TEMD5010X01_09 [VISHAY]

Silicon PIN Photodiode; 硅PIN光电二极管
TEMD5010X01_09
型号: TEMD5010X01_09
厂家: VISHAY    VISHAY
描述:

Silicon PIN Photodiode
硅PIN光电二极管

光电 二极管 光电二极管
文件: 总7页 (文件大小:146K)
中文:  中文翻译
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TEMD5010X01  
Vishay Semiconductors  
Silicon PIN Photodiode  
FEATURES  
• Package type: surface mount  
• Package form: top view  
• Dimensions (L x W x H in mm): 5 x 4.24 x 1.12  
• Radiant sensitive area (in mm2): 7.5  
• AEC-Q101 qualified  
• High photo sensitivity  
• High radiant sensitivity  
• Suitable for visible and near infrared radiation  
• Fast response times  
20535  
• Angle of half sensitivity: ϕ = 65°  
• Floor life: 72 h, MSL 4, acc. J-STD-020  
• Lead (Pb)-free reflow soldering  
DESCRIPTION  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TEMD5010X01 is a high speed and high sensitive PIN  
photodiode. It is a miniature surface mount device (SMD)  
including the chip with a 7.5 mm2 sensitive area detecting  
visible and near infrared radiation.  
• Find out more about Vishay’s Automotive Grade Product  
requirements at: www.vishay.com/applications  
APPLICATIONS  
• High speed photo detector  
PRODUCT SUMMARY  
COMPONENT  
Ira (µA)  
ϕ (deg)  
λ0.1 (nm)  
TEMD5010X01  
55  
65  
430 to 1100  
Note  
Test conditions see table “Basic Characteristics”  
ORDERING INFORMATION  
ORDERING CODE  
PACKAGING  
REMARKS  
PACKAGE FORM  
TEMD5010X01  
Tape and reel  
MOQ: 1500 pcs, 1500 pcs/reel  
Top view  
Note  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
60  
UNIT  
V
Reverse voltage  
VR  
PV  
Tj  
Power dissipation  
Tamb 25 °C  
215  
mW  
°C  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Thermal resistance junction/ambient  
100  
Tamb  
Tstg  
- 40 to + 100  
- 40 to + 110  
260  
°C  
°C  
Acc. reflow solder profile fig. 8  
Tsd  
°C  
RthJA  
350  
K/W  
Note  
T
amb = 25 °C, unless otherwise specified  
Document Number: 84679  
Rev. 1.4, 12-May-09  
For technical questions, contact: detectortechsupport@vishay.com  
www.vishay.com  
443  
TEMD5010X01  
Silicon PIN Photodiode  
Vishay Semiconductors  
BASIC CHARACTERISTICS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VF  
MIN.  
TYP.  
MAX.  
UNIT  
V
Forward voltage  
IF = 50 mA  
1
1.3  
Breakdown voltage  
I
R = 100 µA, E = 0  
V(BR)  
Iro  
60  
V
Reverse dark current  
V
R = 10 V, E = 0  
2
70  
30  
40  
nA  
V
V
R = 0 V, f = 1 MHz, E = 0  
R = 3 V, f = 1 MHz, E = 0  
CD  
pF  
Diode capacitance  
CD  
25  
pF  
Open circuit voltage  
Ee = 1 mW/cm2, λ = 950 nm  
Ee = 1 mW/cm2, λ = 950 nm  
Ee = 1 mW/cm2, λ = 950 nm  
Ee = 1 mW/cm2, λ = 950 nm  
Ee = 1 mW/cm2, λ = 950 nm,  
Vo  
350  
- 2.6  
50  
mV  
mV/K  
µA  
Temperature coefficient of Vo  
Short circuit current  
TKVo  
Ik  
Temperature coefficient of Ik  
TKIk  
0.1  
%/K  
Reverse light current  
Ira  
45  
55  
µA  
V
R = 5 V  
Angle of half sensitivity  
ϕ
65  
940  
deg  
nm  
Wavelength of peak sensitivity  
Range of spectral bandwidth  
Noise equivalent power  
λp  
λ0.1  
NEP  
430 to 1100  
4 x 10-14  
nm  
V
R = 10 V, λ = 950 nm  
W/Hz  
V
R = 10 V, RL = 1 kΩ,  
λ = 820 nm  
Rise time  
tr  
tf  
100  
100  
ns  
ns  
V
R = 10 V, RL = 1 kΩ,  
λ = 820 nm  
Fall time  
Note  
Tamb = 25 °C, unless otherwise specified  
BASIC CHARACTERISTICS  
Tamb = 25 °C, unless otherwise specified  
