
g
See outline table
T type
D-56
(2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the
spread of the compound.
Document Number: 93756
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3
T..RIA Series
Bulletin I27105 rev. C 10/06
ΔRConduction(perJunction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction @ TJ max.
Rectangularconduction@TJ max.
Devices
Units
K/W
180o
0.08
0.07
0.05
120o
0.10
0.08
0.06
90o
60o
30o
180o
0.06
0.05
0.04
120o
0.10
0.08
0.06
90o
60o
30o
T50RIA
T70RIA
T90RIA
0.13
0.10
0.08
0.19
0.14
0.12
0.31
0.24
0.20
0.14
0.11
0.09
0.20
0.15
0.12
0.32
0.24
0.20
OrderingInformationTable
Circuit configuration **
Device Code
T
50 RIA 120
G
2
1
3
4
1
2
3
4
-
-
-
-
Moduletype
Currentrating
Circuitconfiguration**
Voltage code : code x 10 = V
RRM
OutlineTable
+
-
All dimensions in millimeters (inches)
Document Number: 93756
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4
T..RIA Series
Bulletin I27105 rev. C 10/06
130
120
110
100
90
130
120
110
100
90
T50RIA.. Series
R
T50RIA.. Series
(DC) = 0.65 K/W
(DC) = 0.65 K/W
R
thJC
thJC
Conduction Angle
Conduction Period
80
80
30°
20
70
70
90°
60°
90°
60°
120°
60
120°
40
60
30°
180°
DC
180°
50
50
50
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
0
10
30
60
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
80
R
0
180°
.
7
K
70
60
50
40
30
20
10
0
/
W
120°
90°
60°
30°
=
0
1
.
K
1
/
W
K
/
W
-
D
1
.
5
e
K
l
t
/
W
a
R
RMS Limit
2
K
/
W
Conduction Angle
T50RIA.. Series
T = 125°C
J
0
10
20
30
40
500
20
40
60
80
100 120
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-state Power Loss Characteristics
110
100
90
80
70
60
50
40
30
20
10
0
0
DC
.
3
K
180°
120°
90°
60°
30°
/
W
0
.
5
K
/
W
RMS Limit
3
K
Conduction Period
T50RIA.. Series
T = 125°C
/
W
J
0
10 20 30 40 50 60 70 800
Average On-state Current (A)
20
40
60
80
100 120
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-state Power Loss Characteristics
Document Number: 93756
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5
T..RIA Series
Bulletin I27105 rev. C 10/06
1200
1300
1200
1100
1000
900
At Any Rated Load Condition And With
Rated V
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Applied Following Surge.
Initial T = 125°C
RRM
1100
1000
900
800
700
600
500
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
800
700
T50RIA.. Series
T50RIA.. Series
600
500
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
100
10
T = 25°C
J
T = 125°C
J
T50RIA.. Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
a) Recommended load line for
rated di/dt : 20V, 30ohms;
tr=0.5µs, tp>=6µs
b) Recommended load line for
<=30%rated di/dt : 20V, 65ohms
tr=1µs, tp>=6µs
(a)
(b)
(1)
(4)
(2)
(3)
VGD
IGD
T50RIA.. Series Frequency Limited by PG(AV)
10 100
0.1
0.001
0.01
0.1
1
1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Document Number: 93756
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6
T..RIA Series
Bulletin I27105 rev. C 10/06
130
120
110
100
90
130
120
110
100
90
T70RIA.. Series
R
T70RIA.. Series
(DC) = 0.50 K/W
(DC) = 0.50 K/W
R
thJC
thJC
Conduction Angle
Conduction Period
80
80
60°
30°
70
70
60°
30°
90°
90°
120°
120°
60
60
180°
180°
80
DC
50
50
0
20
40
60
100 120
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
Average On-state Current (A)
Fig. 12 - Current Ratings Characteristics
Fig. 13 - Current Ratings Characteristics
100
180°
120°
90
t
h
S
A
90°
60°
80
30°
70
60
50
40
30
20
10
0
RMS Limit
Conduction Angle
T70RIA.. Series
T = 125°C
J
0
10 20 30 40 50 60 700
Average On-state Current (A)
20
40
60
80
100 120
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-state Power Loss Characteristics
140
120
100
80
DC
180°
120°
90°
60°
30°
R
0
.
3
=
K
0
.
/
W
1
K
0
/
.
5
W
K
-
/
W
D
e
l
t
a
R
RMS Limit
60
1
.
