TCET1202G1 [VISHAY]
Optocoupler with Phototransistor Output; 光电耦合器与光电晶体管输出
| 型号： | TCET1202G1 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler with Phototransistor Output |
| 文件： | 总13页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TCET120.(G) up to TCET2200
Vishay Semiconductors
Optocoupler with Phototransistor Output
Description
The TCET120./ TCET2200 consists of
a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4-lead up to 8-lead plastic
dual inline package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
15123
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
For appl. class I – IV at mains voltage ≤ 300 V
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
Emitter Coll.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
Anode Cath.
4 PIN
VDE 0884
8 PIN
Optocoupler for electrical safety requirements
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V
)
RMS
VDE 0804
Telecommunication
processing
apparatus
and
data
C
IEC 65
Safety for mains-operated electronic and related
household apparatus
Document Number 83501
Rev. A2, 08–Feb–01
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1 (12)
TCET120.(G) up to TCET2200
Vishay Semiconductors
Order Instruction
Ordering Code
TCET1200/ TCET1200G
TCET1201/ TCET1201G
TCET1202/ TCET1202G
TCET1203/ TCET1203G
TCET1204/ TCET1204G
CTR Ranking
50 to 600%
40 to 80%
63 to 125%
100 to 200%
160 to 320%
50 to 600%
Remarks
1)
1)
1)
1)
1)
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
4 Pin = Single channel
8 Pin = Dual channel
TCET2200
1)
G = Leadform 10.16 mm; G is not marked on the body
Features
Approvals (are applied):
Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI ≥ 175
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
Thickness through insulation ≥ 0.75 mm
Internal creepage distance > 4 mm
FIMKO (SETI): EN 60950,
Certificate number 202117
General features:
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 – Double Protection
CTR offered in 5 groups
CSA (C-UL) 1577 recognized
file number E- 76222 - Double Protection
Isolation materials according to UL94-VO
Pollution degree 2
(DIN/VDE 0110 / resp. IEC 664)
VDE 0884, Certificate number 115667
Climatic classification 55/100/21 (IEC 68 part 1)
VDE 0884 related features:
Special construction:
Rated impulse voltage (transient overvoltage)
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
V
IOTM
= 8 kV peak
Isolation test voltage
Low temperature coefficient of CTR
(partial discharge test voltage) V = 1.6 kV
pd
G = Leadform 10.16 mm;
Rated isolation voltage (RMS includes DC)
provides creepage distance > 8 mm,
for TCET2200 optional; suffix letter ‘G’ is not
marked on the optocoupler
V
IOWM
= 600 V
(848 V peak)
RMS
Rated recurring peak voltage (repetitive)
= 600 V
V
IORM
Coupling System U
RMS
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2 (12)
Document Number 83501
Rev. A2, 08–Feb–01
TCET120.(G) up to TCET2200
Vishay Semiconductors
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Test Conditions
Symbol
Value
6
60
1.5
100
125
Unit
V
mA
A
mW
C
V
R
I
F
t ≤ 10 s
T
amb
I
p
FSM
≤ 25 C
P
V
Junction temperature
T
j
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Test Conditions
Symbol
Value
70
7
Unit
V
V
mA
mA
mW
C
V
V
CEO
ECO
I
C
50
t /T = 0.5, t ≤ 10 ms
I
100
150
125
p
p
CM
T
amb
≤ 25 C
P
V
T
j
Junction temperature
Coupler
Parameter
Isolation test voltage (RMS)
Total power dissipation
Operating ambient temperature
range
Test Conditions
≤ 25 C
Symbol
Value
5
250
Unit
kV
mW
C
V
IO
P
tot
T
amb
T
amb
–40 to +100
Storage temperature range
Soldering temperature
T
T
sd
–55 to +125
260
C
C
stg
2 mm from case t ≤ 10 s
Document Number 83501
Rev. A2, 08–Feb–01
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3 (12)
TCET120.(G) up to TCET2200
Vishay Semiconductors
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
I = ± 50 mA
V = 0 V, f = 1 MHz
R
Symbol
Min.
Typ.
1.25
50
Max.
