TEPT4400 [VISHAY]

Ambient Light Sensor; 环境光传感器
TEPT4400
型号: TEPT4400
厂家: VISHAY    VISHAY
描述:

Ambient Light Sensor
环境光传感器

传感器
文件: 总6页 (文件大小:122K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TEPT4400  
Vishay Semiconductors  
Ambient Light Sensor  
Description  
TEPT4400, photo transistor for ambient light sensor  
application, plays a key role in power savings strate-  
gies by controlling LCD display intensity and keypad  
backlighting of mobile devices and in industrial on/off-  
lighting operation. It is sensitive to visible light much  
like the human eye and has peak sensitivity at 570 nm  
TEPT4400 is packaged in a T 1" package.  
.
94 8396  
Features  
Applications  
• High sensivity, I  
= 200 µA (E = 100 lx)  
Ambient light sensor for control of display backlight  
dimming in LCD displays and keypad backlighting of  
mobile devices and in industrial on/off-lighting opera-  
tion.  
PCE  
V
• Adapted to human eye responsivity  
• Wide angle of half sensitivity ϕ = 30°  
• T 1" package (3 mm)  
• Lead (Pb)-free component in accordance with  
RoHS 2002/95/EC and WEEE 2002/96/EC  
e4  
Replacement of CdS Photoresistors.  
Absolute Maximum Ratings  
Tamb = 25 °C unless otherwise specified  
Parameter  
Test condition  
Symbol  
VCEO  
Value  
6
Unit  
V
Collector Emitter Voltage  
Emitter Collector Voltage  
Collector current  
VECO  
IC  
1.5  
20  
V
mA  
mW  
°C  
Total Power Dissipation  
Junction Temperature  
Tamb 55 °C  
Ptot  
Tj  
100  
100  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Tamb  
Tstg  
Tsd  
- 40 to + 85  
- 40 to + 100  
260  
°C  
°C  
t < 3 s  
°C  
Thermal Resistance Junction/  
Ambient  
RthJA  
350  
K/W  
Document Number 81341  
Rev. 1.1, 03-Jul-06  
www.vishay.com  
1
TEPT4400  
Vishay Semiconductors  
Basic Characteristics  
Tamb = 25 °C unless otherwise specified  
Parameter  
Test condition  
IC = 0.1 mA  
Symbol  
VCEO  
Min  
6
Typ.  
Max  
Unit  
V
Collector Emitter Breakdown  
Voltage  
Collector dark current  
VCE = 5 V, E = 0  
CE = 0 V, f = 1 MHz, E = 0  
ICEO  
CCEO  
IPCE  
3
50  
70  
nA  
pF  
µA  
Collector-emitter capacitance  
Collector Light Current  
V
16  
40  
Ev = 20 lx, CIE illuminant A,  
VCE = 5 V  
15  
Ev = 100 lx, CIE illuminant A,  
VCE = 5 V  
IPCE  
200  
µA  
Angle of Half Sensitivity  
ϕ
30  
deg  
nm  
Wavelength of Peak Sensitivity  
λp  
570  
Range of Spectral Bandwidth  
λ0.1  
360 to 970  
0.1  
nm  
V
Collector Emitter Saturation  
Voltage  
Ev = 20 lx, standard light A,  
IPCE = 1.2 µA  
VCEsat  
Typical Characteristics  
Tamb = 25 °C unless otherwise specified  
400  
350  
300  
250  
200  
150  
100  
50  
-6  
10  
VCE = 5 V  
200 lx  
-7  
10  
-8  
10  
-9  
10  
100 lx  
-10  
10  
-11  
10  
50 lx  
20 lx  
-12  
10  
-13  
10  
0
-40 - 20  
0
20  
40  
60  
80  
100  
0
1
2
3
4
5
VCE - Collector Emitter Voltage (V)  
20210  
19758  
T
amb  
- Ambient Temperature (°C)  
Figure 1. Collector Dark Current vs. Ambient Temperature  
Figure 3. Photo Current vs. Collector Emitter Voltage  
10000  
2.2  
VCE = 5 V  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
1000  
100  
10  
VCE = 5 V, T = 2856 K  
0.2  
0.0  
10  
100  
1000  
- 40 - 20  
0
20  
40 60  
80 100  
20149  
E
- Illuminance (Ix)  
v
19759  
T
amb  
- Ambient Temperature (°C)  
Figure 2. Relative Photo Current vs. Ambient Temperature  
Figure 4. Photo Current vs. Illuminance  
www.vishay.com  
2
Document Number 81341  
Rev. 1.1, 03-Jul-06  
TEPT4400  
Vishay Semiconductors  
0°  
10°  
20°  
25  
30°  
40°  
f = 1 MHz  
20  
15  
10  
5
1.0  
0.9  
50°  
60°  
0.8  
70°  
0.7  
80°  
0
0.1  
1.0  
VCE - Collector Emitter Voltage(V)  
10.0  
0.6  
0.6 0.4 0.2  
0
0.2  
0.4  
20159  
19762  
Figure 5. Collector Emitter Capacitance vs.  
Collector Emitter Voltage  
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
300 400 500 600 700 800 900 1000 1100  
20019  
λ - Wavelength (nm)  
Figure 6. Relative Spectral Sensitivity vs. Wavelength  
Document Number 81341  
Rev. 1.1, 03-Jul-06  
www.vishay.com  
3
TEPT4400  
Vishay Semiconductors  
Package Dimensions in mm  
96 12190  
www.vishay.com  
4
Document Number 81341  
Rev. 1.1, 03-Jul-06  
TEPT4400  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Document Number 81341  
Rev. 1.1, 03-Jul-06  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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