1000  
100  
10  
1.4  
1.2  
1.0  
VR = 5 V  
λ = 950 nm  
0.8  
VR = 10 V  
80  
0.6  
1
20  
40  
60  
100  
0
20  
40  
60  
80  
100  
Tamb - Ambient Temperature (°C)  
94 8403  
Tamb - Ambient Temperature (°C)  
94 8409  
Fig. 1 - Reverse Dark Current vs. Ambient Temperature  
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature  
www.vishay.com  
444  
For technical questions, contact: detectortechsupport@vishay.com  
Document Number: 84679  
Rev. 1.4, 12-May-09  
TEMD5010X01  
Silicon PIN Photodiode  
Vishay Semiconductors  
1000  
100  
10  
1.0  
0.8  
0.6  
0.4  
0.2  
0
VR = 5 V  
1
λ = 950 nm  
0.1  
0.01  
10  
0.1  
1
1150  
350  
550  
750  
950  
Ee - Irradiance (mW/cm2)  
12787  
λ - Wavelength (nm)  
94 8420  
Fig. 3 - Reverse Light Current vs. Irradiance  
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength  
0°  
10°  
20°  
100  
30°  
40°  
2
1 mW/cm  
2
0.5mW/cm  
1.0  
0.9  
2
0.2 mW/cm  
10  
50°  
60°  
2
0.1 mW/cm  
0.8  
2
0.05 mW/cm  
70°  
0.7  
80°  
λ = 950 nm  
1
100  
0.1  
1
10  
0.6  
0.4  
0.2  
0
V
R - Reverse Voltage (V)  
12788  
94 8406  
Fig. 4 - Reverse Light Current vs. Reverse Voltage  
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement  
80  
E = 0  
f = 1 MHz  
60  
40  
20  
0
0.1  
1
10  
100  
948407  
VR - Reverse Voltage (V)  
Fig. 5 - Diode Capacitance vs. Reverse Voltage  
Document Number: 84679  
Rev. 1.4, 12-May-09  
For technical questions, contact: detectortechsupport@vishay.com  
www.vishay.com  
445  
TEMD5010X01  
Silicon PIN Photodiode  
Vishay Semiconductors  
PACKAGE DIMENSIONS in millimeters  
Drawing-No.: 6.541-5060.01-4  
Not indicated tolerances 0.1  
Issue: 3; 05.02.08  
20536  
www.vishay.com  
446  
For technical questions, contact: detectortechsupport@vishay.com  
Document Number: 84679  
Rev. 1.4, 12-May-09  
TEMD5010X01  
Silicon PIN Photodiode  
Vishay Semiconductors  
TAPING DIMENSIONS in millimeters  
20537  
REEL DIMENSIONS in millimeters  
20874  
Document Number: 84679  
Rev. 1.4, 12-May-09  
For technical questions, contact: detectortechsupport@vishay.com  
www.vishay.com  
447  
TEMD5010X01  
Silicon PIN Photodiode  
Vishay Semiconductors  
SOLDER PROFILE  
DRYPACK  
300  
Devices are packed in moisture barrier bags (MBB) to  
max. 260 °C  
245 °C  
prevent the products from moisture absorption during  
transportation and storage. Each bag contains a desiccant.  
255 °C  
250  
240 °C  
217 °C  
200  
FLOOR LIFE  
max. 30 s  
Time between soldering and removing from MBB must not  
exceed the time indicated in J-STD-020:  
Moisture sensitivity: level 4  
150  
max. 100 s  
max. 120 s  
100  
Floor life: 72 h  
Conditions: Tamb < 30 °C, RH < 60 %  
50  
0
max. ramp down 6 °C/s  
max. ramp up 3 °C/s  
DRYING  
0
50  
100  
150  
200  
250  
300  
In case of moisture absorption devices should be baked  
before soldering. Conditions see J-STD-020 or  
recommended conditions:  
192 h at 40 °C (+ 5 °C), RH < 5 %  
or  
19841  
Time (s)  
Fig. 8 - Lead (Pb)-free Reflow Solder Profile  
acc. J-STD-020D  
96 h at 60 °C (+ 5 °C), RH < 5 %.  
www.vishay.com  
448  
For technical questions, contact: detectortechsupport@vishay.com  
Document Number: 84679  
Rev. 1.4, 12-May-09  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

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