TCMT4600T0 [VISHAY]
Optocoupler, Phototransistor Output, AC Input, Single/Quad Channel, Half Pitch Mini-Flat Package; 光电耦合器，光电晶体管输出，AC输入，单/四通道，半间距微型扁平封装
| 型号： | TCMT4600T0 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output, AC Input, Single/Quad Channel, Half Pitch Mini-Flat Package |
| 文件： | 总8页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TCMT1600 / TCMT4600
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input, Single/Quad
Channel, Half Pitch Mini-Flat Package
Features
• Low profile package (half pitch)
• AC Isolation test voltage 3750 V
RMS
• Low coupling capacitance of typical 0.3 pF
• Low temperature coefficient of CTR
• Wide ambient temperature range
• Lead-free component
17224
C
E
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
9
8
Agency Approvals
• UL1577, File No. E76222 System Code M, Double
Protection
1
2
A
C
4 PIN
• C-UL CSA 22.2 bulletin 5A, System Code U
16 PIN
e3
Pb
C
Applications
Programmable logic controllers
Pb-free
Description
Order Information
The low profile Miniflat package includes an Optocou-
pler with AC Input and Transistor Output. It is avail-
able in single channel (4 pin) TCMT1600 or quad
channel (16 pin)TCMT4600.
Part
Remarks
TCMT1600
CTR 80 - 300 %, Single Channel, SMD-4
CTR 80 - 300 %, Quad Channel, SMD-16
CTR 80 - 300 %, Quad Channel, SMD-16
TCMT4600
TCMT4600T0*
NOTE: Available only on tape and reel.
* Product is rotated 180° in tape and reel cavity.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
6
Unit
V
Reverse voltage
Forward current
IF
60
1.5
mA
A
Forward surge current
Power dissipation
Junction temperature
tp ≤ 10 µs
IFSM
Pdiss
Tj
100
125
mW
°C
Document Number 83512
Rev. 1.5, 02-Feb-05
www.vishay.com
1
TCMT1600 / TCMT4600
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
VCEO
Value
70
Unit
V
Collector emitter voltage
Emitter collector voltage
Collector current
VECO
IC
7
V
50
mA
mA
mW
°C
Collector peak current
Power dissipation
tp/T = 0.5, tp ≤ 10 ms
ICM
Pdiss
Tj
100
150
125
Junction temperature
Coupler
Parameter
Test condition
Symbol
Value
3750
Unit
1)
AC isolation test voltage (RMS)
VRMS
VISO
Total power dissipation
Ptot
250
mW
°C
Operating ambient temperature
range
Tamb
- 40 to + 100
Storage temperature range
Soldering temperature
Tstg
Tsld
- 40 to + 100
240
°C
°C
1) Related to standard climate 23/50 DIN 50014
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 50 mA
R = 0 V, f = 1 MHz
Symbol
VF
Min
Typ.
1.25
Max
1.6
Unit
V
Forward voltage
Junction capacitance
V
Cj
50
pF
Output
Parameter
Test condition
IC = 100 µA
E = 100 µA
CE = 20 V, IF = 0, E = 0
Symbol
VCEO
Min
70
Typ.
Max
100
Unit
V
Collector emitter voltage
Emitter collector voltage
Collector dark current
I
VECO
ICEO
7
V
V
nA
Coupler
Parameter
Test condition
Symbol
VCEsat
Min
Typ.
Max
0.3
Unit
V
Collector emitter saturation
voltage
IF = 10 mA, IC = 1 mA
Cut-off frequency
IF = 10 mA, VCE = 5 V,
fc
100
0.3
kHz
pF
RL = 100 Ω
Capacitance (input-output)
f = 1 MHz
CIO
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2
Document Number 83512
Rev. 1.5, 02-Feb-05
TCMT1600 / TCMT4600
Vishay Semiconductors
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
CTR
Min
80
Typ.
Max
300
Unit
%
IC/IF
VCE = 5 V, IF = 5 mA
TCMT1600
TCMT4600
CTR
80
300
%
Switching Characteristics
Parameter
Test condition
Symbol
td
Min
Typ.
