TCLT16 [VISHAY]
Optocoupler with Phototransistor Output and AC Input; 光电耦合器与光电晶体管输出和AC输入
| 型号： | TCLT16 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler with Phototransistor Output and AC Input |
| 文件： | 总11页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TCLT16.. Series
Vishay Semiconductors
Optocoupler with Phototransistor Output and AC Input
Description
The TCLT16.. Series consists of a phototransistor
optically coupled to 2 gallium arsenide infrared-
emitting diodes in a 4-lead SO6L package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II (reinforced
15231
isolation):
For appl. class I – IV at mains voltage ≤ 300 V
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
4
1
3
2
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according to
the following equipment standards:
C
VDE 0884
Optocoupler for electrical safety requirements
(will be replaced by IEC 747–5–1.2.3)
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V
)
RMS
VDE 0804
Telecommunication apparatus and data
processing
IEC 65
Safety for mains-operated electronic and related
household apparatus
Order Instruction
Ordering Code
TCLT1600
CTR Ranking
80 to 300%
Remarks
4 Pin = Single channel
Document Number 83517
Rev. A3, 19–Mar–01
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1 (11)
TCLT16.. Series
Vishay Semiconductors
Features
Approvals:
Creepage current resistance according
to VDE 0303/IEC 112
Comparative Tracking Index: CTI ≥ 175
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
Thickness through insulation ≥ 0.75 mm
Creepage distance > 8 mm
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 – Double Protection
Tested acc. 60950: Am4: 1997 clause 2.9.6.
CSA (C-UL) 1577 recognized
file number E- 76222 - Double Protection
General features:
VDE 0884, Certificate number 132473
Low profile package
AC Input
VDE 0884 related features:
Isolation materials according to UL94-VO
Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)
Climatic classification 55/100/21 (IEC 68 part 1)
Rated impulse voltage (transient overvoltage)
V
IOTM
= 8 kV peak
Isolation test voltage
(partial discharge test voltage) V = 1.6 kV
Special construction:
pd
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
(848 V peak)
RMS
Low temperature coefficient of CTR
Coupling System W
Rated recurring peak voltage (repetitive)
= 600 V
V
IORM
RMS
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Test Conditions
Symbol
Value
6
Unit
V
V
R
Forward current
Forward surge current
Power dissipation
Junction temperature
I
60
mA
A
mW
C
F
t ≤ 10 s
I
1.5
100
125
p
FSM
T
≤ 25 C
P
T
j
amb
V
Output (Detector)
Parameter
Test Conditions
Symbol
Value
70
7
Unit
V
V
mA
mA
mW
C
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
V
V
CEO
ECO
I
C
50
t /T = 0.5, t ≤ 10 ms
I
100
150
125
p
p
CM
T
amb
≤ 25 C
P
V
T
j
Junction temperature
Coupler
Parameter
Isolation test voltage (RMS)
Total power dissipation
Operating ambient temperature range
Storage temperature range
Soldering temperature
Test Conditions
Symbol
Value
5
250
Unit
kV
mW
C
C
C
V
IO
P
tot
T
amb
≤ 25 C
T
–40 to +100
–40 to +100
235
amb
T
stg
T
sd
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2 (11)
Document Number 83517
Rev. A3, 19–Mar–01
TCLT16.. Series
Vishay Semiconductors
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
I = ± 50 mA
V = 0 V, f = 1 MHz
R
Symbol
Min.
Typ.
1.25
50
Max.
1.6
Unit
V
pF
V
F
F
C
j
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector emitter cut-off
current
Test Conditions
I = 1 mA
I = 100 A
Symbol
Min.
70
7
Typ.
10
Max.
100
Unit
V
V
V
V
C
CEO
ECO
CEO
E
V
CE
= 20 V, I = 0, E = 0
I
nA
f
Coupler
Parameter
Test Conditions
Symbol
V
CEsat
Min.
Typ.
Max.
