TEFD4300_14 [VISHAY]
Vishay Semiconductors;型号: | TEFD4300_14 |
厂家: | VISHAY |
描述: | Vishay Semiconductors |
文件: | 总5页 (文件大小:93K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TEFD4300
Vishay Semiconductors
www.vishay.com
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = 20ꢀ
• Package matched with IR emitter series
VSLB3940, TSUS4300, and TSAL4400
DESCRIPTION
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TEFD4300 is a silicon PIN photodiode with high radiant
sensitivity in clear, T-1 plastic package. It is sensitive to
visible and near infrared radiation.
APPLICATIONS
• High speed photo detector for data transmission
• Optical switches
• Counters and sorters
• Interrupters
• Encoders
• Position sensors
PRODUCT SUMMARY
COMPONENT
Ira (μA)
ϕ (deg)
λ0.1 (nm)
TEFD4300
17
20
350 to 1120
Note
•
Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TEFD4300
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
Note
MOQ: minimum order quantity
•
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 ꢀC, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
V
Reverse voltage
VR
60
215
Power dissipation
Tamb ≤ 25 ꢀC
PV
mW
ꢀC
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tj
100
Tamb
Tstg
-40 to +100
-40 to +100
260
ꢀC
ꢀC
t ≤ 3 s, 2 mm from case
Connected with Cu wire, 0.14 mm2
Tsd
ꢀC
RthJA
450
K/W
Rev. 1.2, 04-Aug-14
Document Number: 83471
1
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEFD4300
Vishay Semiconductors
www.vishay.com
BASIC CHARACTERISTICS (Tamb = 25 ꢀC, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
Forward voltage
Breakdown voltage
Reverse dark current
IF = 50 mA
VF
1
IR = 100 μA, E = 0
V(BR)
Iro
60
V
VR = 10 V, E = 0
0.15
3.3
1.2
350
-2.6
15
3
nA
V
R = 0 V, f = 1 MHz, E = 0
R = 5 V, f = 1 MHz, E = 0
CD
pF
Diode capacitance
V
CD
pF
Open circuit voltage
Temperature coefficient of VO
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
VOC
TKVo
Ik
mV
mV/K
μA
Temperature coefficient of Ik
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
TKIk
Ira
0.1
17
%/K
μA
9
27
ϕ
20
deg
nm
nm
ns
λp
950
λ0.1
tr
350
1120
V
R = 10 V, RL = 1 kΩ, λ = 820 nm
R = 10 V, RL = 1 kΩ, λ = 820 nm
100
100
Fall time
V
tf
ns
BASIC CHARACTERISTICS (Tamb = 25 ꢀC, unless otherwise specified)
1.4
10-6
10-7
VR = 10 V
VR = 5 V
λ = 950 nm
1.2
10-8
1.0
10-9
10-10
0.8
10-11
0.6
10-12
20
40
80
100
60
0
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
94 8416
Tamb - Ambient Temperature (ꢀC)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.2, 04-Aug-14
Document Number: 83471
2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEFD4300
Vishay Semiconductors
www.vishay.com
100
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
tp = 100 ꢁs, VR = 5 V, λ = 950 nm
1
0.1
0.01
1
10
100
1000
10 000
- 90 - 60 - 30
0
30
60
90
Ee - Irradiance (ꢁW/cm2)
ϕ - Angular Displacement (ꢀ)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
10-6
3.5
f = 1 MHz, E = 0
100 ꢀC
3.0
2.5
2.0
1.5
1.0
10-7
75 ꢀC
10-8
50 ꢀC
10-9
25 ꢀC
10-10
0 ꢀC
10-11
0.5
0
10-12
0.01
0.1
1
10
100
0
5
10
15
20
VR - Reverse Voltage (V)
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Fig. 7 - Dark Current vs. Reverse Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400 500 600 700 800 900 1000 1100
λ - Wavelength (nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Rev. 1.2, 04-Aug-14
Document Number: 83471
3
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEFD4300
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters
3.2 0.1
A
C
SENSITIVE AREA
Ø 3 0.1
AREA NOT PLANE
0.4 -+00..0155
0.5 -+00..12
2.54 nom.
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5411.01-4
Issue: 2; 28.07.14
Rev. 1.2, 04-Aug-14
Document Number: 83471
4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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