1.6
Unit
V
pF
V
F
F
C
j
Output (Detector)
Parameter
Collector emitter voltage I = 1 mA
Emitter collector voltage
Collector emitter cut-off
current
Test Conditions
Symbol
Min.
70
7
Typ.
10
Max.
100
Unit
V
V
V
V
C
CEO
ECO
CEO
I = 100 A
E
V
CE
= 20 V, I = 0, E = 0
I
nA
f
Coupler
Parameter
Collector emitter
saturation voltage
Test Conditions
Symbol
V
CEsat
Min.
Typ.
Max.
0.3
Unit
V
I = 10 mA, I = 1 mA
F
C
Cut-off frequency
V
= 5 V, I = 10 mA,
f
c
110
0.3
kHz
pF
CE
F
R = 100
f = 1 MHz
L
Coupling capacitance
C
k
Current Transfer Ratio (CTR)
Parameter
I /I
C F
Test Conditions
= 5 V, I = 5 mA
Type
TCET1200(G)/
TCET2200
TCET1201(G)
TCET1202(G)
TCET1203(G)
TCET1204(G)
Symbol
CTR
Min.
0.50
Typ.
Max.
6.0
Unit
V
CE
V
CE
F
= 5 V, I = 10 mA
CTR
CTR
CTR
CTR
0.40
0.63
1.0
0.8
1.25
2.0
F
1.6
3.2
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4 (12)
Document Number 83501
Rev. A2, 08–Feb–01
TCET120.(G) up to TCET2200
Vishay Semiconductors
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Forward current
Test Conditions
Symbol
Value
130
Unit
mA
I
si
Output (Detector)
Parameters
Power dissipation
Test Conditions
≤ 25 C
Symbol
Value
265
Unit
mW
T
amb
P
si
Coupler
Parameters
Rated impulse voltage
Safety temperature
Test Conditions
Symbol
V
IOTM
Value
8
150
Unit
kV
C
T
si
Insulation Rated Parameters (according to VDE 0884)
Parameter
Partial discharge test voltage –
Routine test
Test Conditions
100%, t = 1 s
Symbol
V
pd
Min.
1.6
Typ.
Max.
Unit
kV
test
Partial discharge test voltage –
Lot test (sample test)
t
= 60 s, t
= 10 s,
V
IOTM
8
1.3
kV
kV
Tr
test
(see figure 2)
V
pd
12
Insulation resistance
V
V
= 500 V
= 500 V,
R
R
10
IO
IO
11
10
IO
IO
T
V
= 100 C
= 500 V,
amb
9
R
IO
10
IO
T
= 150 C
amb
(construction test only)
V
IOTM
300
t , t = 1 to 10 s
1
2
t , t = 1 s
3
4
Phototransistor
Psi ( mW )
250
200
150
100
50
t
= 10 s
= 12 s
test
t
stres
V
Pd
V
V
IOWM
IORM
IR-Diode
Isi ( mA )
0
t
3
t
t
test 4
0
150
0
25
50
75
100
125
t
1
t
Tr
= 60 s
t
2
t
stres
13930
94 9182
T – Safety Temperature ( °C )
si
t
Figure 1. Derating diagram
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
Document Number 83501
Rev. A2, 08–Feb–01
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5 (12)
TCET120.(G) up to TCET2200
Vishay Semiconductors
Switching Characteristics
Parameter
Delay time
Rise time
Turn-on time
Storage time
Fall time
Turn-off time
Turn-on time
Turn-off time
Test Conditions
V = 5 V, I = 2 mA, R = 100 (see figure 3)
Symbol
Typ.
