TCST1230_06 [VISHAY]
Transmissive Optical Sensor with Phototransistor Output; 透射光学传感器，具有光电晶体管输出
| 型号： | TCST1230_06 |
| 厂家： | 
VISHAY |
| 描述： | Transmissive Optical Sensor with Phototransistor Output |
| 文件： | 总7页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TCST1230
Vishay Semiconductors
Transmissive Optical Sensor with Phototransistor Output
Description
The TCST1230 is a transmissive sensor that includes
an infrared emitter and phototransistor, located face-
to-face on the optical axes in a leaded package which
blocks visible light.
Top view
A
C
E
C
Features
19205
• Package type: Leaded
• Detector type: Phototransistor
• Dimensions:
e2
L 9.2 mm x W 4.8 mm x H 5.4 mm
• Gap: 2.8 mm
Applications
• Optical switch
• Shaft encoder
• Aperture: 0.5 mm
• Typical output current under test: I = 2 mA
C
• Daylight blocking filter
• Detection of opaque material such as paper
• Detection of magnetic tapes
• Emitter wavelength: 950 nm
• Lead (Pb)-free soldering released
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
• Minimum order quantity: 4800 pcs, 60 pcs/tube
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Coupler
Parameter
Test condition
Tamb ≤ 25 °C
Symbol
Ptot
Value
250
Unit
mW
°C
Total power dissipation
Operation temperature range
Storage temperature range
Soldering temperature
Tamb
Tstg
Tsd
- 25 to + 85
- 40 to + 100
260
°C
Distance to package 1.6 mm,
°C
t ≤ 5 s
Input (Emitter)
Parameter
Test condition
Symbol
VR
Value
6
Unit
V
Reverse voltage
IF
IFSM
PV
Forward current
60
mA
A
tp ≤ 10 µA
Forward surge current
Power dissipation
Junction temperature
3
Tamb ≤ 25 °C
100
100
mW
°C
Tj
Document Number 83765
www.vishay.com
Rev. 1.7, 06-Nov-06
1
TCST1230
Vishay Semiconductors
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Test condition
Symbol
VCEO
Value
70
Unit
V
VECO
IC
7
V
100
150
100
mA
mW
°C
Tamb ≤ 25 °C
PV
Tj
Power dissipation
Junction temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Coupler
Parameter
Test condition
Symbol
Min
0.5
Typ.
Max
14
Unit
mA
V
VCE = 10 V, IF = 20 mA
IF = 20 mA, IC = 0.2 mA
IC
Collector current
Collector emitter saturation
VCEsat
0.4
voltage
Input (Emitter)
Parameter
Test condition
IF = 60 mA
Symbol
VF
Min
Typ.
1.25
50
Max
1.5
Unit
V
Forward voltage
VR = 0, f = 1 MHz
Cj
Junction capacitance
pF
Output (Detector)
Parameter
Collector emittter voltage
Emitter collector voltage
Collector dark current
Test condition
IC = 1 mA
Symbol
VCEO
Min
70
7
Typ.
10
Max
100
Unit
V
IE = 10 µA
VECO
ICEO
V
VCE = 25 V, IF = 0, E = 0
nA
Switching Characteristics
Parameter
Test condition
Symbol
ton
Min
Typ.
15.0
Max
Unit
µs
Turn-on time
IC = 1 mA, VCE = 5 V,
RL = 100 Ω (see figure 1)
Turn-off time
IC = 1 mA, VCE = 5 V,
toff
10.0
µs
RL = 100 Ω (see figure 1)
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Document Number 83765
2
Rev. 1.7, 06-Nov-06
TCST1230
Vishay Semiconductors
+ 5 V
= 1 mA;
I
I
F
400
300
F
0
adjusted by I
I
C
F
R
= 50 Ω
= 0.01
= 50 µs
G
Coupled device
t
p
T
200
100
t
p
Phototransistor
IR - diode
Channel I
Channel II
Oscilloscope
R
C
≥ 1 MΩ
≤ 20 pF
L
L
50 Ω
100 Ω
0
20223
0
30
60
90
120
150
T
amb
- Ambient Temperature (°C)
95 11088
Figure 1. Test Circuit for ton and toff
Figure 3. Power Dissipation Limit vs. Ambient Temperature
I
F
96 11698
0
t
p
t
I
C
100 %
90 %
10 %
0
t
r
t
t
t
off
d
t
t
s
f
t
on
t
t
t
t
pulse duration
delay time
rise time
t
storage time
fall time
turn-off time
p
s
t
t
d
r
f
(= t + t )
off
s
f
(=t + t )
turn-on time
on
r
d
Figure 2. Switching Times
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
2.0
1000
100
10
V
= 5 V
CE
I
= 20 mA
F
1.5
1.0
1
0.5
0
0.1
0
0.2 0.4 0.6 0.8 1.0
1.4 1.6 1.8 2.0
1.2
V - Forward Voltage (V)
F
100
- 25
25
50
0
75
96 11862
T
amb
- Ambient Temperature (°C)
95 11089
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
Document Number 83765
Rev. 1.7, 06-Nov-06
www.vishay.com
3
TCST1230
Vishay Semiconductors
100
10
1
10000
V
= 5 V
CE
V
= 25 V
= 0
CE
I
F
1000
100
10
1
0.1
25
50
100
0.1
0
100
0
75
10
T
amb
- Ambient Temperature (°C)
95 11090
95 11085
I
- Forward Current (mA)
F
Figure 6. Collector Dark Current vs. Ambient Temperature
Figure 9. Current Transfer Ratio vs. Forward Current
20
10
V
= 10 V
CE
Non saturated
operation
V
R
= 5 V
= 100 Ω
15
10
S
L
1
0.1
t
t
on
off
5
0
0.01
0.001
0
2
4
6
10
8
0.1
1
10
100
I
- Collector Current (mA)
95 11086
95 11083
C
I
- Forward Current (mA)
F
Figure 7. Collector Current vs. Forward Current
Figure 10. Turn on/off Time vs. Collector Current
10
110
0
100
A = 0.5 mm
I
= 50 mA
20 mA
90
F
80
1
0.1
s
70
60
50
40
30
20
10
0
10 mA
5 mA
2 mA
0.01
- 0.5 - 0.4 - 0.3 - 0.2 - 0.1
0
0.1 0.2 0.3 0.4 0.5
0.1
1
10
100
s - Displacement (mm)
95 11084
VCE - Collector Emitter Voltage (V)
96 12006
Figure 8. Collector Current vs. Collector Emitter Voltage
Figure 11. Relative Collector Current vs. Displacement
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Document Number 83765
4
Rev. 1.7, 06-Nov-06
TCST1230
Vishay Semiconductors
Package Dimensions in mm
96 12083
Tube Dimensions
20256
Document Number 83765
www.vishay.com
Rev. 1.7, 06-Nov-06
5
TCST1230
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
Document Number 83765
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Rev. 1.7, 06-Nov-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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