TCUT1200 [VISHAY]
Subminiature Dual Channel Optical Sensor with Phototransistor Output; 超小型双通道光学传感器与光电晶体管输出型号: | TCUT1200 |
厂家: | VISHAY |
描述: | Subminiature Dual Channel Optical Sensor with Phototransistor Output |
文件: | 总9页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TCUT1200
Vishay Telefunken
Subminiature Dual Channel Optical Sensor with
Phototransistor Output
Description
This device has a compact construction where the
emitting-light source and the detector are located
face-to-face on the same optical axes.
The operating wavelength is 950 nm. The detector
side incorporates 2 phototransistors. Distance of both
channels is 0.8 mm.
Applications
Accurate position sensor for encoder,
Detection for motion direction,
14849
Suitable for computer mouse and track-balls
Features
Dual channel with 0.3 mm aperture
Channel 1 to channel 2 distance 0.8 mm
(optical center)
A
Cath
Cath
Coll
E
Gap 2 mm
Package height: 4 mm
Surface Mountable Technology (SMD)
Parts shipped taped and reeled 2000 pcs/ reel
E
13894
Soldering method according to CECC00802
table 1, class B or C
Order Instruction
Ordering Code
TCUT1200
Resolution (mm) / Aperture (mm)
0.24 0.3
Remarks
/
Document Number 83755
Rev. A7, 01–Jun–99
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1 (9)
TCUT1200
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Test Conditions
Symbol
Value
5
25
100
75
Unit
V
mA
mA
mW
V
R
I
F
t ≤ 10 s
T
amb
I
p
FSM
≤ 25 C
P
V
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Test Conditions
Symbol
Value
70
7
20
75
Unit
V
V
mA
mW
V
V
CEO
ECO
I
C
Power dissipation
T
amb
≤ 25 C
P
V
Coupler
Parameter
Test Conditions
≤ 25 C
Symbol
P
tot
Value
150
–40 to +85
–40 to +100
230
Unit
mW
C
C
C
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
T
amb
T
amb
T
stg
t ≤ 5 s
T
sd
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2 (9)
Document Number 83755
Rev. A7, 01–Jun–99
TCUT1200
Vishay Telefunken
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Test Conditions
I = 15 mA
Symbol
Min.
Typ.
1.2
Max.
1.5
Unit
V
V
F
F
Reverse current
V = 5 V
R
I
R
10
A
Junction capacitance
V = 0 V, f = 1 MHz
R
C
j
50
pF
Output (Detector)
Parameter
Collector emitter voltage I = 1 mA
Emitter collector voltage
Collector emitter cut-off
current
Test Conditions
Symbol
Min.
70
7
Typ.
10
Max.
100
Unit
V
V
V
V
C
CEO
ECO
CEO
I = 100 A
E
V
CE
= 25 V, I = 0, E = 0
I
nA
F
Coupler
Parameter
Collector current per
channel
Collector emitter
saturation voltage
Test Conditions
Symbol
Min.
300
Typ.
500
Max.
0.4
Unit
A
V
= 5 V, I = 15 mA
I
C
CE
F
I = 15 mA, I = 0.05 mA
V
CEsat
V
F
C
200
I = 15 mA
F
+ V = 5 V
C
Sensor
150
100
50
74HCT14
Emitter / Detector
V
E
U
10 k
Q
0
0
25
50
75
100
GND
GND
13887
13664
T
amb
– Ambient Temperature ( °C )
Figure 1. Derating diagram
Figure 2. Application example
Document Number 83755
Rev. A7, 01–Jun–99
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3 (9)
TCUT1200
Vishay Telefunken
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
1000.0
100.0
10.0
1.0
1.3
1.2
1.1
1.0
0.9
0.8
I =15mA
F
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
– Forward Voltage ( V )
–40 –20
0
20
40
60
80 100
13660
V
13661
T
amb
– Ambient Temperature ( °C )
F
Figure 3. Forward Current vs. Forward Voltage
Figure 6. Forward Voltage vs. Ambient Temperature
0.180
1.0
I =15mA
I =50 A
C
F
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
=5V
CE
0.160
0.140
0.120
0.100
0.080
0.060
0.040
0.020
0
I =15mA
F
I =5mA
F
–40 –20
0
20
40
60
80 100
–40 –20
0
20
– Ambient Temperature ( °C )
amb
40
60
80 100
13662
T
amb
– Ambient Temperature ( °C )
13663
T
Figure 4. Collector Emitter Saturation Voltage vs.
Ambient Temperature
Figure 7. Collector Current vs. Ambient Temperature
10.000
10000
V
=5V
CE
V
=10V
CE
I =0
F
1.000
0.100
0.010
0.001
1000
100
10
1
0.1
1.0
10.0
100.0
0
10 20 30 40 50 60 70 80 90 100
– Ambient Temperature ( °C )
13665
I
– Forward Current ( mA )
96 11875
T
amb
F
Figure 5. Collector Current vs. Forward Current
Figure 8. Collector Dark Current vs. Ambient Temperature
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4 (9)
Document Number 83755
Rev. A7, 01–Jun–99
TCUT1200
Vishay Telefunken
1 . 2 5
1 . 0 0
0 . 7 5
0 . 5 0
0 . 2 5
0
s
–1 . 5 –1 . 0 –0 . 5
0 . 0
0 . 5
1 . 0
1 . 5
1 3 6 5 7
s – Dis placement ( mm )
Figure 9. Relative Collector Current vs. Displacement
Packing
Dampproof packing
Products will be packed in anti-humidity aluminium bags to prevent the products from moisture absorption
duringtransportationandstorage. Eachbagcontainsadesiccantwithmoistureindicators. Intheeventbags
absorb moisture, the indicators change their color from blue to pink.
Recommended method of storage
Dry box storage is recommended to prevent the parts from moisture absorption. The following conditions
should be preserved if dry boxes are not available.
Storage temperature:
10 to 30°C
Storage humidity:
60% RH max
In case of moisture absorption the device will recover to the former condition by drying under the following
recommended conditions:
Taped version:
60°C/ 48 h
Untaped version:
60°C/ 48 h
Aluminium bag
Label
Reel
14940
Document Number 83755
Rev. A7, 01–Jun–99
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TCUT1200
Vishay Telefunken
Dimensions of TCUT1200 in mm
1 2 8 9 8
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Document Number 83755
Rev. A7, 01–Jun–99
TCUT1200
Vishay Telefunken
Dimensions of Reel and Shape in mm
1 3 7 2 2
Document Number 83755
Rev. A7, 01–Jun–99
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TCUT1200
Vishay Telefunken
Dimensions of Tape in mm
1 3 7 2 0
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Document Number 83755
Rev. A7, 01–Jun–99
TCUT1200
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83755
Rev. A7, 01–Jun–99
www.vishay.com
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