0.3
Unit
V
Collector emitter saturation I = 10 mA, I = 1 mA
F
C
voltage
Cut-off frequency
V
= 5 V, I = 10 mA,
f
c
110
0.3
kHz
pF
CE
F
R = 100
f = 1 MHz
L
Coupling capacitance
C
k
Current Transfer Ratio (CTR)
Parameter
I /I
Test Conditions
= 5 V, I = 5 mA
Type
TCLT1600
Symbol
CTR
Min.
0.8
Typ.
Max.
3.0
Unit
V
CE
C F
F
Document Number 83517
Rev. A3, 19–Mar–01
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3 (11)
TCLT16.. Series
Vishay Semiconductors
Maximum Safety Ratings (according to VDE 0884) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input (Emitter)
Parameters
Forward current
Test Conditions
Symbol
Value
130
Unit
mA
I
si
Output (Detector)
Parameters
Power dissipation
Test Conditions
≤ 25 C
Symbol
Value
265
Unit
mW
T
amb
P
si
Coupler
Parameters
Rated impulse voltage
Safety temperature
Test Conditions
Symbol
V
IOTM
Value
8
150
Unit
kV
C
T
si
Insulation Rated Parameters (according to VDE 0884)
Parameter
Partial discharge test voltage –
Routine test
Test Conditions
100%, t = 1 s
Symbol
V
pd
Min.
1.6
Typ.
Max.
Unit
kV
test
Partial discharge test voltage –
Lot test (sample test)
t
= 60 s, t
= 10 s,
V
IOTM
8
1.3
kV
kV
Tr
test
(see figure 2)
V
pd
12
Insulation resistance
V
V
= 500 V
= 500 V,
R
R
10
IO
IO
11
10
IO
IO
T
V
= 100 C
= 500 V,
amb
9
R
IO
10
IO
T
= 150 C
amb
(construction test only)
V
IOTM
300
t , t = 1 to 10 s
1
2
t , t = 1 s
3
4
Phototransistor
Psi ( mW )
250
200
150
100
50
t
= 10 s
= 12 s
test
t
stres
V
Pd
V
V
IOWM
IORM
IR-Diode
Isi ( mA )
0
t
3
t
t
test 4
0
150
0
25
50
75
100
125
t
1
t
Tr
= 60 s
t
2
t
stres
13930
94 9182
T – Safety Temperature ( °C )
si
t
Figure 1. Derating diagram
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
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4 (11)
Document Number 83517
Rev. A3, 19–Mar–01
TCLT16.. Series
Vishay Semiconductors
Switching Characteristics
Parameter
Delay time
Rise time
Turn-on time
Storage time
Fall time
Turn-off time
Turn-on time
Turn-off time
Test Conditions
V = 5 V, I = 2 mA, R = 100 (see figure 3)
Symbol
Typ.
3.0
3.0
6.0
0.3
4.7
5.0
9.0
10.0
Unit
s
s
s
s
s
s
s
s
t
d
S
C
L
t
r
t
on
t
s
t
f
t
t
t
off
on
off
V = 5 V, I = 10 mA, R = 1 k (see figure 4)
S
F
L
+ 5 V
96 11698
I
F
I
F
I
F
0
adjusted through
input amplitude
I
C
= 2 mA;
0
R
= 50
G
t
t
p
t
p
= 0.01
T
I
C
t = 50
s
p
Channel I
Channel II
100%
90%
Oscilloscope
R = 1 M
L
C = 20 pF
L
50
100
95 10804
Figure 1. Test circuit, non-saturated operation
10%
0
t
t
r
t
s
t
f
t
d
t
on
t
off
+ 5 V
I
F
I = 10 mA
F
0
I
C
t
t
t
t
pulse duration
delay time
rise time
t
t
t
storage time
fall time
turn-off time
p
s
d
f
R
= 50
G
(= t + t )
r
off
s
f
t
p
(= t + t )
turn-on time
= 0.01
on
d
r
T
t = 50
p
s
Figure 3. Switching times
Channel I
Channel II
Oscilloscope
R > 1 M
L
C < 20 pF
L
50
1 k
95 10843
Figure 2. Test circuit, saturated operation
Document Number 83517
Rev. A3, 19–Mar–01
www.vishay.com
5 (11)
TCLT16.. Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
10000
1000
100
10
300
250
200
150
100
50
Coupled device
V
I =0
F
=20V
CE
Phototransistor
IR-diode
0
1
100
0
40
80
120
0
25
50
75
96 11700
T
amb
– Ambient Temperature ( °C )
95 11026
T
amb
– Ambient Temperature ( °C )
Figure 4. Total Power Dissipation vs.