3.0
3.0
6.0
0.3
4.7
5.0
9.0
10.0
Unit
s
s
s
s
s
s
s
s
t
d
S
C
L
t
r
t
on
t
s
t
f
t
t
t
off
on
off
V = 5 V, I = 10 mA, R = 1 k (see figure 4)
S
F
L
+ 5 V
96 11698
I
F
I
F
I
F
0
adjusted through
input amplitude
I
C
= 2 mA;
0
R
= 50
G
t
t
p
t
p
= 0.01
T
I
C
t = 50
s
p
Channel I
Channel II
100%
90%
Oscilloscope
R = 1 M
L
C = 20 pF
L
50
100
95 10804
10%
0
Figure 3. Test circuit, non-saturated operation
t
t
r
t
s
t
f
t
d
t
on
t
off
+ 5 V
I
F
I = 10 mA
F
0
t
t
t
t
pulse duration
delay time
rise time
t
t
t
storage time
fall time
turn-off time
p
s
I
C
d
f
R
t
= 50
(= t + t )
G
r
off
s
f
(= t + t )
turn-on time
on
d
r
p
= 0.01
T
t = 50
p
s
Figure 5. Switching times
Channel I
Channel II
Oscilloscope
R > 1 M
L
C < 20 pF
L
50
1 k
95 10843
Figure 4. Test circuit, saturated operation
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6 (12)
Document Number 83501
Rev. A2, 08–Feb–01
TCET120.(G) up to TCET2200
Vishay Semiconductors
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
10000
1000
100
10
300
250
200
150
100
50
Coupled device
V
I =0
F
=20V
CE
Phototransistor
IR-diode
0
1
100
0
40
80
120
0
25
50
75
96 11700
T
amb
– Ambient Temperature ( °C )
95 11026
T
amb
– Ambient Temperature ( °C )
Figure 6. Total Power Dissipation vs.
Ambient Temperature
Figure 9. Collector Dark Current vs. Ambient Temperature
100
1000.0
100.0
10.0
1.0
V
=5V
CE
10
1
0.1
0.01
0.1
100
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1
10
96 11862
V – Forward Voltage ( V )
F
95 11027
I – Forward Current ( mA )
F
Figure 7. Forward Current vs. Forward Voltage
Figure 10. Collector Current vs. Forward Current
2.0
100
20mA
V
=5V
CE
I =5mA
F
I =50mA
F
1.5
1.0
0.5
0
10mA
5mA
10
1
2mA
1mA
0.1
100
–25
0
25
50
75
0.1
1
10
95 11025
T
amb
– Ambient Temperature ( °C )
95 10985
V
CE
– Collector Emitter Voltage ( V )
Figure 8. Relative Current Transfer Ratio vs.
Ambient Temperature
Figure 11. Collector Current vs. Collector Emitter Voltage
Document Number 83501
Rev. A2, 08–Feb–01
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7 (12)
TCET120.(G) up to TCET2200
Vishay Semiconductors
1.0
10
8
Non Saturated
Operation
20%
V =5V
R =100
L
0.8
S
t
t
on
CTR=50%
0.6
0.4
6
off
4
2
0
0.2
10%
0
100
10
1
10
0
2
4
6
95 11028
I
– Collector Current ( mA )
95 11030
I
– Collector Current ( mA )
C
C
Figure 12. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 15. Turn on / off Time vs. Collector Current
1000
50
Saturated Operation
V
=5V
CE
V =5V
S
40
30
R =1k
L
100
10
1
t
t
off
20
10
0
on
100
0.1
1
10
20
0
5
10
15
95 11029
I – Forward Current ( mA )
F
95 11031
I – Forward Current ( mA )
F
Figure 13. Current Transfer Ratio vs. Forward Current
Figure 16. Turn on / off Time vs. Forward Current
Pin1 Indication
Type
ET1100
820UTK63
15081
Date
Code
(YM)
Company Production
Logo Location
Coupling
System
Indicator
Figure 14. Marking example
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8 (12)
Document Number 83501
Rev. A2, 08–Feb–01
TCET120.(G) up to TCET2200
Vishay Semiconductors
Dimensions of TCET120. in mm
14789
Document Number 83501
Rev. A2, 08–Feb–01
www.vishay.com
9 (12)
TCET120.(G) up to TCET2200
Vishay Semiconductors
Dimensions of TCET120.G in mm
14792
www.vishay.com
10 (12)
Document Number 83501
Rev. A2, 08–Feb–01
TCET120.(G) up to TCET2200
Vishay Semiconductors
Dimensions of TCET2200 in mm
14784
Document Number 83501
Rev. A2, 08–Feb–01
www.vishay.com
11 (12)
TCET120.(G) up to TCET2200
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductorsproducts for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductorsagainst all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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12 (12)
Document Number 83501
Rev. A2, 08–Feb–01
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