Max
Unit
Delay time
VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1)
3.0
3.0
4.7
0.3
6.0
5.0
9.0
18.0
µs
µs
µs
µs
µs
µs
µs
µs
Rise time
V
V
V
V
V
V
V
S = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1)
S = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1)
S = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1)
S = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1)
S = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1)
S = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 1)
S = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 1)
tr
Fall time
tf
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
ts
ton
toff
ton
toff
+5 V
I
F
I
F
96 11698
I
F
0
I
C
= 2 mA; adjusted throug
input amplitude
0
t
p
t
I
C
R
= 50 Ω
= 0.01
G
100%
90%
t
p
T
t
= 50 ms
p
Channel I
10%
0
Oscilloscope
Channel II
R
C
= 1 MΩ
t
r
L
L
50 Ω 100 Ω
t
= 20 pF
t
t
f
d
t
t
s
15234
t
off
on
t
t
t
t
pulse duration
delay time
rise time
t
t
t
storage time
fall time
turn-off time
p
s
d
r
f
(= t + t )
off
s
f
(= t + t )
turn-on time
on
d
r
Figure 1. Test circuit, non-saturated operation
Figure 3. Switching Times
+5 V
I
F
I = 10 mA
F
0
R
= 50 Ω
= 0.01
G
t
p
T
t
= 50 ms
p
Channel I
Channel II
Oscilloscope
R
C
= 1 MΩ
= 20 pF
L
L
50 Ω
1 kΩ
15235
Figure 2. Test circuit, saturated operation
Document Number 83512
Rev. 1.5, 02-Feb-05
www.vishay.com
3
TCMT1600 / TCMT4600
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10000
300
V
= 20 V
= 0
CE
Coupled device
I
F
250
200
150
100
50
1000
100
Phototransistor
IR-diode
10
1
0
100
0
25
50
75
0
40
80
120
96 11700
T
amb
– Ambient Temperature(°C )
T
amb
- Ambient Temperature (°C )
95 11026
Figure 4. Total Power Dissipation vs. Ambient Temperature
Figure 7. Collector Dark Current vs. Ambient Temperature
100
1000
100
10
V
=5V
CE
10
1
0.1
1
0.01
0.1
100
0.1
1
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
- Forward Voltage ( V )
I
– Forward Current ( mA )
96 11862
V
95 11027
F
F
Figure 5. Forward Current vs. Forward Voltage
Figure 8. Collector Current vs. Forward Current
2.0
100
20mA
V
=5V
CE
I =5mA
F
I =50mA
F
1.5
1.0
10mA
10
5mA
2mA
1mA
1
0.5
0
0.1
100
–25
0
25
50
75
0.1
1
10
T
amb
– Ambient Temperature ( °C )
V
CE
– Collector Emitter Voltage ( V )
95 11025
95 10985
Figure 6. Relative Current Transfer Ratio vs. Ambient
Temperature
Figure 9. Collector Current vs. Collector Emitter Voltage
www.vishay.com
Document Number 83512
Rev. 1.5, 02-Feb-05
4
TCMT1600 / TCMT4600
Vishay Semiconductors
1.0
0.8
0.6
10
Non Saturated
Operation
20%
V =5V
8
6
S
t
t
on
R =100Ω
L
CTR=50%
off
0.4
0.2
0
4
2
0
10%
100
10
1
10
– Collector Current ( mA )
0
2
C
4
6
I
I
– Collector Current ( mA )
95 11028
95 11030
C
Figure 10. Collector Emitter Saturation Voltage vs. Collector
Current
Figure 13. Turn on / off Time vs. Collector Current
1000
V
=5V
CE
100
10
1
100
0.1
1
10
I
– Forward Current ( mA )
95 11029
F
Figure 11. Current Transfer Ratio vs. Forward Current
50
Saturated Operation
V =5V
R =1k Ω
L
40
30
S
t
t
off
20
10
0
on
20
0
5
10
15
I
– Forward Current ( mA )
95 11031
F
Figure 12. Turn on / off Time vs. Forward Current
Document Number 83512
Rev. 1.5, 02-Feb-05
www.vishay.com
5
TCMT1600 / TCMT4600
Vishay Semiconductors
Package Dimensions in mm
16283
www.vishay.com
6
Document Number 83512
Rev. 1.5, 02-Feb-05
TCMT1600 / TCMT4600
Vishay Semiconductors
Package Dimensions in mm
15226
Document Number 83512
Rev. 1.5, 02-Feb-05
www.vishay.com
7
TCMT1600 / TCMT4600
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8
Document Number 83512
Rev. 1.5, 02-Feb-05
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