Ambient Temperature
Figure 7. Collector Dark Current vs. Ambient Temperature
100
1000.0
100.0
10.0
1.0
V
=5V
CE
10
1
0.1
0.01
0.1
100
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
– Forward Voltage ( V )
0.1
1
10
I – Forward Current ( mA )
F
96 11862
V
F
95 11027
Figure 5. Forward Current vs. Forward Voltage
Figure 8. Collector Current vs. Forward Current
2.0
100
20mA
V
=5V
CE
I =5mA
F
I =50mA
F
1.5
1.0
0.5
0
10mA
5mA
10
1
2mA
1mA
0.1
100
–25
0
25
50
75
0.1
1
10
95 11025
T
amb
– Ambient Temperature ( °C )
95 10985
V
CE
– Collector Emitter Voltage ( V )
Figure 6. Relative Current Transfer Ratio vs.
Ambient Temperature
Figure 9. Collector Current vs. Collector Emitter Voltage
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6 (11)
Document Number 83517
Rev. A3, 19–Mar–01
TCLT16.. Series
Vishay Semiconductors
1.0
0.8
0.6
10
8
Non Saturated
Operation
20%
V =5V
S
t
t
on
R =100
L
CTR=50%
6
off
0.4
0.2
0
4
2
0
10%
100
10
1
10
– Collector Current ( mA )
0
2
4
6
95 11028
I
95 11030
I
– Collector Current ( mA )
C
C
Figure 10. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 12. Turn on / off Time vs. Collector Current
1000
50
Saturated Operation
V =5V
R =1k
L
V
=5V
CE
S
40
30
100
10
1
t
t
off
20
10
0
on
100
20
0.1
1
10
0
5
10
I – Forward Current ( mA )
F
15
95 11029
I
F
– Forward Current ( mA )
95 11031
Figure 11. Current Transfer Ratio vs. Forward Current
Figure 13. Turn on / off Time vs. Forward Current
Pin 1 Indication
Type
TCLT1600
901WTK27
15248
Date
Code
(YM)
System Company Production
Letter
Logo
Location
Figure 14. Marking example
Document Number 83517
Rev. A3, 19–Mar–01
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7 (11)
TCLT16.. Series
Vishay Semiconductors
Dimensions of TCLT16.. in mm
15243
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8 (11)
Document Number 83517
Rev. A3, 19–Mar–01
TCLT16.. Series
Vishay Semiconductors
Dimensions of Reel in mm
W
1
Reel Hub
W
2
16515
Version
G
Tape Width
16
A
N
W
W
2 max
1
330 ± 1
100 ± 1.5
16.4 + 2
22.4
Dimensions of Leader and Trailer in mm
Trailer
Leader
no devices
devices
no devices
End
Start
min. 200
min. 400
96 11818
Document Number 83517
Rev. A3, 19–Mar–01
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9 (11)
TCLT16.. Series
Vishay Semiconductors
Dimensions of Tape in mm
16516
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10 (11)
Document Number 83517
Rev. A3, 19–Mar–01
TCLT16.. Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductorsproducts for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductorsagainst all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83517
Rev. A3, 19–Mar–01
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11 (11)
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