5
K
/
W
2
Conduction Period
T70RIA.. Series
T = 125°C
K
/
W
40
20
J
0
0
20
40
60
80
100 120
20
40
60
80
100 120
Maximum Allowable Ambient Temperature (°C)
Average On-state Current (A)
Fig. 15 - On-state Power Loss Characteristics
Document Number: 93756
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7
T..RIA Series
Bulletin I27105 rev. C 10/06
1500
1700
1600
1500
1400
1300
1200
1100
1000
900
At Any Rated Load Condition And With
Rated V
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Applied Following Surge.
Initial T = 125°C
RRM
1400
1300
1200
1100
1000
900
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
800
T70RIA.. Series
T70RIA.. Series
800
700
700
600
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 16 - Maximum Non-Repetitive Surge
Current
Fig. 17 - Maximum Non-Repetitive Surge Current
1000
100
10
T = 25°C
J
T = 125°C
J
T70RIA.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300µs
a) Recommended load line for
rated di/dt : 20V, 20ohms;
tr=0.5µs, tp>=6µs
b) Recommended load line for
<=30%rated di/dt : 15V, 40ohms
tr=1µs, tp>=6µs
(a)
(b)
(1)
(2)
(3)
(4)
VGD
T70RIA.., T90RIA.. Series Frequency Limited by PG(AV)
0.1 10 100 1000
IGD
0.01
0.1
0.001
1
Instantaneous Gate Current (A)
Fig. 19 - Gate Characteristics
Document Number: 93756
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8
T..RIA Series
Bulletin I27105 rev. C 10/06
130
120
110
100
90
130
120
110
100
90
T90RIA.. Series
(DC) = 0.38 K/W
T90RIA.. Series
R
R
(DC) = 0.38 K/W
thJC
thJC
Conduction Angle
Conduction Period
80
80
30°
70
70
90°
60°
60°
90°
120°
120°
60
60
180°
100
30°
180°
DC
50
50
0
20 40 60 80 100 120 140 160
Average On-state Current (A)
0
20
40
60
80
Average On-state Current (A)
Fig. 23 - Current Ratings Characteristics
Fig. 24 - Current Ratings Characteristics
140
R
180°
120°
0
.
3
120
90°
60°
100
30°
K
=
/
W
0
.
0
.
1
5
K
K
/
W
/
W
-
0
.
7
D
K
e
/
W
l
t
a
RMS Limit
80
R
60
Conduction Angle
40
20
0
3
T90RIA Series
T = 125°C
K
/
W
J
0
10 20 30 40 50 60 70 80 90
20
40
60
80
100 120
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 29 - On-state Power Loss Characteristics
180
160
140
120
100
80
DC
180°
120°
90°
60°
30°
RMS Limit
1
.
5
K
/
60
W
Conduction Period
T90RIA.. Series
T = 125°C
40
20
J
0
0
20 40 60 80 100 120 140 160 20
40
60
80
100 120
Average On-state Current (A)
MaximumAllowable Ambient Temperature (°C)
Fig. 29 - On-state Power Loss Characteristics
Document Number: 93756
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9
T..RIA Series
Bulletin I27105 rev. C 10/06
1600
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
Initial T = 125°C
RRM
1500
1400
1300
1200
1100
1000
900
J
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
T90RIA.. Series
T90RIA.. Series
800
800
700
700
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 27 - Maximum Non-Repetitive Surge Current
Fig. 28 - Maximum Non-Repetitive Surge Current
1000
100
10
T = 25°C
J
T = 125°C
J
T90RIA.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 21 - On-state Voltage Drop Characteristics
1
Steady State Value
R
R
R
= 0.65 K/W
thJC
thJC
thJC
= 0.50 K/W
= 0.38 K/W
T50RIA.. Series
T70RIA.. Series
(DC Operation)
0.1
T90RIA.. Series
0.01
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 34 - Thermal Impedance Z thJC Characteristics
Document Number: 93756
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10
T..RIA Series
Bulletin I27105 rev. C 10/06
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
10/06
Document Number: 93756
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11
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
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1
相关型号：
T90RIA100S90
Silicon Controlled Rectifier, 141A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, MODULE-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
INFINEON
T90RIA100S90PBF
Silicon Controlled Rectifier, 141A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, MODULE-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
T90RIA10PBF
Silicon Controlled Rectifier, 141A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, POWER MODULE-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
T90RIA10PBF
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
T90RIA10S90
Silicon Controlled Rectifier, 141A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, MODULE-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
T90RIA120
MEDIUM POWER PHASE CONTROL THYRISTORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
T90RIA120
Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 AWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
T90RIA120PBF
Silicon Controlled Rectifier, 141A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, POWER MODULE-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
T90RIA120PBF
Silicon Controlled Rectifier, 141A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, POWER MODULE-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
T90RIA120S90
Silicon Controlled Rectifier, 141A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
T90RIA20
MEDIUM POWER PHASE CONTROL THYRISTORSWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
T90RIA20
Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 AWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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